MOSFET SMD Type N-Channel MOSFET NDT70N03 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 ● VDS (V) = 30V +0.15 1.50 -0.15 ■ Features Unit: mm +0.1 2.30 -0.1 +0.8 0.50 -0.7 2.3 G +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max 0.60-+ 0.1 0.1 +0.25 2.65 -0.1 +0.2 9.70 -0.2 D ● RDS(ON) ＜ 6.5mΩ (VGS = 4.5V) +0.28 1.50 -0.1 ● RDS(ON) ＜ 4.3mΩ (VGS = 10V) +0.15 0.50 -0.15 3 .8 0 ● ID = 33A (VGS = 10V) +0.15 4 .60 -0.15 1 Gate 2 Drain 3 Source S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current (Note.1) Ta=25℃ Tc=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range ID IDM Tc=25℃ Ta=70℃ t ≤ 10 sec Steady State PD RthJA Unit V 33 A 70 100 88 W 8.3 18 50 ℃/W RthJC 1.5 TJ 150 Tstg -55 to 150 ℃ Note.1: Surface Mounted on FR4 Board, t ≤ 10 sec. www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET NDT70N03 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS , ID=250μA Gate Threshold Voltage Min ID=250μA, VGS=0V RDS(On) VDS=30V, VGS=0V, TJ=125℃ 50 VGS=10V, ID=20A Forward Transconductance 1 ±100 nA 3 V 3.5 4.3 5.1 6.5 7 TJ=125℃ mΩ VGS=10V, VDS=5V 50 A gFS VDS=15V, ID=20A 20 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg 5100 VGS=0V, VDS=25V, f=1MHz (Note.1) pF 860 430 VGS=0V, VDS=0V, f=1MHz (Note.1) VGS=10V, VDS=15V, ID=50A (Note.1) 0.5 1 1.5 90 135 Qgs Qgd 16 Turn-On DelayTime td(on) 12 20 12 20 40 60 10 15 Turn-On Rise Time tr Turn-Off DelayTime td(off) VGS=10V, VDS=15V, RL=0.3Ω, RG=2.5Ω,ID=50A (Note.1) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Maximum Body-Diode Continuous Current IS 8.3 Pulsed Current ISM 100 Diode Forward Voltage VSD IF= 50A, dI/dt= 100A/μs IS=100A,VGS=0V 40 1.2 Ω nC 18 Gate Source Charge Gate Drain Charge www.kexin.com.cn μA ID(ON) Note.1: Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%. 2 Unit V 1 VGS=4.5V, ID=20A On State Drain Current Max VDS=30V, VGS=0V VGS=10V, ID=20A Static Drain-Source On-Resistance Typ 30 Drain-Source Breakdown Voltage ns 80 1.5 A V MOSFET SMD Type N-Channel MOSFET NDT70N03 ■ Typical Characterisitics Output Characteristics 200 Transfer Characteristics 200 V GS = 10 thru 5 V 160 I D − Drain Current (A) I D − Drain Current (A) 150 4 V 120 80 100 T C = 125 C 50 25 C 40 3 V −55 C 0 0 0 2 4 6 8 0 10 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 180 0.010 0.008 25 C RDS(on) − On-Resistance ( GFS − Transconductance (S) T C = −55 C 150 120 125 C 90 60 0.006 V GS = 4.5 V 0.004 V GS = 10 V 0.002 30 0 0.000 0 20 40 60 80 100 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 100 80 100 Gate Charge 10 6000 C iss 4000 2000 C oss C rss 80 ID − Drain Current (A) Capacitance 8000 60 0 8 VDS = 15 V ID = 50 A 6 4 2 0 0 6 12 18 24 VDS − Drain-to-Source Voltage (V) 30 0 20 40 60 Qg − Total Gate Charge (nC) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET NDT70N03 ■ Typical Characterisitics On-Resistance vs. Junction Temperature 1.8 Source-Drain Diode Forward Voltage 100 1.4 I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 1.6 VGS = 10 V ID = 20 A 1.2 1.0 T J = 150 C T J = 25 C 10 0.8 0.6 −50 1 −25 0 25 50 75 100 125 150 175 0.3 0 TJ − Junction Temperature ( C ) Maximum Avalanche and Drain Current vs. Ambient Temperature 40 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) Safe Operating Area 1000 Limited by rDS(on) 10 s 100 s 100 I D − Drain Current (A) I D − Drain Current (A) 32 24 16 8 10 1 ms 10 ms 100 ms 1 1 s 10 s 100 s DC Single Pulse T A = 25 C 0.1 . 0 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature ( C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 −4 10 −3 10 −2 10 −1 1 Square Wave Pulse Duration (sec) 4 www.kexin.com.cn 10 100 1000 MOSFET SMD Type N-Channel MOSFET NDT70N03 ■ Typical Characterisitics Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 −4 10 −3 10 −2 10 −1 1 10 100 Square Wave Pulse Duration (sec) www.kexin.com.cn 5