PD-20376B HFA40HF120 Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 1200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount VF = 3.1V Qrr = 510nC di(rec)M/dt = 350A/µs Description These Ultrafast,soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter VR IF(AV) IFSM PD @ TC = 25°C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 100°C Single Pulse Forward Current, TC = 25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 1200 11 190 83 -55 to +150 V A W °C Note: D.C. = 50% rect. wave 1/2 sine wave, 60 Hz , PW. = 8.33 ms CASE STYLE (ISOLATED BASE) CATHODE ANODE SMD-1 www.irf.com 1 04/27/15 HFA40HF120 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR VF IR CT LS Cathode Anode Breakdown Voltage Forward Voltage See Fig. 1 Max Reverse Leakage Current See Fig. 2 Junction Capacitance, See Fig. 3 Series Inductance Min. Typ. Max. Units 1200 — — — — — — — — — — — — — — — 28 5.9 — 3.2 3.1 4.0 2.7 10 1.0 42 — V V µA mA pF nH Test Conditions IR = 100µA IF = 11A TJ = -55°C IF = 11A IF = 22A IF = 11A, TJ = 125°C VR = VR Rated VR = 960V, TJ = 125°C VR = 200V Measured from center of cathode pad the center of anode pad Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M /dt1 di(rec)M /dt2 Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb Min. Typ. Max. Units — — — — — — — — Test Conditions 80 120 ns TJ = 25°C See Fig. 130 195 TJ = 125°C 5 IF = 11A 7.25 10.9 TJ = 25°C See Fig. A 10.2 15.3 TJ = 125°C 6 VR = 200V 340 510 TJ = 25°C See Fig. nC 825 1240 TJ = 125°C 7 dif/dt = 200A/µs 230 350 TJ = 25°C See Fig. A/µs 160 240 TJ = 125°C 8 Thermal - Mechanical Characteristics Parameter RthJC Wt 2 Junction-to-Case Weight Typ. Max. Units — 2.6 1.5 — °C/W g www.irf.com HFA40HF120 Reverse Current - IR (µA) 10000 1000 TJ = 150°C TJ = 125°C 100 10 1 0.1 TJ = 25°C 0.01 TJ = -55°C 0.001 0 300 600 900 1200 Reverse Voltage - VR (V) 10 Tj = 125°C Fig. 2 - Typical Reverse Current Vs. Reverse Voltage Tj = 25°C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 100 1000 Tj = -55°C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forward Voltage Drop - V F (V) A TJ = 25°C 100 10 1 Fig. 1 - Typical Forward Voltage Drop Vs. Instantaneous Forward Current 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 PDM 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA40HF120 100 250 I F = 22A I F = 11A 200 IF = 22A IF = 11A IF = 5.5A Irr- ( A) trr - (ns) I F = 5.5A 150 10 100 50 VR = 200V TJ = 125°C TJ = 25°C 0 100 VR = 200V TJ = 125°C TJ = 25°C dif /dt - (A/µs) 1 100 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt, di f /dt - (A/µs) 1000 Fig. 6 - Typical Recovery Current vs. dif/dt, 10000 10000 VR = 200V TJ = 125°C TJ = 25°C IF = 22A di(rec)M/dt - (A/µs) Q RR - (nC) IF = 11A I F = 5.5A 1000 1000 100 I F = 5.5A IF = 11A IF = 22A VR = 200V TJ = 125°C TJ = 25°C 100 100 di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt 4 10 100 di f /dt - (A/µs) 1000 Fig. 8 - Typical di(rec)M/dt vs. dif/dt www.irf.com HFA40HF120 3 trr IF REVERSE RECOVERY CIRCUIT tb ta 0 VR = 200V 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 0.01 Ω 0.75 I RRM L = 70µH 1 D.U.T. dif/dt ADJUST D G 5 IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 I RRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveformand Definitions Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS 1 = CATHODE 2 = ANODE 3=N/C IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2015 www.irf.com 5