M66280FP
5120 × 8-Bit Line Memory
REJ03F0253-0200
Rev.2.00
Sep 14, 2007
Description
The M66280FP is high speed line memory that uses high performance silicon gate CMOS process technology and
adopts the FIFO (First In First Out) structure consisting of 5120 words × 8 bits.
The M66280FP, performing reading and writing operations at different cycles independently and asynchronously, is
optimal for buffer memory to be used between equipment of different data processing speeds.
Features
•
•
•
•
•
•
•
•
Memory configuration:
5120 words × 8 bits (dynamic memory)
High speed cycle:
25 ns (Min)
High speed access:
18 ns (Max)
Output hold:
3 ns (Min)
Reading and writing operations can be completely carried out independently and asynchronously
Variable length delay bit
Input/output:
TTL direct connection allowable
Output:
3 states
Application
Digital copying machine, laser beam printer, high speed facsimile, etc.
13 14 15 16 21 22 23 24
1 2 3 4 9 10 11 12
Input buffer
Output buffer
VCC 18
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 1 of 13
Memory array
5120 × 8 bits
5 REB
Read control circuit
WCK 17
Write
clock input
Data outputs
Q0 to Q7
Read address counter
WRESB 19
Write
reset input
Data inputs
D0 to D7
Write address counter
WEB 20
Write
enable input
Write control circuit
Block Diagram
Read
enable input
6 RRESB
Read
reset input
8 RCK
Read
clock input
7 GND
M66280FP
Pin Arrangement
M66280FP
Data output
Read enable input
Read reset input
Read clock input
Data output
Q0
Q1
Q2
Q3
REB
RRESB
GND
RCK
Q4
Q5
Q6
Q7
1
24 D0
2
23 D1
3
22 D2
4
21 D3
5
20 WEB
6
7
19 WRESB Write reset input
18 VCC
8
17 WCK
9
16 D4
10
15 D5
11
14 D6
12
13 D7
(Top view)
Outline: PRSP0024GA-A (24P2Q-A)
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 2 of 13
Data input
Write enable input
Write clock input
Data input
M66280FP
Absolute Maximum Ratings
(Ta = 0 to 70°C, unless otherwise noted)
Item
Supply voltage
Symbol
VCC
Input voltage
Output voltage
VI
VO
Power dissipation
Storage temperature
Pd
Tstg
Ratings
−0.3 to +4.6
Unit
V
−0.3 to VCC + 0.3
−0.3 to VCC + 0.3
V
V
300
−55 to 150
mW
°C
Conditions
Value based on the GND pin
Ta = 25°C
Recommended Operating Conditions
Supply voltage
Item
Symbol
VCC
Supply voltage
Operating temperature
GND
Topr
Min
2.7
Typ
3.15
Max
3.6
Unit
V
0
0
70
V
°C
Electrical Characteristics
(Ta = 0 to 70°C, VCC = 2.7 to 3.6 V, GND = 0 V, unless otherwise noted)
Item
High-level input voltage
Symbol
VIH
Min
2.0
Typ
Max
Unit
V
Low-level input voltage
High-level output voltage
Test Conditions
VIL
VOH
VCC − 0.8
0.8
V
V
Low-level output voltage
High-level input current
VOL
IIH
0.55
1.0
V
µA
IOL = 4 mA
VI = VCC
WEB, WRESB, WCK,
REB, RRESB, RCK,
D0 to D7
Low-level input current
IIL
−1.0
µA
VI = GND
Off-state high-level output current
IOZH
5.0
µA
VO = VCC
Off-state low-level output current
Average supply current during
operation
IOZL
ICC
−5.0
70
µA
mA
Input capacitance
CI
10
pF
VO = GND
VI = VCC, GND, Output open
tWCK, tRCK = 25 ns
f = 1 MHz
Off-time output capacitance
CO
15
pF
f = 1 MHz
IOH = −4 mA
WEB, WRESB, WCK,
REB, RRESB, RCK,
D0 to D7
Function
When write enable input WEB is set to "L", the contents of data inputs D0 to D7 are read in synchronization with a
rising edge of write clock input WCK to perform writing operation. When this is the case, the write address counter is
also incremented simultaneously.
