ISC MBR2060 Schottky barrier rectifier Datasheet

INCHANGE Semiconductor
MBR2060
Schottky Barrier Rectifier
FEATURES
·Metal of silicon rectifier, majonty carrier conduction
·Guard ring for transient protection
·Low power loss high efficiency
·High Surge Capability,High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MAXIMUN RATINGS
·Operating Temperature: -55C to +150C
·Storage Temperature: -55C to +150C
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
60
V
RMS Reverse Voltag
42
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 135℃
20
A
IFSM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60Hz)
150
A
Junction Temperature
-55~150
℃
Storage Temperature Range
-55~150
℃
VRRM
VRWM
VR
VR(RMS)
TJ
Tstg
PARAMETER
isc website：www.iscsemi.com
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INCHANGE Semiconductor
MBR2060
Schottky Barrier Rectifier
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
MAX
UNIT
2.0
℃/W
MAX
UNIT
IF= 20A ; TC= 25℃
0.75
V
Rated DC Voltage, TC= 25℃
0.1
5.0
mA
Thermal Resistance,Junction to Case
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
VF
Maximum Instantaneous Forward Voltage
IR
Maximum Instantaneous Reverse Current
isc website：www.iscsemi.com
CONDITIONS
Rated DC Voltage, TC= 125℃
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isc & iscsemi is registered trademark