FU-5VS12 Chip TVS diode Mechanical Data Notes Dice size AX=AY=410um/BX=BY=315um Wafer size 4” (Gross die:40,550pcs/Good die>37,710pcs) Chip Thickness 138um±12um Scribe line width 60um Top metal Al/Au/Ag Back side metal Al/Au/Ag/Sn Parameter Symbol Reverse stand-off voltage Peak pulse power Peak pulse current VRWM PPP IPP Electrostatic discharge VESD Max.junction temp. Conditions Value Unit Tp=8/20us Tp=8/20us 5.0 300* 17* V W A >8(Contact) IEC61000-4-2 Level 4 >15(Air) Tj KV °C 150 Characteristics TA=25°C Parameter Symbol Condition Min. Typ. Max. Unit VBR IT=1mA 6.3 6.7 7.1 V Reverse leakage current IR VR=5.0V 0.9 uA Clamping voltage VC 9.0* 18.0* V Diode capacitance Cj IR=1.0A IR=17A VR=0V f=1MHZ 140 pf Breakdown voltage 130 Notes: (1)sampling testing:no bad dice inking/guaranteed good die >93% (2)Testing follow customer (3)Tj=Ta+Rth(j-a)*(pf+pr),where Rth(j-a)-thermal resistance,Pf-forward power dissipation, Pr-revers power dissipation (4)**For device testing EW1608G6-FW-A Futurewafer Technology Co.,Ltd www.futurewafer.com.tw+886-3-3573583