When WEB is set to "H", the writing operation is inhibited and the write address counter stops.
When write reset input WRESB is set to "L", the write address counter is initialized.
When read enable input REB is set to "L", the contents of memory are output to data outputs Q0 to Q7 in
synchronization with a rising edge of read clock input RCK to perform reading operation. When this is the case, the
read address counter is incremented simultaneously.
When REB is set to "H", the reading operation is inhibited and the read address counter stops. The outputs are placed
in a high impedance state.
When read reset input RRESB is set to "L", the read address counter is initialized.
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 3 of 13
M66280FP
Switching Characteristics
(Ta = 0 to 70°C, VCC = 2.7 to 3.6 V, GND = 0 V, unless otherwise noted)
Item
Symbol
Access time
tAC
Min
Typ
Max
18
Unit
ns
Output hold time
Output enable time
tOH
tOEN
3
3
18
ns
ns
Output disable time
tODIS
3
18
ns
Timing Requirements
(Ta = 0 to 70°C, VCC = 2.7 to 3.6 V, GND = 0 V, unless otherwise noted)
Min
Typ
Max
Unit
Write clock (WCK) cycle
Write clock (WCK) "H" pulse width
Item
tWCK
tWCKH
Symbol
25
11
ns
ns
Write clock (WCK) "L" pulse width
Read clock (RCK) cycle
tWCKL
tRCK
11
25
ns
ns
Read clock (RCK) "H" pulse width
Read clock (RCK) "L" pulse width
tRCKH
tRCKL
11
11
ns
ns
Input data setup time for WCK
Input data hold time for WCK
tDS
tDH
7
3
ns
ns
Reset setup time for WCK/RCK
Reset hold time for WCK/RCK
tRESS
tRESH
7
3
ns
ns
Reset non-selection setup time for WCK/RCK
Reset non-selection hold time for WCK/RCK
tNRESS
tNRESH
7
3
ns
ns
WEB setup time for WCK
WEB hold time for WCK
tWES
tWEH
7
3
ns
ns
WEB non-selection setup time for WCK
WEB non-selection hold time for WCK
tNWES
tNWEH
7
3
ns
ns
REB setup time for RCK
REB hold time for RCK
tRES
tREH
7
3
ns
ns
REB non-selection setup time for RCK
REB non-selection hold time for RCK
tNRES
tNREH
7
3
ns
ns
Input pulse up/down time
Data hold time*
tr, tf
tH
20
20
ns
ms
Notes: Perform reset operation after turning on power supply.
* For 1 line access, the following conditions must be satisfied:
WEB high-level period ≤ 20 ms − 5120 • tWCK − WRESB low-level period
REB high-level period ≤ 20 ms − 5120 • tRCK − RRESB low-level period
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 4 of 13
M66280FP
Switching Characteristics Measurement Circuit
VCC
RL = 1 kΩ
Qn
SW1
CL = 30 pF: tAC, tOH
Qn
SW2
CL = 5 pF: tOEN, tODIS
RL = 1 kΩ
Input pulse level:
0 to 3 V
Input pulse up/down time: 3 ns
Judging voltage Input:
1.3 V
Output: 1.3 V (However, tODIS (LZ) is judged with 10% of the output amplitude, while tODIS (HZ) is
judged with 90% of the output amplitude)
Load capacitance CL includes the floating capacity of connected lines and input capacitance of probe.
