APTGF20X60RTP2 APTGF20X60BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module VCES = 600V IC = 20A @ Tc = 80°C Application • AC Motor control Features Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Very low stray inductance High level of integration Internal thermistor for temperature monitoring • • • • APTGF20X60RTP2: Without Brake (Pin 7 & 14 not connected) 20 19 Benefits • • • • • • • • 14 13 12 11 10 18 17 16 15 21 22 9 8 23 7 24 1 2 3 4 5 Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 6 All ratings @ Tj = 25°C unless otherwise specified IFSM Parameter Repetitive Peak Reverse Voltage DC Forward Current Surge Forward Current tp = 10ms TC = 80°C Tj = 25°C Max ratings 1600 20 300 Tj = 150°C 230 Unit V July, 2003 Symbol VRRM ID A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-4 APTGF20X60BTP2 – Rev 0 1. Absolute maximum ratings Diode rectifier Absolute maximum ratings APTGF20X60RTP2 APTGF20X60BTP2 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD IF Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation DC Forward Current IGBT & Diode Inverter Symbol VCES IC ICM VGE PD SCSOA IF IFSM TC = 25°C TC = 80°C TC = 25°C TC = 25°C TC = 80°C Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Short circuit Safe Operating Area DC Forward Current Surge Forward Current 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol Characteristic IR Reverse Current VF Forward Voltage RthJC Junction to Case tp = 1ms TC = 25°C Tj = 125°C TC = 80°C TC = 80°C Test Conditions VR = 1600V Tj = 150°C Tj = 25°C IF = 30A Tj = 150°C IF = 20A ICES VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Cies Input Capacitance VF Forward Voltage RthJC Junction to Case Max ratings 600 35 20 70 ±20 125 80A @ 360V 20 40 Unit V Min Typ 2 1.3 1 Max A V W A A V W A Unit mA °C/W Typ Max Unit Tj = 25°C 0.5 500 µA Tj = 125°C 0.8 Tj = 25°C VGE = 15V IC = 10A Tj = 125°C VGE = VCE , IC = 0.35 mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Tj = 25°C VGE = 0V IF = 20A Tj = 125°C IGBT Diode 1.95 2.2 5.5 Test Conditions Zero Gate Voltage Collector Current Unit V 1.5 1.05 1 IGBT Brake & Diode (only for APTGF20X60BTP2) Electrical Characteristics Symbol Characteristic Max ratings 600 20 10 25 ±20 80 10 VGE = 0V VCE = 600V APT website – http://www.advancedpower.com Min 4.5 mA 2.35 6.5 300 800 1.25 1.2 V V V nA pF 1.75 1.5 1.5 July, 2003 Symbol VCES V °C/W 2-4 APTGF20X60BTP2 – Rev 0 IGBT & Diode Brake (only for APTGF20X60BTP2) Absolute maximum ratings APTGF20X60RTP2 APTGF20X60BTP2 IGBT & Diode Inverter Electrical Characteristics Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Input Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy VF Forward Voltage Qrr Reverse Recovery Charge RthJC VGE = 0V IF = 20A IF = 20A VR = 300V di/dt=700A/µs Min Typ Max 0.7 1.0 1.95 2.2 5.5 500 600 4.5 RT = R25 exp B25 / 50 1 1 − T25 T V nA ns 30 Tj = 25°C Tj = 125°C Tj = 25°C 1.7 Tj = 125°C 2.7 Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K V pF 50 50 250 50 50 270 40 0.7 1.25 1.2 Temperature sensor NTC 6.5 300 1100 IGBT Diode Junction to Case 2.45 Unit V µA mA ns mJ 1.7 V µC 1 1.5 °C/W Min Typ 5 3375 Max Unit kΩ K Min Typ Max Unit T: Thermistor temperature RT: Thermistor value at T 3. Thermal and package characteristics Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature To Heatsink Torque Mounting torque Wt Package Weight 2500 M5 APT website – http://www.advancedpower.com -40 -40 -40 V 150 125 125 3.3 185 July, 2003 ICES Test Conditions VGE = 0V, IC = 500µA VGE = 0V Tj = 25°C VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 20A Tj = 125°C VGE = VCE , IC = 0.5 mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 20A RG = 47Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 20A RG = 47Ω °C N.m g 3-4 APTGF20X60BTP2 – Rev 0 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage APTGF20X60RTP2 APTGF20X60BTP2 4. Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 4-4 APTGF20X60BTP2 – Rev 0 July, 2003 PIN 24