ON MC74LVX574DWR2G Octal d-type flip-flop with 3-state output Datasheet

MC74LVX574
Octal D-Type Flip-Flop
with 3-State Outputs
The MC74LVX574 is an advanced high speed CMOS octal
flip−flop with 3−state outputs. The inputs tolerate voltages up to 7.0 V,
allowing the interface of 5.0 V systems to 3.0 V systems.
This 8−bit D−type flip−flop is controlled by a clock pulse input and
an output enable input. When the output enable input is high, the eight
outputs are in a high impedance state.
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Features
•
•
•
•
•
•
•
•
•
High Speed: tPD = 8.5 ns (Typ) at VCC = 3.3 V
Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
These Devices are Pb−Free and are RoHS Compliant
D0
D1
D2
D3
2
C
Q
D
19
3
C
Q
D
18
4
C
Q
D
17
5
C
Q
D
16
SOIC−20
DW SUFFIX
CASE 751D
PIN ASSIGNMENT
VCC O0
O1
O2
O3
O4
O5
O6
O7
CP
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
OE
D0
D1
D2
D3
D4
D5
D6
D7 GND
20−Lead (Top View)
Q0
MARKING DIAGRAMS
Q1
20
20
D5
D6
D7
6
C
Q
D
15
7
C
Q
D
14
8
C
Q
D
13
C
Q
D
9
CP
OE
LVX
574
ALYWG
G
LVX574
AWLYYWWG
Q2
1
1
Q3
SOIC−20
D4
TSSOP−20
DT SUFFIX
CASE 948E
LVX574
A
WL, L
Y
WW, W
G or G
Q4
Q5
TSSOP−20
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Q6
ORDERING INFORMATION
12
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Q7
11
1
Figure 1. Logic Diagram
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 4
1
Publication Order Number:
MC74LVX574/D
MC74LVX574
PIN NAMES
Pins
Function
OE
CP
D0−D7
O0−O7
Output Enable Input
Clock Pulse Input
Data Inputs
3−State Latch Outputs
FUNCTION TABLE
INPUTS
OE
L
L
L
H
OUTPUT
CP
D
Q
L, H,
X
H
L
X
X
H
L
No Change
Z
MAXIMUM RATINGS
Symbol
Value
Unit
VCC
DC Supply Voltage
Parameter
–0.5 to +7.0
V
Vin
DC Input Voltage
–0.5 to +7.0
V
Vout
DC Output Voltage
–0.5 to VCC +0.5
V
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current
±20
mA
Iout
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
PD
Power Dissipation
180
mW
Tstg
Storage Temperature
–65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
3.6
V
Vin
DC Input Voltage
0
5.5
V
Vout
DC Output Voltage
0
VCC
V
−40
+85
_C
0
100
ns/V
TA
Dt/DV
Operating Temperature, All Package Types
Input Rise and Fall Time
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
MC74LVX574
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
TA = 25°C
VCC
V
Min
1.5
2.0
2.4
VIH
High−Level Input Voltage
2.0
3.0
3.6
VIL
Low−Level Input Voltage
2.0
3.0
3.6
VOH
High−Level Output Voltage
(Vin = VIH or VIL)
IOH = −50 mA
IOH = −50 mA
IOH = −4 mA
2.0
3.0
3.0
VOL
Low−Level Output Voltage
(Vin = VIH or VIL)
IOL = 50 mA
IOL = 50 mA
IOL = 4 mA
2.0
3.0
3.0
Iin
Input Leakage Current
Vin = 5.5 V or GND
IOZ
Maximum 3−State Leakage Current
ICC
Quiescent Supply Current
Typ
TA = −40 to 85°C
Max
Min
0.5
0.8
0.8
1.9
2.9
2.58
Max
1.5
2.0
2.4
2.0
3.0
0.0
0.0
Unit
V
0.5
0.8
0.8
1.9
2.9
2.48
V
V
0.1
0.1
0.36
0.1
0.1
0.44
V
3.6
±0.1
±1.0
mA
Vin = VIL or VIH
Vout = VCC or GND
3.6
±0.2
5
±2.5
mA
Vin = VCC or GND
3.6
4.0
40.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
fmax
tPLH,
tPHL
tPZL,
tPZH
tPLZ,
tPHZ
tOSHL
tOSLH
Parameter
Maximum Clock Frequency
(50% Duty Cycle)
Propagation Delay
CP to O
Output Enable Time
OE to O
Output Disable Time
OE to O
Output−to−Output Skew
(Note 1)
TA = −40 to 85°C
Min
Typ
VCC = 2.7 V
CL = 15 pF
CL = 50 pF
60
45
115
60
50
40
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
80
50
125
75
65
45
VCC = 2.7 V
CL = 15 pF
CL = 50 pF
9.2
11.5
14.5
18.0
1.0
1.0
17.5
21.0
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
8.5
11.0
13.2
16.7
1.0
1.0
15.5
19.0
VCC = 2.7 V
RL = 1 kW
CL = 15 pF
CL = 50 pF
9.8
11.4
15.0
18.5
1.0
1.0
18.5
22.0
VCC = 3.3 ± 0.3 V
RL = 1 kW
CL = 15 pF
CL = 50 pF
8.2
10.7
12.8
16.3
1.0
1.0
15.0
18.5
VCC = 2.7 V
RL = 1 kW
CL = 50 pF
12.1
19.1
1.0
22.0
VCC = 3.3 ± 0.3 V
RL = 1 kW
CL = 50 pF
11.0
15.0
1.0
17.0
VCC = 2.7 V
VCC = 3.3 ± 0.3 V
CL = 50 pF
CL = 50 pF
Test Conditions
Max
1.5
1.5
Min
Max
Unit
ns
1.5
1.5
ns
ns
ns
ns
1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter
guaranteed by design.
