IGP30N60T IGW30N60T TrenchStop® Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop® and Fieldstop technology for 600 V applications offers : PG-TO-220-3-1 - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ G PG-TO-247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code IGP30N60T 600V 30A 1.5V 175°C G30T60 PG-TO-220-3-1 IGW30N60T 600V 30A 1.5V 175°C G30T60 PG-TO-247-3 Type E Package Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value 600 Unit V A TC = 25°C 60 TC = 100°C 30 Pulsed collector current, tp limited by Tjmax ICpuls 90 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 90 Gate-emitter voltage VGE ±20 V tSC 5 µs Power dissipation TC = 25°C Ptot 187 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time 2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.6 Nov. 09 IGP30N60T IGW30N60T TrenchStop® Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.80 K/W Characteristic IGBT thermal resistance, RthJC junction – case Thermal resistance, RthJA junction – ambient PG-TO-220-3-1 62 PG-TO-247-3-21 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j = 25°C - 1.5 2.05 T j = 175 °C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =0.2mA Collector-emitter saturation voltage VCE(sat) V V G E = 15 V, I C =30A Gate-emitter threshold voltage VGE(th) I C =0 .43mA, V C E =V G E Zero gate voltage collector current ICES V C E = 60 0 V , VGE=0V µA T j = 25°C - - 40 T j = 175 °C - - 1000 Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA Transconductance gfs V C E =20V, I C =30A - 16.7 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss V C E =25V, - 1630 - Output capacitance Coss VGE=0V, - 108 - Reverse transfer capacitance Crss f=1MHz - 50 - Gate charge QGate V C C = 48 0 V, I C =30A - 167 - nC PG- TO- 220- 3-1 - 7 - nH PG- TO- 247- 3-21 - 13 - V G E =15V,t S C ≤5 µs V C C = 400 V, T j = 1 50° C - 275 - pF V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case 1) Short circuit collector current 1) IC(SC) A Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.6 Nov. 09 IGP30N60T IGW30N60T TrenchStop® Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 23 - - 21 - - 254 - - 46 - - 0.69 - - 0.77 - - 1.46 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25°C , V C C = 40 0 V,I C =30A, V G E = 0 /1 5 V, R G = 1 0 .6 Ω , L σ 1 ) =1 36nH, C σ 1 ) =39pF Energy losses include “tail” and diode reverse recovery. 2) ns mJ Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. - 24 - - 26 - - 292 - - 90 - - 1.0 - - 1.1 - - 2.1 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) 2) T j = 175 °C , V C C = 40 0 V,I C =30A, V G E = 0 /1 5 V, R G = 1 0 .6 Ω L σ 1 ) =1 36nH, C σ 1 ) =39pF Energy losses include “tail” and diode reverse recovery.2) ns mJ Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Includes Reverse Recovery Losses from IKW30N60T due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.6 Nov. 09 IGP30N60T IGW30N60T TrenchStop® Series 100A tp=2µs 90A 10µs 70A 60A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A T C =80°C 50A T C =110°C 40A 30A Ic 20A 1kH z 10kH z 1ms 10ms DC 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) 50A IC, COLLECTOR CURRENT 160W 120W 80W Ptot, POWER DISSIPATION 1A 0.1A 1V 100kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 10Ω) 40W 0W 25°C 50µs Ic 10A 0A 100H z 10A 40A 30A 20A 10A 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.6 Nov. 09 IGP30N60T IGW30N60T TrenchStop® Series 80A 50A 60A V G E =20V V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 15V 50A 13V 11V 40A 9V 30A 7V 20A 40A 15V 13V 30A 11V 20A 7V 9V 10A 10A 0A 0A 0V 1V 2V 3V 0V IC, COLLECTOR CURRENT 50A 40A 30A 20A T J = 1 7 5 °C 10A 2 5 °C 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 1V 2.5V IC =60A 2.0V IC =30A 1.5V IC =15A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.6 Nov. 09 IGP30N60T IGW30N60T TrenchStop® Series t d(off) tf 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) t d(on) 10ns tf 100ns t d(on) tr tr 1ns 0A 10A 20A 10ns 30A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 10Ω, Dynamic test circuit in Figure E) 10Ω 20Ω 30Ω 40Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf t d(on) tr 10ns 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG=10Ω, Dynamic test circuit in Figure E) Power Semiconductors VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.43mA) 6 Rev. 2.6 Nov. 09 TrenchStop® Series *) Eon and Ets include losses due to diode recovery *) E on an d E ts in c lud e lo s se s Ets* du e to d io d e re co v ery 4.0mJ 3.0mJ 2.0mJ Eoff 1.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 5.0mJ Eon* 0A 10A 20A 40A 50A E off 2.0 m J 1.0 m J 0Ω Eoff Eon* 75°C 40Ω 2.5m J 2.0m J E ts * 1.5m J E off 1.0m J E on * 0.5m J 0.0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG = 10Ω, Dynamic test circuit in Figure E) Power Semiconductors 30Ω due to diode recovery 3.0m J E, SWITCHING ENERGY LOSSES 1.5mJ 50°C 20Ω *) E on and E ts include losses Ets* 0.0mJ 25°C 10Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery 2.0mJ E, SWITCHING ENERGY LOSSES 3.0 m J 0.0 m J 30A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 10Ω, Dynamic test circuit in Figure E) 0.5mJ E ts * E on * 0.0mJ 1.0mJ IGP30N60T IGW30N60T 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 30A, RG = 10Ω, Dynamic test circuit in Figure E) 7 Rev. 2.6 Nov. 09 TrenchStop® Series IGP30N60T IGW30N60T C iss VGE, GATE-EMITTER VOLTAGE 1nF c, CAPACITANCE 15V 120V 480V 10V C oss 100pF 5V C rss 0V 0nC 30nC 60nC 0V 90nC 120nC 150nC 180n C QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 400A 300A 200A 100A 0A 12V tSC, IC(sc), short circuit COLLECTOR CURRENT 12µs 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.6 Nov. 09 ZthJC, TRANSIENT THERMAL RESISTANCE TrenchStop® Series IGP30N60T IGW30N60T D=0.5 0.2 -1 10 K/W 0.1 R,(K/W) 0.29566 0.25779 0.19382 0.05279 0.05 0.02 -2 10 K/W 0.01 R1 τ, (s) -2 6.478*10 -3 6.12*10 -4 4.679*10 -5 6.45*10 R2 C1=τ1/R1 C2=τ2/R2 single pulse 1µs 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 Rev. 2.6 Nov. 09 TrenchStop® Series IGP30N60T IGW30N60T PG-TO-220-3-1 Power Semiconductors 10 Rev. 2.6 Nov. 09 TrenchStop® Series Power Semiconductors 11 IGP30N60T IGW30N60T Rev. 2.6 Nov. 09 IGP30N60T IGW30N60T TrenchStop® Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 12 Rev. 2.6 Nov. 09 TrenchStop® Series IGP30N60T IGW30N60T Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.6 Nov. 09