APT26F120B2 APT26F120L 1200V, 27A, 0.58Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® TO-264 APT26F120B2 APT26F120L D Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 27 Continuous Drain Current @ TC = 100°C 16 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 2165 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 14 A 1 105 Thermal and Mechanical Characteristics Min Characteristic Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 1135 RθJC Junction to Case Thermal Resistance 0.11 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG °C/W Operating and Storage Junction Temperature Range -55 150 °C TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque 0.11 300 0.22 oz 6.2 g 10 in·lbf 1.1 N·m Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 050-8143 Rev C 5-2009 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ΔVBR(DSS)/ΔTJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ΔVGS(th)/ΔTJ Min 1200 VGS = 10V, ID = 14A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 1200V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 1.41 0.48 4 -10 0.58 5 TJ = 25°C VGS = 0V 250 1000 ±100 TJ = 125°C VGS = ±30V Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA APT26F120B2_L Min Test Conditions VDS = 50V, ID = 14A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 31 9670 115 715 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 275 VGS = 0V, VDS = 0V to 800V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 140 300 50 140 50 31 170 48 VGS = 0 to 10V, ID = 14A, VDS = 600V Resistive Switching VDD = 800V, ID = 14A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) A 105 S 1.1 335 640 TJ = 25°C TJ = 125°C TJ = 25°C VDD = 100V TJ = 125°C diSD/dt = 100A/µs TJ = 25°C Unit 27 G ISD = 14A, TJ = 25°C, VGS = 0V ISD = 14A 3 Max TJ = 125°C ISD ≤ 14A, di/dt ≤1000A/µs, VDD = 800V, TJ = 125°C 1.72 4.67 11 16 V ns µC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 22.09mH, RG = 25Ω, IAS = 14A. 050-8143 Rev C 5-2009 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -4.40E-7/VDS^2 + 5.34E-8/VDS + 7.59E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT26F120B2_L 70 25 V GS = 10V T = 125°C J V 50 40 30 TJ = 25°C 20 10 0 15 5V 10 5 4.5V TJ = 125°C TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 2, Output Characteristics NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. VGS = 10V @ 14A 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 2.5 80 2.0 1.5 1.0 0.5 60 TJ = -55°C TJ = 25°C 40 TJ = 125°C 20 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 40 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 10,000 35 Ciss TJ = -55°C 30 C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 100 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 TJ = 25°C 25 TJ = 125°C 20 15 10 1000 Coss 100 Crss 5 0 = 6, 7, 8 & 9V GS 20 TJ = -55°C ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) 60 10 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 16 0 200 400 600 800 1000 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 16 100 12 VDS = 240V 10 VDS = 600V 8 6 VDS = 960V 4 2 0 90 80 70 60 50 TJ = 25°C 40 TJ = 150°C 30 20 10 0 0 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 050-8143 Rev C 5-2009 14 ISD, REVERSE DRAIN CURRENT (A) VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 14A 200 200 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) APT26F120B2_L 10 13µs 100µs 1ms 1 Rds(on) 0.1 Rds(on) 10 13µs 100µs 1ms TJ = 150°C TC = 25°C 1 DC line 0.1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 10ms Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25°C)*(TJ - TC)/125 C DC line 100ms TJ = 125°C TC = 75°C 1 10ms IDM 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.10 D = 0.9 0.08 0.7 0.06 0.5 Note: 0.04 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.12 0.3 t1 t2 SINGLE PULSE 0.02 t1 = Pulse Duration t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration T-MAX® (B2) Package Outline 1.0 TO-264 (L) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 050-8143 Rev C 5-2009 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Gate Drain Source Source 2.21 (.087) 2.59 (.102) 2.29 (.090) 2.69 (.106) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.