ADPOW APTGT75DH120T Asymmetrical - bridge fast trench field stop igbt power module Datasheet

APTGT75DH120T
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT®
Power Module
VBUS
VBUS SENSE
Q1
CR3
E1
OUT2
Q4
G4
CR2
E4
0/VBUS SENSE
NT C1
NT C2
0/VBUS
VBUS
SENSE
G4
VBUS
0/VBUS
E1
0/VBUS
SENSE
G1
OUT2
E4
OUT1
NTC2
NTC1
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
110
75
175
±20
357
Tj = 125°C
150A @ 1150V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
May, 2005
OUT1
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT75DH120T – Rev 0
G1
VCES = 1200V
IC = 75A @ Tc = 80°C
APTGT75DH120T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Tf
Eon
Eoff
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Diode ratings and characteristics
Symbol Characteristic
VRRM
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 75A
Tj = 125°C
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
5.0
Min
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
R G = 4.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
R G = 4.7Ω
Test Conditions
Typ
1.7
2.0
5.8
Typ
5345
280
240
280
40
450
Max
Unit
250
2.1
µA
6.5
400
V
nA
Max
Unit
pF
ns
75
290
45
ns
550
90
7
8
Min
Typ
mJ
Max
1200
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1200V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 75A
trr
Reverse Recovery Time
IF = 75A
VR = 600V
Qrr
Reverse Recovery Charge
di/dt =2000A/µs
Unit
V
Tj = 25°C
Tj = 125°C
250
500
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
75
1.5
1.4
150
Tj = 125°C
Tj = 25°C
250
7
Tj = 125°C
13.5
µA
A
2.0
V
ns
µC
May, 2005
IRM
V
APT website – http://www.advancedpower.com
2-5
APTGT75DH120T – Rev 0
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Min
APTGT75DH120T
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.35
0.48
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
2500
-40
-40
-40
1.5
°C/W
V
150
125
125
4.7
160
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGT75DH120T – Rev 0
May, 2005
Package outline (dimensions in mm)
APTGT75DH120T
Typical Performance Curve
Output Characteristics (VGE =15V)
150
Output Characteristics
150
T J = 125°C
125
T J=25°C
VGE =17V
T J=125°C
75
VGE =15V
75
50
50
25
25
0
VGE=9V
0
0
1
2
V CE (V)
3
0
4
16
TJ =25°C
125
E (mJ)
IC (A)
12
75
50
2
VCE (V)
3
4
VCE = 600V
VGE = 15V
RG = 4.7Ω
TJ = 125°C
14
TJ =125°C
100
1
Energy losses vs Collector Current
Transfert Characteristics
150
T J=125°C
10
Eoff
Eon
8
Er
6
4
25
2
0
0
5
6
7
8
9
10
11
0
12
25
50
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE =15V
IC = 75A
TJ = 125°C
14
12
10
100
125
150
Reverse Bias Safe Operating Area
175
Eon
150
125
Eoff
IC (A)
16
75
IC (A)
V GE (V)
E (mJ)
VGE=13V
100
100
IC (A)
IC (A)
125
8
Er
6
100
75
4
50
2
25
0
VGE =15V
TJ=125°C
RG=4.7Ω
0
0
4
8
12 16 20 24
Gate Resistance (ohms)
28
32
0
400
800
V CE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.3
0.25
IGBT
0.9
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0
0.00001
May, 2005
0.35
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT75DH120T – Rev 0
Thermal Impedance (°C/W)
0.4
APTGT75DH120T
Forward Characteristic of diode
200
VCE =600V
D=50%
RG=4.7Ω
T J=125°C
50
ZCS
40
175
125
T c=75°C
30
T J=25°C
150
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
ZVS
T J=125°C
100
75
20
50
Hard
switching
10
TJ =125°C
25
T J=25°C
0
0
0
20
40
60
IC (A)
80
100
0
120
0.4
0.8
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.5
0.9
0.4
0.3
Diode
0.7
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT75DH120T – Rev 0
May, 2005
rectangular Pulse Duration (Seconds)
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