ON MUN5211T1 Npn silicon bias resistor transistor Datasheet

MUN5211T1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−70/SOT−323 package which is designed for low power
surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel.
• Pb−Free Packages are Available
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTORS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
Rating
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction−to−Ambient
RqJA
618 (Note 1)
403 (Note 2)
= Specific Device Code
= (See Marking Table)
= Date Code
°C/W
ORDERING INFORMATION
RqJL
280 (Note 1)
332 (Note 2)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
November, 2004 − Rev. 6
8x
x
M
mW/°C
Thermal Resistance −
Junction−to−Lead
 Semiconductor Components Industries, LLC, 2004
8x M
SC−70/SOT−323
CASE 419
STYLE 3
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MUN5211T1/D
MUN5211T1 Series
DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping †
MUN5211T1
SC−70/SOT−323
8A
10
10
3000 / Tape & Reel
MUN5211T1G
SC−70/SOT−323
(Pb−Free)
8A
10
10
3000 / Tape & Reel
MUN5212T1
SC−70/SOT−323
8B
22
22
3000 / Tape & Reel
MUN5212T1G
SC−70/SOT−323
(Pb−Free)
8B
22
22
3000 / Tape & Reel
MUN5213T1
SC−70/SOT−323
8C
47
47
3000 / Tape & Reel
MUN5213T1G
SC−70/SOT−323
(Pb−Free)
8C
47
47
3000 / Tape & Reel
MUN5214T1
SC−70/SOT−323
8D
10
47
3000 / Tape & Reel
MUN5214T1G
SC−70/SOT−323
(Pb−Free)
8D
10
47
3000 / Tape & Reel
MUN5215T1 (Note 3)
SC−70/SOT−323
8E
10
∞
3000 / Tape & Reel
MUN5215T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
8E
10
∞
3000 / Tape & Reel
MUN5216T1 (Note 3)
SC−70/SOT−323
8F
4.7
∞
3000 / Tape & Reel
MUN5216T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
8F
4.7
∞
3000 / Tape & Reel
MUN5230T1 (Note 3)
SC−70/SOT−323
8G
1.0
1.0
3000 / Tape & Reel
MUN5231T1 (Note 3)
SC−70/SOT−323
8H
2.2
2.2
3000 / Tape & Reel
MUN5231T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
8H
2.2
2.2
3000 / Tape & Reel
MUN5232T1 (Note 3)
SC−70/SOT−323
8J
4.7
4.7
3000 / Tape & Reel
MUN5232T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
8J
4.7
4.7
3000 / Tape & Reel
MUN5233T1 (Note 3)
SC−70/SOT−323
8K
4.7
47
3000 / Tape & Reel
MUN5233T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
8K
4.7
47
3000 / Tape & Reel
MUN5234T1 (Note 3)
SC−70/SOT−323
8L
22
47
3000 / Tape & Reel
MUN5235T1 (Note 3)
SC−70/SOT−323
8M
2.2
47
3000 / Tape & Reel
MUN5235T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
8M
2.2
47
3000 / Tape & Reel
MUN5236T1 (Note 3)
SC−70/SOT−323
8N
100
100
3000 / Tape & Reel
MUN5237T1 (Note 3)
SC−70/SOT−323
8P
47
22
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
http://onsemi.com
2
MUN5211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Characteristic
OFF CHARACTERISTICS
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5236T1
MUN5237T1
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5236T1
MUN5237T1
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
MUN5230T1/MUN5231T1
(IC = 10 mA, IB = 1 mA)
MUN5215T1/MUN5216T1/
MUN5232T1/MUN5233T1/MUN5234T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V,
(VCC = 5.0 V,
(VCC = 5.0 V,
VB = 3.5 V, RL = 1.0 kW)
VB = 5.5 V, RL = 1.0 kW)
VB = 4.0 V, RL = 1.0 kW)
VOL
MUN5211T1
MUN5212T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5213T1
MUN5236T1
MUN5237T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://onsemi.com
3
Vdc
Vdc
MUN5211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MUN5230T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN5215T1
MUN5216T1
MUN5233T1
Input Resistor
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5236T1
MUN5237T1
Resistor Ratio
MUN5211T1/MUN5212T1/MUN5213T1/
MUN5236T1
MUN5214T1
MUN5215T1/MUN5216T1
MUN5230T1/MUN5231T1/MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5237T1
R1/R2
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
RqJA = 403°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
4
150
MUN5211T1 Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5211T1
TA=−25°C
25°C
0.1
75°C
0
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
0.01
0.001
VCE = 10 V
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
TA=−25°C
10
1
0.1
0.01
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
VO = 5 V
0
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob, CAPACITANCE (pF)
4
3
100
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
50
10
MUN5211T1 Series
1000
1
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5212T1
IC/IB = 10
25°C
TA=−25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
50
VCE = 10 V
1
10
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
75°C
25°C
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
2
0
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
3
100
IC, COLLECTOR CURRENT (mA)
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://onsemi.com
6
MUN5211T1 Series
10
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5213T1
1
25°C
TA=−25°C
75°C
0.1
0.01
0
TA=75°C
25°C
−25°C
100
10
50
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
1
Figure 12. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
TA=−25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
Figure 14. Output Capacitance
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
Figure 13. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage versus Output Current
http://onsemi.com
7
MUN5211T1 Series
1
300
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5214T1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
200
−25°C
150
100
50
0
80
TA=75°C
VCE = 10
250
1
2
4
6
Figure 17. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
−25°C
10
VO = 5 V
1
50
Figure 19. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
Figure 20. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
http://onsemi.com
8
10
MUN5211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 23. Open Collector Inverter:
Inverts the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
http://onsemi.com
9
MUN5211T1 Series
PACKAGE DIMENSIONS
SC−70/SOT−323
CASE 419−04
ISSUE L
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
S
1
2
DIM
A
B
C
D
G
H
J
K
L
N
S
D
G
0.05 (0.002)
J
N
C
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.00
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
2.00
2.40
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
K
H
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.032
0.040
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.079
0.095
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
10
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MUN5211T1/D
Similar pages