Kexin BAR63-06 Silicon pin diode Datasheet

Diodes
SMD Type
Silicon PIN Diode
BAR 63;BAR63-04
BAR 63-05;BAR63-06
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Low forward resistance
0.55
PIN diode for high speed switching of RF signals
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Very low capacitance
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
For frequencies up to 3 GHz
1.Base
2.Emitter
3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
S ym bol
V a lu e
U n it
R e v e rs e v o lta g e
P a ra m e te r
VR
50
V
F o rw a rd c u rre n t
IF
100
mA
P to t
250
mW
T o ta l p o w e r d is s ip a tio n
BAR63
TS
80
B A R 6 3 -0 4 ,-0 5 ,-0 6
TS
250
55
O p e ra tin g te m p e ra tu re ra n g e
T op
-5 5 to + 1 5 0
S to ra g e te m p e ra tu re ra n g e
T s tg
-5 5 to + 1 5 0
J u n c tio n - a m b ie n t
1)
R th J A
BAR63
B A R 6 3 -0 4 ,-0 5 ,-0 6
450
K /W
540
J u n c tio n - s o ld e rin g p o in t
R th J S
BAR63
B A R 6 3 -0 4 ,-0 5 ,-0 6
280
K /W
380
N o te
1 . P a c k a g e m o u n te d o n a lu m in a 1 5 m m
1 6 .7 m m
0 .7 m m
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1
Diodes
SMD Type
BAR 63;BAR63-04
BAR 63-05;BAR63-06
Electrical Characteristics Ta = 25
Parameter
Symbol
Breakdown voltage
Test Condition
V (BR)
Reverse leakage
IR
Forward voltage
VF
Diode capacitance
CT
Forward resistance
rf
Charge carrier life time
ôS
Series inductance
LS
IR = 5
A
Max
Unit
50
nA
50
V
IF = 100 mA
0.95
V R = 0 , f = 100 MHz
0.3
V R = 5 V , f = 1 MHz
0.21
0.3
IF = 5 mA, f = 100 MHz
1.2
2
IF = 10 mA, f = 100 MHz
1
IF = 10 mA, IR = 6 mA,IR = 3 mA
Type
BAR 63
BAR 63-04
BAR 63-05
BAR 63-06
Marking
G3
G4
G5
G6
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Typ
V R = 20 V
Marking
2
Min
1.2
V
pF
pF
75
ns
1.4
nH
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