MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 (TO−236) CASE 318 STYLE 6 MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector −Emitter Voltage VCES −30 Vdc Collector −Base Voltage VCBO −30 Vdc Emitter −Base Voltage VEBO −10 Vdc IC −500 mAdc MARKING DIAGRAM Symbol Max Unit 2x M G G 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous BASE 1 EMITTER 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD RqJA 1 2x PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M G = Device Code x = U for MMBTA63LT1G x = V for MMBTA64LT1G SMMBTA64LT1G = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBTA63LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBTA64LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SMMBTA64LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 6 1 Publication Order Number: MMBTA63LT1/D MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −30 − − −100 − −100 Unit OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (IC = −100 mAdc) Collector Cutoff Current (VCB = −30 Vdc) ICBO Emitter Cutoff Current (VEB = −10 Vdc) IEBO Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mAdc, VCE = −5.0 Vdc) MMBTA63 (IC = −10 mAdc, VCE = −5.0 Vdc) MMBTA64, SMMBTA64 (IC = −100 mAdc, VCE = −5.0 Vdc) MMBTA63 (IC = −100 mAdc, VCE = −5.0 Vdc) MMBTA64, SMMBTA64 hFE Collector −Emitter Saturation Voltage (IC = −100 mAdc, IB = −0.1 mAdc) VCE(sat) Base − Emitter On Voltage (IC = −100 mAdc, VCE = −5.0 Vdc) VBE(on) − 5,000 − 10,000 − 10,000 − 20,000 − − −1.5 − −2.0 125 − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125°C 100 70 50 -10 V 30 25°C VCE = -2.0 V -5.0 V 20 10 7.0 5.0 -55°C 3.0 2.0 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -2.0 TA = 25°C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) -1.6 -1.2 VBE(on) @ VCE = -5.0 V -0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 -0.4 0 -0.3 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 IC, COLLECTOR CURRENT (mA) -100 -200 -300 -2.0 TA = 25°C -1.8 -1.6 IC = -10 mA -50 mA -100 mA -175 mA -1.4 -1.2 -1.0 -0.8 -0.6 -0.1-0.2 -0.5 -1 -2 Figure 3. “On” Voltage 1 VCE = -5.0 V f = 100 MHz TA = 25°C IC, COLLECTOR CURRENT (A) |h FE |, HIGH FREQUENCY CURRENT GAIN -5 -10 -20 -50 -100-200-500 -1K-2K -5K-10K IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 10 4.0 3.0 2.0 -300 mA 1.0 0.4 0.2 0.1 -1.0 -2.0 1 ms 10 ms 0.1 100 ms 1s 0.01 Thermal Limit Single Pulse Test @ TA = 25°C 0.001 0.01 IC, COLLECTOR CURRENT (mA) 1.0 10 0.1 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 4. High Frequency Current Gain Figure 5. Safe Operating Area -5.0 -10 -20 -50 -100 -200 -500 -1K www.onsemi.com 3 100 MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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