BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO −65 −45 −30 V Collector-Base Voltage VCBO −80 −50 −30 V Emitter−Base Voltage VEBO −5.0 V IC −100 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Rating BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 Collector Current − Continuous 2 EMITTER 3 1 2 SOT−23 (TO−236AB) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA PD MARKING DIAGRAM 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 11 xx M G G 1 xx = Device Code xx = (Refer to page 6) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: BC856ALT1/D BC856ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO −65 −45 −30 − − − − − − V Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) BC856 Series BC857A, BC857B Only BC858, BC859 Series V(BR)CES −80 −50 −30 − − − − − − V Collector −Base Breakdown Voltage (IC = −10 mA) BC856 Series BC857 Series BC858, BC859 Series V(BR)CBO −80 −50 −30 − − − − − − V Emitter−Base Breakdown Voltage (IE = −1.0 mA) BC856 Series BC857 Series BC858, BC859 Series V(BR)EBO −5.0 −5.0 −5.0 − − − − − − V ICBO − − − − −15 −4.0 nA mA hFE − − − 90 150 270 − − − − 125 220 420 180 290 520 250 475 800 − − − − −0.3 −0.65 − − −0.7 −0.9 − − −0.6 − − − −0.75 −0.82 fT 100 − − MHz Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series NF Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) http://onsemi.com 2 dB − − − − 10 4.0 BC856ALT1G Series BC857/BC858/BC859 -1.0 1.5 TA = 25°C -0.9 VCE = -10 V TA = 25°C VBE(sat) @ IC/IB = 10 -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 Figure 1. Normalized DC Current Gain 1.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 0 -0.02 -10 -0.1 -1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -20 -0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base−Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 Figure 2. “Saturation” and “On” Voltages -2.0 -0.8 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -20 -30 -40 400 300 200 150 VCE = -10 V TA = 25°C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 BC856ALT1G Series BC856 TJ = 25°C VCE = -5.0 V TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 -0.1 -0.2 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.5 -5.0 -10 -20 -50 -100 -200 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage -2.0 -1.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -20 -1.4 -1.8 -2.6 -3.0 -0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C Cib 10 8.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -5.0 -10 -20 -50 -2.0 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base−Emitter Temperature Coefficient 40 6.0 -55°C to 125°C -2.2 Figure 9. Collector Saturation Region 20 qVB for VBE VCE = -5.0 V 500 200 100 50 20 -50 -100 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC856ALT1G Series 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE t1 t2 0.03 DUTY CYCLE, D = t1/t2 0.02 0.01 0.1 ZqJC(t) = r(t) RqJC RqJC = 83.3°C/W MAX ZqJA(t) = r(t) RqJA RqJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) P(pk) 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k Figure 13. Thermal Response The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -200 IC, COLLECTOR CURRENT (mA) 1s 3 ms -100 TA = 25°C -50 TJ = 25°C -10 BC558, BC559 BC557 BC556 -5.0 -2.0 -1.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 5 BC856ALT1G Series ORDERING INFORMATION Device Marking BC856ALT1G BC856ALT3G 3A BC856BLT1G BC856BLT3G BC857ALT1G 3B BC858ALT1G BC858BLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 (Pb−Free) 3F BC857CLT1G BC857CLT3G Shipping† SOT−23 (Pb−Free) 3E BC857BLT1G BC857BLT3G Package 3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel 3J SOT−23 (Pb−Free) 3K SOT−23 (Pb−Free) BC858BLT3G 3,000 / Tape & Reel 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel BC858CLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel BC859BLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel BC858CLT1G BC859BLT3G 3L 4B BC859CLT1G BC859CLT3G 4C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 BC856ALT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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