HAT2071R Silicon N Channel Power MOS FET Power Switching REJ03G1178-0400 (Previous: ADE-208-1227B) Rev.4.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 16 mΩ typ (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 5 6 7 8 D D D D 65 87 1, 2, 3 4 5, 6, 7, 8 4 G 12 34 S S S 1 2 3 Rev.4.00 Sep 07, 2005 page 1 of 6 Source Gate Drain HAT2071R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value 30 Unit V VGSS ID ±20 10 V A 80 10 A A Gate to source voltage Drain current Note 1 Drain peak current Body-drain diode reverse drain current ID (pulse) IDR Channel dissipation Channel to ambient thermal impedance Pch Note 2 θ ch-a 2.5 50 W °C/W Tch Tstg 150 –55 to +150 °C °C Note 2 Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS 30 ±20 — — — — V V ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 IGSS IDSS — — — — ±10 1 µA µA VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) 1.0 — — 16 2.5 20 V mΩ VDS = 10 V, ID = 1 mA Note 3 ID = 5 A, VGS = 10 V Forward transfer admittance RDS (on) |yfs| — 10 25 16 36 — mΩ S ID = 5 A, VGS = 4.5 V Note 3 ID = 5 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 740 200 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 110 12 — — pF nC VDS = 10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 2.3 2.2 — — nC nC Turn-on delay time Rise time td (on) tr — — 13 15 — — ns ns Turn-off delay time Fall time td (off) tf — — 40 7 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.85 40 1.10 — V ns Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Note: 3. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 6 Test Conditions Note 3 VDD = 10 V VGS = 10 V ID = 10 A VGS = 10 V, ID = 5 A VDD ≅ 10 V RL = 2 Ω Rg = 4.7 Ω IF = 10 A, VGS = 0 IF = 10 A, VGS = 0 diF/dt = 50 A/µs Note 3 HAT2071R Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 500 3.0 100 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Drain Current Channel Dissipation Pch (W) 4.0 2.0 1.0 10 10 0µ µs PW s 1m Op = 10 s era ms tio n( PW 1 Operation in N ≤ 1 ote 4 this area is 0s ) limited by RDS (on) 0.1 10 DC Ta = 25°C 1 shot Pulse 0 0 50 100 Ambient Temperature 0.01 0.1 200 150 0.3 1 3 10 30 Drain to Source Voltage Ta (°C) 100 VDS (V) Note 4: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 20 10 V 5V 4V Pulse Test 16 ID 3V VDS = 10 V Pulse Test (A) 16 3.5 V 12 12 8 VGS = 2.5 V 4 Drain Current Drain Current ID (A) 20 8 25°C Tc = 75°C 4 –25°C 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.4 0.3 0.2 ID = 10 A 0.1 5A 2A 0 0 4 8 12 Gate to Source Voltage Rev.4.00 Sep 07, 2005 page 3 of 6 16 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.5 1 100 50 VGS = 4.5 V 20 10 V 10 5 2 Pulse Test 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) HAT2071R 50 Pulse Test 40 10 A 30 VGS = 4.5 V ID = 2 A, 5 A 20 10 2 A, 5 A, 10 A 10 V 0 –40 0 40 80 Case Temperature 120 Tc 160 100 30 Tc = –25°C 10 75°C 3 25°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 30 100 10000 Capacitance C (pF) 50 20 1 2 5 10 Ciss 300 Coss 100 Crss VGS = 0 f = 1 MHz 0 20 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics VGS 12 30 VDS VDD = 25 V 10 V 5V 20 10 8 4 VDD = 25 V 10 V 5V 0 0 4 8 Gate Charge Rev.4.00 Sep 07, 2005 page 4 of 6 12 16 Qg (nc) 20 200 Switching Time t (ns) 16 40 VGS (V) Reverse Drain Current IDR (A) ID = 10 A 0 1000 10 0.5 20 50 3000 30 di / dt = 50 A / µs VGS = 0, Ta = 25°C Gate to Source Voltage Reverse Recovery Time trr (ns) 10 Typical Capacitance vs. Drain to Source Voltage 100 10 0.1 0.2 VDS (V) 3 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 1 100 td(off) 50 20 tr td(on) 10 tf 5 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 2 0.1 0.2 0.5 1 2 Drain Current 5 ID (A) 10 20 HAT2071R Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 10 V 16 5V 12 VGS = 0 8 4 Pulse Test 0 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.1 0.01 0.2 0.1 0.05 θch – f (t) = γ s (t) • θch – f θch – f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.02 0.01 0.001 1s h p ot uls e D= PDM PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Switching Time Waveform Switching Time Test Circuit 90% Vout Monitor Vin Monitor D.U.T. Rg Vin Vout Vin 10 V VDS = 10 V 10% 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 5 of 6 10% RL tr 90% td(off) tf HAT2071R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name Quantity Shipping Container HAT2071R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0