PROCESS CP304V Small Signal Transistor NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 5.7 x 3.9 MILS Emitter Bonding Pad Area 5.3 x 3.9 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 23,048 PRINCIPAL DEVICE TYPES MPSA05 MPSA06 R0 (30-August 2011) w w w. c e n t r a l s e m i . c o m PROCESS CP304V Typical Electrical Characteristics R0 (30-August 2011) w w w. c e n t r a l s e m i . c o m