FDS6982AS tmM ® ™ Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • Applications • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.6A, 30V RDS(on) max= 13.5mΩ @ VGS = 10V RDS(on) max= 16.5mΩ @ VGS = 4.5V • Low gate charge (21nC typical) • Q1: Optimized for low switching losses 6.3A, 30V RDS(on) max= 28.0mΩ @ VGS = 10V RDS(on) max= 35.0mΩ @ VGS = 4.5V Low gate charge (11nC typical) • Notebook D1 D1 4 5 D2 Q1 6 D2 3 2 7 SO-8 S2 G2 S1 G1 Absolute Maximum Ratings Symbol Drain-Source Voltage Gate-Source Voltage ID Drain Current PD 8 - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Q2 (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG 1 TA = 25°C unless otherwise noted Parameter VDSS VGSS Q2 Operating and Storage Junction Temperature Range Q1 Units 30 30 ±20 8.6 30 ±20 6.3 20 V V 2 1.6 A W 1 0.9 –55 to +150 °C 78 40 °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking FDS6982AS ©2008 Fairchild Semiconductor Corporation Device FDS6982AS Reel Size 13” Tape width 12mm Quantity 2500 units FDS6982AS Rev B1 FDS6982AS May 2008 TA = 25°C unless otherwise noted Symbol Test Conditions Parameter Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics VGS = 0 V, ID = 1 mA ID = 250 uA VGS = 0 V, ID = 1 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, VDS = VGS, ID = 1 mA ID = 250 µA Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 30 Q2 Q1 1 1 V 28 24 mV/°C 500 1 ±100 µA 3 3 V nA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient RDS(on) Static Drain-Source On-Resistance Q2 –3.1 ID = 250 uA, Referenced to 25°C Q1 –4.3 VGS = 10 V, ID = 8.6 A VGS = 10 V, ID = 8.6 A, TJ = 125°C VGS = 4.5 V, ID = 7.5 A VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 6.3 A, TJ = 125°C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V Q2 11 16 13 20 26 25 ID = 1 mA, Referenced to 25°C ID(on) On-State Drain Current gFS Forward Transconductance 1.4 1.9 VDS = 5 V, VDS = 5 V, ID = 8.6 A ID = 6.3 A VDS = 10 V, f = 1.0 MHz VGS = 0 V, Q1 Q2 Q1 Q2 Q1 30 20 mV/°C 13.5 20.0 16.5 28 33 35 mΩ A 32 19 S Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 1250 610 410 180 130 85 1.4 2.2 pF Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 9 10 6 7 27 24 11 3 12 12 13 14 19 15 10 5 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VGS = 15mV, f = 1.0 MHz pF pF Ω (Note 2) VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω VDD = 15 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Ω 18 20 12 14 44 39 20 6 22 22 23 25 34 27 20 10 ns ns ns ns ns ns ns ns FDS6982AS Rev B1 FDS6982AS Electrical Characteristics Symbol Parameter Switching Characteristics Qg(TOT) Qg Qgs Qgd TA = 25°C unless otherwise noted (continued) Test Conditions Type Min Typ Max Units (Note 2) Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V Q2: VDS = 15 V, ID = 11.5A Q1: VDS = 15 V, ID = 6.3A Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Gate–Source Charge Gate–Drain Charge 21 11 12 6 3.1 1.8 3.6 2.4 30 15 16 9 nC nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current Trr Reverse Recovery Time Qrr Reverse Recovery Charge Trr Reverse Recovery Time Qrr Reverse Recovery Charge VSD Drain-Source Diode Forward Voltage IF = 11.5 A, diF/dt = 300 A/µs Q2 Q1 Q2 (Note 3) IF = 6.3 A, diF/dt = 100 A/µs (Note 2) (Note 2) (Note 2) A 19 ns 12 nC ns Q1 20 Q2 Q2 Q1 9 0.5 0.6 0.8 (Note 3) VGS = 0 V, IS = 3 A VGS = 0 V, IS = 6 A VGS = 0 V, IS = 1.3 A 3.0 1.3 nC 0.7 1.0 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. 4 5 FDS6982AS Rev B1 FDS6982AS Electrical Characteristics FDS6982AS Typical Characteristics: Q2 30 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 2.6 3.0V VGS = 10V 3.5V 4.5V 20 10 2.5V 2.2 2 1.8 1.6 0 3.5V 4.0V 1.2 4.5V 1 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 Figure 1. On-Region Characteristics. 