Diodes SMD Type Silicon PIN Diode BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Very low capacitance +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 For frequencies up to 3 GHz 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym bol V a lu e U n it R e v e rs e v o lta g e P a ra m e te r VR 50 V F o rw a rd c u rre n t IF 100 mA P to t 250 mW T o ta l p o w e r d is s ip a tio n BAR63 TS 80 B A R 6 3 -0 4 ,-0 5 ,-0 6 TS 250 55 O p e ra tin g te m p e ra tu re ra n g e T op -5 5 to + 1 5 0 S to ra g e te m p e ra tu re ra n g e T s tg -5 5 to + 1 5 0 J u n c tio n - a m b ie n t 1) R th J A BAR63 B A R 6 3 -0 4 ,-0 5 ,-0 6 450 K /W 540 J u n c tio n - s o ld e rin g p o in t R th J S BAR63 B A R 6 3 -0 4 ,-0 5 ,-0 6 280 K /W 380 N o te 1 . P a c k a g e m o u n te d o n a lu m in a 1 5 m m 1 6 .7 m m 0 .7 m m www.kexin.com.cn 1 Diodes SMD Type BAR 63;BAR63-04 BAR 63-05;BAR63-06 Electrical Characteristics Ta = 25 Parameter Symbol Breakdown voltage Test Condition V (BR) Reverse leakage IR Forward voltage VF Diode capacitance CT Forward resistance rf Charge carrier life time ôS Series inductance LS IR = 5 A Max Unit 50 nA 50 V IF = 100 mA 0.95 V R = 0 , f = 100 MHz 0.3 V R = 5 V , f = 1 MHz 0.21 0.3 IF = 5 mA, f = 100 MHz 1.2 2 IF = 10 mA, f = 100 MHz 1 IF = 10 mA, IR = 6 mA,IR = 3 mA Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 www.kexin.com.cn Typ V R = 20 V Marking 2 Min 1.2 V pF pF 75 ns 1.4 nH