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3
MC74LVX574
CAPACITIVE CHARACTERISTICS
TA = 25°C
Symbol
Min
Parameter
TA = −40 to 85°C
Typ
Max
10
Min
Max
Unit
10
pF
Cin
Input Capacitance
4
Cout
Maximum Three−State Output Capacitance
6
pF
CPD
Power Dissipation Capacitance (Note 2)
28
pF
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per latch). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 3.3V, Measured in SOIC Package)
TA = 25°C
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.5
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.5
−0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
2.0
V
VILD
Maximum Low Level Dynamic Input Voltage
0.8
V
Symbol
Characteristic
TIMING REQUIREMENTS (Input tr = tf = 3.0ns)
TA = 25°C
Limit
Limit
Unit
Minimum Pulse Width, CP
VCC = 2.7 V
VCC = 3.3 ± 0.3 V
6.5
5.0
7.5
5.0
ns
tsu
Minimum Setup Time, D to CP
VCC = 2.7 V
VCC = 3.3 ± 0.3 V
5.0
3.5
5.0
3.5
ns
th
Minimum Hold Time, D to CP
VCC = 2.7 V
VCC = 3.3 ± 0.3 V
1.5
1.5
1.5
1.5
ns
Symbol
tw(h)
Parameter
Typ
TA = −40 to 85°C
Test Conditions
SWITCHING WAVEFORMS
VCC
CP
50%
GND
tw
1/fmax
tPLH
Q
tPHL
50% VCC
Figure 2.
VCC
OE
50%
VOL +0.3V
GND
tPZL
O
50% VCC
tPZH
O
tPLZ
VALID
VCC
HIGH
VOL -0.3V
IMPEDANCE
D
50%
GND
tsu
tPHZ
50% VCC
CP
th
VCC
50%
GND
HIGH
IMPEDANCE
Figure 3.
Figure 4.
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4
MC74LVX574
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
1 kW
CL*
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
*Includes all probe and jig capacitance
*Includes all probe and jig capacitance
Figure 5. Propagation Delay Test Circuit
Figure 6. Three−State Test Circuit
ORDERING INFORMATION
Package
Shipping†
MC74LVX574DWR2G
SOIC−20
(Pb−Free)
1000 Tape & Reel
MC74LVX574DTG
TSSOP−20
(Pb−Free)
75 Units / Rail
MC74LVX574DTR2G
TSSOP−20
(Pb−Free)
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MC74LVX574
PACKAGE DIMENSIONS
TSSOP−20
CASE 948E−02
ISSUE C
20X
0.15 (0.006) T U
2X
K REF
0.10 (0.004)
S
L/2
20
M
T U
S
V
K
K1
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
S
J J1
11
B
L
SECTION N−N
−U−
PIN 1
IDENT
0.25 (0.010)
N
1
10
M
0.15 (0.006) T U
S
N
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION:
MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH OR GATE BURRS
SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
F
DETAIL E
−W−
C
G
D
H
DETAIL E
0.100 (0.004)
−T− SEATING
PLANE
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
--1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
--0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
MC74LVX574
PACKAGE DIMENSIONS
SOIC−20
CASE 751D−05
ISSUE G
20
11
X 45 _
h
H
M
E
0.25
10X
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
q
A
B
M
D
1
10
20X
B
B
0.25
M
T A
S
B
S
L
A
18X
e
A1
DIM
A
A1
B
C
D
E
e
H
h
L
q
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0_
7_
SEATING
PLANE
C
T
ON Semiconductor and the
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MC74LVX574/D
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