MIXA20WB1200TML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 150 A IC25 IFSM = 17 A IC25 = 28 A = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product) MIXA20WB1200TML E72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required for the whole drive • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) • Temperature sense included • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage • AC motor drives • Pumps, Fans • Washing machines • Air-conditioning system • Inverter and power supplies • DCB based "E1-Pack" • Assembly height is 17 mm • Insulated base plate • UL registered E72873 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20101103c 1-8 MIXA20WB1200TML Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 16 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 15 A typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 28 20 A A TC = 25°C 100 W 2.1 V V TVJ = 25°C continuous transient TVJ = 25°C TVJ = 125°C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = ±15 V; RG = 56 W; VCEK = 1200 V TVJ = 125°C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C RG = 56 W; tp = 10 µs; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 56 W 1.8 2.1 5.5 TVJ = 125°C 6.0 6.5 V 0.02 0.2 0.2 mA mA 500 nA 48 nC 70 40 250 100 1.55 1.7 ns ns ns ns mJ mJ 45 60 A A 1.26 0.42 K/W K/W Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 20 A; VGE = 0 V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -400 A/µs IF = 20 A; VGE = 0 V RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink typ. max. Unit TVJ = 25°C 1200 V TC = 25°C TC = 80°C 33 22 A A 2.2 V V TVJ = 25°C TVJ = 125°C 1.95 1.95 TVJ = 125°C 3 20 350 0.7 (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved min. µC A ns mJ 1.5 0.5 K/W K/W 20101103c 2-8 MIXA20WB1200TML Brake T7 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 9 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 10 A typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 17 12 A A TC = 25°C 63 W 2.1 V V TVJ = 25°C continuous transient TVJ = 25°C TVJ = 125°C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = ±15 V; RG = 100 W; VCEK = 1200 V TVJ = 125°C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C RG = 100 W; tp = 10 µs; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 100 W 1.8 2.1 5.5 TVJ = 125°C 6.0 6.5 V 0.01 0.1 0.1 mA mA 500 nA 27 nC 70 40 250 100 1.1 1.1 ns ns ns ns mJ mJ 30 40 A A 2.0 0.7 K/W K/W Brake Chopper D7 Ratings typ. max. Unit TVJ = 150°C 1200 V TC = 25°C TC = 80°C 33 22 A A 1.95 1.95 2.2 V V TVJ = 25°C TVJ = 125°C 0.01 0.1 0.1 mA mA TVJ = 125°C 3 20 350 0.7 Symbol Definitions Conditions VRRM max. repetitive reverse voltage IF25 IF80 forward current VF forward voltage IF = 20 A; VGE = 0 V TVJ = 25°C TVJ = 125°C IR reverse current VR = VRRM Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = 400 A/µs IF = 20 A; VGE = 0 V RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved min. µC A ns mJ 1.5 0.5 K/W K/W 20101103c 3-8 MIXA20WB1200TML Input Rectifier Bridge D8 - D11 Symbol Definitions Conditions min. Ratings typ. max. Unit VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V IFAV IDAVM average forward current max. average DC output current sine 180° rect.; d = 1/3 TC = 80°C TC = 80°C 37 105 A A IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25°C TVJ = 125°C 320 280 A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25°C TVJ = 125°C 510 390 A2s A2s Ptot total power dissipation 110 W VF forward voltage IF = 50 A TVJ = 25°C TVJ = 125°C 1.36 1.36 1.7 V V IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C 0.02 0.2 mA mA RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink 1.1 K/W K/W TC = 25°C (per diode) (per diode) 0.36 Temperature Sensor NTC Symbol Definitions R25 B25/50 resistance Conditions min. TC = 25°C 4.45 Ratings typ. max. 4.7 3510 5.0 Unit kW K Module Symbol Definitions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque dS dA creep distance on surface strike distance through air Conditions min. Ratings typ. max. Unit 125 150 125 °C °C °C 2500 V~ -40 -40 IISOL < 1 mA; 50/60 Hz (M4) 2.0 2.2 12.7 7.6 Weight Nm mm mm 40 g Equivalent Circuits for Simulation I R0 Ratings typ. max. Unit TVJ = 150°C 0.88 9.0 V mW T1 - T6 TVJ = 150°C 1.1 86.3 V mW free wheeling diode D1 - D6 TVJ = 150°C 1.19 40.0 V mW V0 R0 IGBT T7 TVJ = 150°C 1.1 153 V mW V0 R0 free wheeling diode D7 TVJ = 150°C 1.19 40 V mW V0 Symbol Definitions Conditions V0 R0 rectifier diode D8 - D13 V0 R0 IGBT V0 R0 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved min. TC = 25°C unless otherwise stated 20101103c 4-8 MIXA20WB1200TML Circuit Diagram Outline Drawing Dimensions in mm (1 mm = 0.0394“) Part number M I X A 20 WB 1200 T ML Ordering Part Name Marking on Product Standard MIXA 20 WB 1200 TML MIXA20WB1200TML IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved = Module = IGBT = XPT = standard = Current Rating [A] = 6-Pack + 3~ Rectifier Bridge & Brake Unit = Reverse Voltage [V] = NTC = E1-Pack Delivering Mode Base Qty Ordering Code Box 10 508630 20101103c 5-8 MIXA20WB1200TML IGBT T1 - T6 30 IC [A] 30 VGE = 15 V 25 25 20 20 TVJ = 25°C 15 IC TVJ = 125°C 11 V TVJ = 125°C 15 [A] 10 9V 10 5 0 13 V VGE = 15 V 17 V 19 V 5 0 1 2 0 3 VCE [V] Fig. 1 Typ. output characteristics 0 1 2 3 VCE [V] 4 5 Fig. 2 Typ. output characteristics 30 20 IC = 15 A VCE = 600 V 25 15 20 IC [A] VGE 15 10 [V] 10 5 0 5 TVJ = 125°C TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 10 20 Fig. 3 Typ. tranfer characteristics E Eon 2.4 Eoff E [mJ] [mJ] 1 5 10 60 15 20 25 30 35 IC [A] Fig. 5 Typ. switching energy vs. collector current 140 160 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved IC = 15 A VCE = 600 V VGE = ±15 V TVJ = 125°C 2.0 1.6 0 50 2.8 RG = 56 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 2 0 40 Fig. 4 Typ. turn-on gate charge 4 3 30 QG [nC] VGE [V] 1.2 40 Eoff Eon 60 80 100 120 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20101103c 6-8 MIXA20WB1200TML Diode D1 - D6 40 5 TVJ = 125°C VR = 600 V 30 4 40 A IF Qrr 20 [A] 3 20 A [µC] TVJ = 125°C 10 2 TVJ = 25°C 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 10 A 1 200 3.0 Fig. 7 Typ. Forward current versus VF 300 400 500 diF /dt [A/µs] 600 700 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 35 700 40 A TVJ = 125°C 30 20 A 25 TVJ = 125°C 600 VR = 600 V VR = 600 V 500 10 A IRR 20 [A] 15 [ns] 300 10 200 5 100 trr 0 200 300 400 500 diF /dt [A/µs] 600 400 40 A 20 A 10 A 0 200 700 Fig. 9 Typ. peak reverse current IRM vs. di/dt 300 400 500 diF /dt [A/µs] 600 700 Fig. 10 Typ. recovery time trr versus di/dt 1.4 10 TVJ = 125°C VR = 600 V 1.2 Diode 1.0 1 40 A Erec IGBT ZthJC 0.8 20 A [mJ] IGBT [K/W] 0.6 Ri 0.1 0.4 300 400 500 diF /dt [A/µs] 600 700 Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Ri ti 1 0.252 0.0015 0.461 0.0015 10 A 0.2 200 FRD ti 0.01 0.001 0.01 2 0.209 0.03 0.291 0.03 3 0.541 0.03 0.423 0.03 4 0.258 0.08 0.326 0.08 0.1 tp [s] 1 10 Fig. 12 Typ. transient thermal impedance 20101103c 7-8 MIXA20WB1200TML NTC 100000 10000 R [Ω] 1000 100 10 0 25 50 75 100 125 150 TC [°C] Typ. NTC temperature Fig. 13 Typ.resistance thermistor vs. resistance vs. temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20101103c 8-8