APT12045L2VFR
1200V 28A 0.450Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• TO-264 MAX
TO-264
Max
D
FREDFET
G
S
MAXIMUM RATINGS
Symbol
VDSS
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT12045L2VFR
UNIT
1200
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
833
Watts
Linear Derating Factor
6.67
W/°C
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
112
TL
EAS
28
-55 to 150
°C
300
Amps
28
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance
2
TYP
MAX
1200
(VGS = 10V, ID= 14A)
UNIT
Volts
0.450
Ohms
Zero Gate Voltage Drain Current (VDS = 1200, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
4-2004
BVDSS
Characteristic / Test Conditions
050-5844 Rev A
Symbol
DYNAMIC CHARACTERISTICS
APT12045L2VFR
Characteristic
Symbol
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
11370
Coss
Output Capacitance
VDS = 25V
950
Crss
Reverse Transfer Capacitance
f = 1 MHz
495
VGS = 10V
605
VDD = 600V
ID = 28A @ 25°C
42
310
Turn-on Delay Time
VGS = 15V
16
Rise Time
VDD = 600V
15
ID = 28A @ 25°C
85
RG = 0.6Ω
14
Qg
Total Gate Charge
3
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
t d(on)
tr
t d(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
28
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
Peak Diode Recovery
dt
dv/
MAX
UNIT
Amps
(Body Diode)
112
(VGS = 0V, IS = -ID 28A)
1.3
Volts
18
V/ns
dt
5
t rr
Reverse Recovery Time
(IS = -ID 28A, di/dt = 100A/µs)
Tj = 25°C
310
Tj = 125°C
625
Q rr
Reverse Recovery Charge
(IS = -ID 28A, di/dt = 100A/µs)
Tj = 25°C
2
Tj = 125°C
6
IRRM
Peak Recovery Current
(IS = -ID 28A, di/dt = 100A/µs)
Tj = 25°C
14
Tj = 125°C
24
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.15
40
UNIT
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 8.16mH, R = 25Ω, Peak I = 28A
temperature.
j
G
L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
5 I ≤ I [Cont.], di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 200V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
0.14
0.9
0.12
0.7
0.10
0.08
0.5
Note:
0.06
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5844 Rev A
4-2004
0.16
0.3
0.04
t2
0.02
0
t1
Duty Factor D = t1/t2
0.1
0.05
10-5
10-4
SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
0.0367
Power
(watts)
0.0923
0.0215
0.0627F
0.761F
50.8F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
50
TJ = -55°C
40
TJ = +25°C
30
TJ = +125°C
20
10
0
1
2
3
4
5
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
25
20
15
10
5
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
25
30
20
4.5V
10
4V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
V
1.3
NORMALIZED TO
= 10V @ I = 14A
GS
D
1.2
VGS=10V
1.1
1.0
VGS=20V
0.09
0.08
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
V
2.0
D
1.00
0.95
0.90
0.85
-50
1.2
= 14A
GS
= 10V
1.5
1.0
0.5
0.0
-50
1.05
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
1.1
1.0
0.9
0.8
4-2004
I
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
5V
40
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
30
0
5.5
50
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5844 Rev A
ID, DRAIN CURRENT (AMPERES)
80
0
VGS =15V, 10V, 8V & 6V
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
70
APT12045L2VFR
60
APT12045L2VFR
Typical Performance Curves
50,000
OPERATION HERE
LIMITED BY RDS (ON)
100µS
50
10
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
112
1mS
5
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 28A
10
VDS=240V
8
VDS=600V
6
VDS=960V
4
2
0
Coss
500
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
12
D
1,000
100
1
5 10
50 100
500 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
5,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
Ciss
10,000
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
Drain
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
050-5844 Rev A
4-2004
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.