JIEJIE MICROELECTRONICS CO. , Ltd JCT1690 Series 90A SCRs Rev.2.0 DESCRIPTION: JCT1690 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. 1 2 3 TO-247S MAIN FEATURES Symbol Value Unit IT(RMS) 90 A IGT 10-80 mA VDRM/ VRRM 1600 V A(2) K(1) G(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage VDRM 1600 V Repetitive peak reverse voltage VRRM 1600 V Average on-state current (TC=80℃) IT(AV) 56 A IT(RMS) 90 A ITSM 1250 A I2t 7800 A2s dI/dt 150 A/μs Peak gate current IGM 10 A Peak gate power PGM 20 W PG(AV) 2 W Storage junction temperature range Operating junction temperature range RMS on-state current(TC=80℃) Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Average gate power dissipation(Tj=125℃) TEL：+86-513-83639777 - 1 / 4- http://www.jjwdz.com JCT1690 Series JieJie Microelectronics CO. , Ltd ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol IGT VGT VGD Test Condition Unit MIN. TYP. MAX. 10 - 80 mA - - 1.5 V 0.25 - - V VD=12V RL=30Ω VD=VDRM Tj=125℃ IL IG=1.2 IGT - - 200 mA IH IT=1A - - 150 mA 1000 - - V/μs Value(MAX) Unit TC=25℃ 1.8 V TC=25℃ 50 μA TC=125℃ 10 mA Value Unit 0.27 ℃/W dV/dt VD=2/3VDRM Tj=125℃ Gate Open STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM=110A tp=380μs VD=VDRM VR=VRRM THERMAL RESISTANCES Symbol Rth(j-c) Parameter junction to case(DC) ORDERING INFORMATION J CT 16 90 CS JieJie Microelectronics Co.,Ltd CS:TO-247S SCRs 16:VDRM/VRRM≥1600V TEL：+86-513-83639777 - 2 / 4- IT(RMS):90A http://www.jjwdz.com JCT1690 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions A H Ref. Millimeters Min. D B P J K G C E F L TO-247S A 15.1 Inches Typ. Typ. Max. Min. Max. 16.1 0.594 0.634 B 19.8 20.8 0.78 0.819 C 13.8 14.8 0.543 0.583 D 3.00 4.00 0.118 0.157 E 2.75 3.35 0.108 0.132 F 1.30 1.50 0.051 0.059 G 5.10 5.80 0.201 0.228 H 4.50 5.50 0.177 0.217 J 1.45 2.15 0.057 0.085 K 1.90 2.80 0.075 0.110 L 0.55 0.80 0.022 0.031 P 2.00 2.40 0.079 0.094 FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 120 P(w) 160 α=180° 100 120 80 60 80 40 40 20 0 0 IT(RMS) (A) 40 60 20 80 0 0 100 FIG.3: Surge peak on-state current versus number of cycles Tc (℃) 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 1000 1400 tp=10ms One cycle 1200 1000 Tj=125℃ 800 100 600 400 Tj=25℃ 200 0 1 10 Number of cycles 100 TEL：+86-513-83639777 1000 10 0 - 3 / 4- 1 2 VTM (V) 3 4 5 http://www.jjwdz.com JCT1690 Series JieJie Microelectronics CO. , Ltd FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature 2 2 2 ITSM (A), I t (A s) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 3.0 10000 I2 t 2.5 ITSM 2.0 dI/dt 1.5 1000 IGT IH&IL 1.0 0.5 100 0.01 tp(ms) 0.1 1 10 0.0 -40 Tj(℃) -20 0 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the second version which is made in 20-Nov.-2014. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 4 / 4- http://www.jjwdz.com