Item
SW1
SW2
tODIS (LZ)
tODIS (HZ)
Close
Open
Open
Close
tOEN (ZL)
tOEN (ZH)
Close
Open
Open
Close
tODIS and tOEN Measurement Condition
3V
RCK
1.3 V
1.3 V
GND
3V
REB
GND
tODIS (HZ)
tOEN (ZH)
VOH
90%
1.3 V
Qn
tODIS (LZ)
Qn
1.3 V
10%
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 5 of 13
tOEN (ZL)
VOL
M66280FP
Operation Timing
Write Cycle
n cycle
n + 1 cycle
n + 2 cycle
Disable cycle
n + 3 cycle
n + 4 cycle
WCK
tWCK
tWCKH tWCKL tWEH tNWES
tNWEH tWES
WEB
tDS tDH
Dn
(n)
(n + 1)
(n + 2)
(n + 3)
(n + 4)
WRESB = "H"
Write Reset Cycle
n − 1 cycle
n cycle
tWCK
tNRESH tRESS
Reset cycle
0 cycle
1 cycle
2 cycle
WCK
tRESH tNRESS
WRESB
tDS tDH
Dn
(n − 1)
(n)
(0)
(1)
(2)
WEB = "L"
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 6 of 13
M66280FP
Matters that Needs Attention when WCK Stops
n cycle
n + 1 cycle
n cycle
Disable cycle
WCK
tWCK
tNWES
WEB
Dn
tDS tDH
tDS tDH
(n)
(n)
Period for writing data (n)
into memory
Period for writing data (n)
into memory
WRESB = "H"
Input data of n cycle is read at the rising edge after WCK of n cycle and writing operation starts in the WCK low-level
period of n + 1 cycle. The writing operation is complete at the falling edge after n + 1 cycle.
To stop reading write data at n cycle, enter WCK before the rising edge after n + 1 cycle.
When the cycle next to n cycle is a disable cycle, WCK for a cycle requires to be entered after the disable cycle as well.
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 7 of 13
M66280FP
Read Cycle
n cycle
n + 1 cycle
n + 2 cycle
tRCK
tRCKH tRCKL
tREH tNRES
Disable cycle
n + 3 cycle
n + 4 cycle
RCK
tNREH
tRES
tAC
REB
tODIS
Qn
(n)
(n + 1)
tOEN
HIGH-Z
(n + 2)
(n + 4)
(n + 3)
tOH
RRESB = "H"
Read Reset Cycle
n − 1 cycle
n cycle
tRCK
tNRESH tRESS
Reset cycle
0 cycle
1 cycle
2 cycle
RCK
tRESH tNRESS
RRESB
tAC
Qn
(n − 1)
(n)
(0)
(0)
(0)
(1)
tOH
REB = "L"
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 8 of 13
(2)
M66280FP
Variable Length Delay Bit
1 Line (5120 Bits) Delay
Input data can be written at the rising edge of WCK after write cycle and output data is read at the rising edge of RCK
before read cycle to easily make 1 line delay.
0 cycle
1 cycle
2 cycle
5118 cycle 5119 cycle
5120 cycle 5121 cycle 5122 cycle
(0')
(1')
(2')
WCK
RCK
tRESS tRESH
WRESB
RRESB
tDS tDH
Dn
(0)
tDS tDH
(1)
(2)
(5117)
(5118)
(0')
(5119)
(2')
(3')
(1)
(2)
(3)
tOH
tAC
5120 cycle
(1')
(0)
Qn
WEB, REB = "L"
n-bit Delay Bit
(Reset at cycles according to the delay length)
0 cycle
1 cycle
n − 2 cycle n − 1 cycle
2 cycle
n cycle
(0')
n + 1 cycle n + 2 cycle n + 3 cycle
(1')
(2')
(3')
WCK
RCK
tRESS tRESH
tRESS tRESH
WRESB
RRESB
tDS tDH
Dn
(0)
tDS tDH
(1)
(2)
m cycle
Qn
(n − 3)
(n − 2)
(n − 1)
tAC
(0')
(1')
(2')
(3')
(1)
(2)
(3)
tOH
(0)
WEB, REB = "L"
m≥3
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 9 of 13
M66280FP
n-bit Delay 2
(Slides input timings of WRESB and RRESB at cycles according to the delay length)
