Vishay BZM55C3V9 Silicon epitaxial planar z-diode Datasheet

BZM55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
Saving space
D
D
D
D
D
Very sharp reverse characteristic
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55C... / TZMC...
96 12315
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
RthJA 300K/W
Type
x
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35mm copper clad, 0.9 mm2 copper area per electrode
Symbol
RthJA
RthJL
Value
500
300
Unit
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Document Number 85598
Rev. 3, 01-Apr-99
Test Conditions
IF=200mA
Type
Symbol
VF
Min
Typ
Max
1.5
Unit
V
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BZM55C...
Vishay Telefunken
Type
BZM55C...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
VZnom IZT for VZT and rzjT
V
mA
V 1)
W
2.4
5
2.28 to 2.56 < 85
2.7
5
2.5 to 2.9
< 85
3.0
5
2.8 to 3.2
< 90
3.3
5
3.1 to 3.5
< 90
3.6
5
3.4 to 3.8
< 90
3.9
5
3.7 to 4.1
< 90
4.3
5
4.0 to 4.6
< 90
4.7
5
4.4 to 5.0
< 80
5.1
5
4.8 to 5.4
< 60
5.6
5
5.2 to 6.0
< 40
6.2
5
5.8 to 6.6
< 10
6.8
5
6.4 to 7.2
<8
7.5
5
7.0 to 7.9
<7
8.2
5
7.7 to 8.7
<7
9.1
5
8.5 to 9.6
< 10
10
5
9.4 to 10.6
< 15
11
5
10.4 to 11.6 < 20
12
5
11.4 to 12.7 < 20
13
5
12.4 to 14.1 < 26
15
5
13.8 to 15.6 < 30
16
5
15.3 to 17.1 < 40
18
5
16.8 to 19.1 < 50
20
5
18.8 to 21.2 < 55
22
5
20.8 to 23.3 < 55
24
5
22.8 to 25.6 < 80
27
5
25.1 to 28.9 < 80
30
5
28 to 32
< 80
33
5
31 to 35
< 80
36
5
34 to 38
< 80
39
2.5
37 to 41
< 90
43
2.5
40 to 46
< 90
47
2.5
44 to 50
< 110
51
2.5
48 to 54
< 125
56
2.5
52 to 60
< 135
62
2.5
58 to 66
< 150
68
2.5
64 to 72
< 200
75
2.5
70 to 79
< 250
rzjk at
W
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
IZK IR and IR at VR
mA
mA mA 2) V
1
< 100 < 50
1
1
< 10
< 50
1
1
<4
< 40
1
1
<2
< 40
1
1
<2
< 40
1
1
<2
< 40
1
1
<1
< 20
1
1
< 0.5
< 10
1
1
< 0.1
<2
1
1
< 0.1
<2
1
1
< 0.1
<2
2
1
< 0.1
<2
3
1
< 0.1
<2
5
1
< 0.1
<2
6.2
1
< 0.1
<2
6.8
1
< 0.1
<2
7.5
1
< 0.1
<2
8.2
1
< 0.1
<2
9.1
1
< 0.1
<2
10
1
< 0.1
<2
11
1
< 0.1
<2
12
1
< 0.1
<2
13
1
< 0.1
<2
15
1
< 0.1
<2
16
1
< 0.1
<2
18
1
< 0.1
<2
20
1
< 0.1
<2
22
1
< 0.1
<2
24
1
< 0.1
<2
27
1
< 0.1
<5
30
0.5 < 0.1
<5
33
0.5 < 0.1
<5
36
0.5 < 0.1
< 10
39
0.5 < 0.1
< 10
43
0.5 < 0.1
< 10
47
0.5 < 0.1
< 10
51
0.5 < 0.1
< 10
56
TKVZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
x 100ms, tighter tolerances available on request.
1) t /T
p
2) at T =
j
150°C
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Document Number 85598
Rev. 3, 01-Apr-99
BZM55C...
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
1.3
VZtn=VZt/VZ(25°C)
VZtn – Relative Voltage Change
Ptot – Total Power Dissipation ( mW )
600
500
400
300
200
100
1.2
80
120
160
100
IZ=5mA
10
DVZ
– Voltage Change ( mV )
Tj = 25°C
1
95 9598
10
15
20
10–4/K
10–4/K
10–4/K
0.8
–60
0
60
120
180
240
Tj – Junction Temperature ( °C )
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
1000
5
4
2
–4
95 9599
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
10–4/K
10–4/K
0.9
200
Tamb – Ambient Temperature ( °C )
95 9602
8
6
0
–2 10–4/K
1.0
25
VZ – Z-Voltage ( V )
15
10
5
IZ=5mA
0
–5
0
10
20
30
40
50
VZ – Z-Voltage ( V )
95 9600
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
C D – Diode Capacitance ( pF )
Figure 2. Typical Change of Working Voltage
under Operating Conditions at Tamb=25°C
TK VZ – Temperature Coefficient of VZ ( 10 –4 /K )
40
10–4/K
1.1
0
0
TKVZ=10
150
VR = 2V
Tj = 25°C
100
50
0
0
95 9601
5
10
15
20
25
VZ – Z-Voltage ( V )
Figure 5. Diode Capacitance vs. Z–Voltage
Document Number 85598
Rev. 3, 01-Apr-99
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BZM55C...
100
50
10
40
IZ – Z-Current ( mA )
IF – Forward Current ( mA )
Vishay Telefunken
Tj = 25°C
1
0.1
Ptot=500mW
Tamb=25°C
30
20
10
0.01
0
0.001
0
0.2
0.4
0.6
0.8
1.0
15
VF – Forward Voltage ( V )
95 9605
20
25
35
30
VZ – Z-Voltage ( V )
95 9607
Figure 8. Z–Current vs. Z–Voltage
Figure 6. Forward Current vs. Forward Voltage
1000
r Z – Differential Z-Resistance ( W )
100
IZ – Z-Current ( mA )
80
Ptot=500mW
Tamb=25°C
60
40
20
IZ=1mA
100
5mA
10 10mA
Tj = 25°C
1
0
0
0
4
8
12
16
20
VZ – Z-Voltage ( V )
95 9604
5
10
15
20
25
VZ – Z-Voltage ( V )
95 9606
Figure 9. Differential Z–Resistance vs. Z–Voltage
Z thp – Thermal Resistance for Pulse Cond. (K/W)
Figure 7. Z–Current vs. Z–Voltage
1000
tp/T=0.5
100
tp/T=0.2
Single Pulse
RthJA=300K/W
DT=Tjmax–Tamb
10
tp/T=0.01
tp/T=0.1
tp/T=0.02
iZM=(–VZ+(VZ2+4rzj
tp/T=0.05
1
10–1
100
101
DT/Zthp)1/2)/(2rzj)
102
tp – Pulse Length ( ms )
95 9603
Figure 10. Thermal Response
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Document Number 85598
Rev. 3, 01-Apr-99
BZM55C...
Vishay Telefunken
0.71
1.3
Reflow Soldering
1.27
95 10330
1.2
0.152
9.9
0.6
0.355
25
1.2
0.6
2.4
Figure 12. Recommended foot pads (in mm)
Wave Soldering
10
95 10331
2.5
95 10329
1.4
24
0.7
1.4
0.7
2.8
Figure 11. Board for RthJA definition (in mm)
Figure 13. Recommended foot pads (in mm)
Dimensions in mm
96 12072
Document Number 85598
Rev. 3, 01-Apr-99
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BZM55C...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85598
Rev. 3, 01-Apr-99
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