Green DMTH10H010LPS 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features BVDSS RDS(ON) Max ID TC = +25°C 100V 8.6mΩ @ VGS = 10V 98.4A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Mechanical Data Applications Rated to +175C – Ideal for High Ambient Temperature Environments Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability ® Motor Control DC-DC Converters Power Management Case: PowerDI 5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 D S D S D S D G D Pin1 G S Top View Bottom View Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number DMTH10H010LPS-13 Notes: Case PowerDI5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information D D D D = Manufacturer’s Marking TH1010LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17= 2017) WW = Week Code (01 to 53) TH1010LS YY WW S S S G PowerDI is a registered trademark of Diodes Incorporated. DMTH10H010LPS Document number: DS39907 Rev. 3 - 2 1 of 7 www.diodes.com August 2017 © Diodes Incorporated DMTH10H010LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (VGS = 10V) Steady State TA = +25°C TA = +100°C TC = +25°C TC = +100°C ID Unit V V A 98.4 69.6 250 95 250 15 33.7 ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH Value 100 ±20 10.8 7.6 IDM IS ISM IAS EAS A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Symbol PD RθJA PD RθJC TJ, TSTG Steady State TC = +25°C Value 1.5 99 125 1.2 -55 to +175 Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD 1.9 6.9 7.5 10 0.8 3 8.6 12 20 1.3 V Static Drain-Source On-Resistance 1.4 — — — — VDS = VGS, ID = 250µA VGS = 10V, ID = 13A VGS = 6V, ID = 13A VGS = 4.5V, ID = 5A VGS = 0V, IS = 13A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 2592 792 45 2 53.7 10.6 8.2 11.6 14.1 42.9 22 49.8 85.1 — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 50V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 13A, VGS = 10V ns VDD = 50V, VGS = 10V, ID = 13A, Rg = 6Ω ns nC IF = 13A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMTH10H010LPS Document number: DS39907 Rev. 3 - 2 2 of 7 www.diodes.com August 2017 © Diodes Incorporated DMTH10H010LPS 30.0 30 VDS= 5.0V VGS = 10.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS = 6.0V 20.0 VGS = 4.5V VGS = 4.0V 15.0 VGS = 3.5V 10.0 5.0 20 15 175℃ 10 5 VGS = 3.2V 85℃ 150℃ 25℃ 125℃ -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 3 1.5 14.00 12.00 VGS = 4.5V 10.00 8.00 VGS = 10.0V 6.00 4.00 25 20 15 ID = 13A 10 5 0 2 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.02 0.018 VGS=10V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 4.5 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) Figure 1.Typical Output Characteristic 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 175℃ 0.016 150℃ 0.014 0.012 125℃ 0.01 85℃ 0.008 0.006 25℃ 0.004 -55℃ 0.002 0 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.2 2 VGS = 10V, ID = 13A 1.8 1.6 1.4 1.2 VGS =4.5V, ID = 13A 1 0.8 0.6 0.4 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMTH10H010LPS Document number: DS39907 Rev. 3 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature August 2017 © Diodes Incorporated 0.025 0.02 VGS = 4.5V, ID = 13A 0.015 0.01 VGS = 10V, ID = 13A 0.005 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMTH10H010LPS 2.8 2.6 2.4 2.2 ID = 1mA 2 1.8 1.6 ID = 250μA 1.4 1.2 1 0.8 0.6 0 -50 -25 0 25 50 75 -50 -25 100 125 150 175 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 10000 30 f=1MHz IS, SOURCE CURRENT (A) 25 CT, JUNCTION CAPACITANCE (pF) VGS = 0V 20 15 10 5 TA = 175℃ TA = 85℃ TA = 150℃ TA = 25℃ TA = 125℃ TA = -55℃ Ciss Coss 1000 Crss 100 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) 0 1.5 5 50 Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 10 1000 8 100 RDS(ON) LIMITED ID, DRAIN CURRENT (A) VGS (V) 10 15 20 25 30 35 40 45 VDS, DRAIN-SOURCE VOLTAGE (V) 6 4 VDS = 50V, ID = 13A 0.1 0 0.01 5 10 15 20 25 30 35 40 45 50 55 Qg (nC) Figure 11. Gate Charge DMTH10H010LPS Document number: DS39907 Rev. 3 - 2 4 of 7 www.diodes.com PW =10μs PW =100μs PW =1ms 1 2 0 PW =1s 10 TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V 0.1 PW =10ms PW =100ms PW =1s 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 August 2017 © Diodes Incorporated DMTH10H010LPS 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t) = r(t) * RθJC RθJC= 1.14℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMTH10H010LPS Document number: DS39907 Rev. 3 - 2 5 of 7 www.diodes.com August 2017 © Diodes Incorporated DMTH10H010LPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 b3 (4X) M M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10º 12º 11º θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMTH10H010LPS Document number: DS39907 Rev. 3 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 August 2017 © Diodes Incorporated DMTH10H010LPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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