0 cycle
1 cycle
n − 2 cycle n − 1 cycle
2 cycle
n + 1 cycle n + 2 cycle n + 3 cycle
n cycle
WCK
RCK
tRESS tRESH
WRESB
tRESS tRESH
RRESB
tDS tDH
Dn
(0)
tDS tDH
(1)
(2)
(n − 2)
(n − 1)
(n)
(0)
Qn
(n + 2)
(n + 3)
(1)
(2)
(3)
tOH
tAC
m cycle
(n + 1)
WEB, REB = "L"
m≥3
n-bit Delay 3
(Slides address by disabling REB in the period according to the delay length)
0 cycle
1 cycle
n − 1 cycle
2 cycle
n cycle
n + 1 cycle n + 2 cycle n + 3 cycle
WCK
RCK
tRESS tRESH
WRESB
RRESB
tNREH tRES
REB
tDS tDH
Dn
(0)
tDS tDH
(1)
(2)
m cycle
(n − 2)
(n − 1)
(n)
tAC
(n + 1)
(n + 2)
(n + 3)
(1)
(2)
(3)
tOH
HIGH-Z
Qn
(0)
WEB = "L"
m≥3
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 10 of 13
M66280FP
Reading Shortest n-cycle Write Data "n"
(Reading side n − 1 cycle starts after the end of writing side n − 1 cycle)
When the reading side n − 1 cycle starts before the end of the writing side n + 1 cycle, output Qn of n cycle is made
invalid. In the following diagram, reading operation of n − 1 cycle is invalid.
n + 1 cycle
n cycle
n + 2 cycle
n + 3 cycle
WCK
(n)
Dn
(n +1)
n − 2 cycle
(n +2)
n − 1 cycle
(n +3)
n cycle
RCK
Invalid
Qn
(n)
Reading Longest n-cycle Write Data "n": 1 Line Delay
(When writing side n-cycle <2>* starts, reading side n cycle <1>* then starts)
Output Qn of n cycle <1>* can be read until the start of reading side n cycle <1> and the start of writing side n cycle
<2>* overlap each other.
n cycle <1>*
0 cycle <2>*
n cycle <2>*
WCK
Dn
(n − 1) <1>*
(n) <1>*
n cycle <0>*
(0) <2>*
0 cycle <1>*
(n − 1) <2>*
(n) <2>*
n cycle <1>*
RCK
Qn
(n − 1) <0>*
(n) <0>*
Note: <0>*, <1>* and <2>* indicate value of lines.
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 11 of 13
(0) <1>*
(n − 1) <1>*
(n) <1>*
M66280FP
Application Example
Sub Scan Resolution Compensation Circuit with Laplacian Filter
D0
to
D7
B
(n + 1) line
image data
Q0
to
Q7
Adder
N + K {2N − (A + B) }
N
n line image data
M66280
×2
Subtractor
2N − (A + B)
1 line
delay
M66280
Q0
to
Q7
A
(n − 1) line
image data
1 line
delay
Sub scan direction
×K
Adder
A+B
D0
to
D7
Compensated
image data
Main scan direction
A
(n − 1) line
N
n line
B
(n + 1) line
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 12 of 13
N' = N + K { (N − A) + (N − B) }
= N + K {2N − (A + B)}
K: Laplacian coefficient
M66280FP
Package Dimensions
JEITA Package Code
P-SSOP24-5.3x10.1-0.80
RENESAS Code
PRSP0024GA-A
Previous Code
24P2Q-A
MASS[Typ.]
0.2g
E
13
*1
HE
24
NOTE)
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
F
1
12
Index mark
c
A2
A1
D
L
A
*2
*3
e
y
bp
Detail F
REJ03F0253-0200 Rev.2.00 Sep 14, 2007
Page 13 of 13
Reference
Symbol
D
E
A2
A
A1
bp
c
HE
e
y
L
Dimension in Millimeters
Min Nom Max
10.0 10.1 10.2
5.2 5.3 5.4
1.8
2.1
0.1 0.2
0
0.3 0.35 0.45
0.18 0.2 0.25
0°
8°
7.5 7.8 8.1
0.65 0.8 0.95
0.10
0.4 0.6 0.8
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