6.0V 10V 10 20 ID, DRAIN CURRENT (A) 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.05 ID = 8.6A VGS = 10V ID = 4.3 A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 1.4 0.8 0 1.2 1 0.8 0.6 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 0.04 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 0 125 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 30 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25 ID, DRAIN CURRENT (A) VGS = 2.5V 2.4 20 15 o TA = 125 C -55oC 10 5 25oC 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 1 o TA = 125 C o 25 C -55oC 0.1 0.01 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6982AS Rev B1 FDS6982AS Typical Characteristics: Q2 2000 8 1600 VDS = 10V 20V 6 15V 4 1200 Ciss 800 Coss 2 400 0 0 Crss 0 5 10 15 Qg, GATE CHARGE (nC) 20 25 0 Figure 7. Gate Charge Characteristics. 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 100µs 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 135oC/W 0.1 o TA = 25 C 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V ID = 8.6A CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 135°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 SINGLE PULSE 0.001 0.0001 0.001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6982AS Rev B1 FDS6982AS Typical Characteristics Q1 VGS = 10V 4.0V 2.6 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 20 16 6.0V 12 4.5V 8 3.0V 4 0 1 VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 3.5V 1.4 4.0V 4.5V 6.0V 1 0 2 Figure 12. On-Region Characteristics. 1.6 10V 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 ID = 6.3A VGS = 10V ID = 3.15 A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 0.6 0 1.4 1.2 1 0.8 0.08 0.06 o TA = 125 C 0.04 0.02 TA = 25oC 0 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 2 150 Figure 14. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 100 20 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) VGS = 3.0V 15 10 o TA = 125 C o -55 C 5 25oC VGS = 0V 10 o TA = 125 C 1 25oC 0.1 o -55 C 0.01 0.001 0.0001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6982AS Rev B1 FDS6982AS Typical Characteristics Q1 800 f = 1MHz VGS = 0 V ID = 6.3A 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = 10V 6 20V 15V 4 600 Ciss 400 Coss 200 2 Crss 0 0 0 3 6 Qg, GATE CHARGE (nC) 9 0 12 Figure 18. Gate Charge Characteristics. 10 15 20 Figure 19. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 100µs 10 1ms 10ms 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE o RθJA = 135 C/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 20. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 t1, TIME (sec) 10 100 1000 Figure 21. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 135°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 0.001 0.0001 t1 0.01 SINGLE PULSE 0.001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6982AS Rev B1 FDS6982AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) Current: 1.6A/DIV Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 23 shows the reverse recovery characteristic of the FDS6982AS. TA = 125oC 0.01 0.001 TA = 100oC 0.0001 0.00001 TA = 25oC 0.000001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 25. SyncFET body diode reverse leakage versus drain-source voltage and temperature Time: 10nS/DIV Figure 23. FDS6982AS SyncFET body diode reverse recovery characteristic. Current: 1.6A/DIV For comparison purposes, Figure 24 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6982). Time: 10nS/DIV Figure 24. Non-SyncFET (FDS6982) body diode reverse recovery characteristic. FDS6982AS Rev B1 FDS6982AS Typical Characteristics L VDS tP VGS RGE + DUT VGS - 0V tp vary tP to obtain required peak IAS BVDSS VDS IAS VDD VDD IAS 0.01Ω tAV Figure 26. Unclamped Inductive Load Test Circuit Figure 27. Unclamped Inductive Waveforms Drain Current Same type as + 50kΩ 10V - 10µF 1µF + VDD VGS - QG(TOT) 10V DUT QGD QGS VGS Ig(REF Charge, (nC) Figure 28. Gate Charge Test Circuit Figure 29. Gate Charge Waveform tON VDS VGS RGEN td(ON) RL VDS + VDD DUT VGSPulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 30. Switching Time Test Circuit - 10% 0V 90% 10% 90% VGS 0V tr 90% tOFF td(OFF tf ) 50% 10% 50% Pulse Width Figure 31. Switching Time Waveforms FDS6982AS Rev B1 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDS6982AS Rev.B1