CED3423/CEU3423 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit -30 Units V VGS ±20 V ID -18 A IDM -72 A 31 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 0.25 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 4 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Rev 3. 2010.Apr http://www.cetsemi.com Details are subject to change without notice . 1 CED3423/CEU3423 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -24V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = -250µA -3 V 37 45 mΩ VGS = -4.5V, ID = -5A 62 80 mΩ VDS = -15V, ID = -10A 4.5 S 640 pF 135 pF 95 pF VGS = -10V, ID = -10A -1 d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 11 22 ns 5 10 ns 30 60 ns Turn-Off Fall Time tf 7 14 ns Total Gate Charge Qg 12.5 16 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -15V, ID = -10A, VGS = -10V 2 nC 2.4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -10A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 -10 A -1.3 V CED3423/CEU3423 25 -VGS=10,8,6V 40 -ID, Drain Current (A) -ID, Drain Current (A) 50 30 20 10 0 -VGS=3V 0 2 4 6 8 25 C 0 1 2 3 4 5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 450 300 Coss 150 Crss 0 5 10 15 20 25 2.2 1.9 ID=-10A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage -55 C -VGS, Gate-to-Source Voltage (V) Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C 5 0 600 1.2 10 -VDS, Drain-to-Source Voltage (V) 750 1.3 5 15 10 900 0 20 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 V =-15V DS ID=-10A 8 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CED3423/CEU3423 6 4 2 0 0 4 8 12 RDS(ON)Limit 10ms 100ms 10 1 10 0 10 16 2 1s DC TC=25 C TJ=150 C Single Pulse -1 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -2 t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 2