IDT IDT71V3557S Synchronous zbt sram Datasheet

128K x 36, 256K x 18,
3.3V Synchronous ZBT™ SRAMs
3.3V I/O, Burst Counter,
Flow-Through Outputs
Features
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IDT71V3557S
IDT71V3559S
IDT71V3557SA
IDT71V3559SA
it read or write.
The IDT71V3557/59 contain address, data-in and control signal
registers. The outputs are flow-through (no output data register). Output
enable is the only asynchronous signal and can be used to disable the
outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V3557/59
to be suspended as long as necessary. All synchronous inputs are
ignored when (CEN) is high and the internal device registers will hold
their previous values.
There are three chip enable pins (CE1, CE2, CE2) that allow the user
to deselect the device when desired. If any one of these three is not asserted
when ADV/LD is low, no new memory operation can be
initiated. However, any pending data transfers (reads or writes) will
be completed. The data bus will tri-state one cycle after chip is deselected or a write is initiated.
The IDT71V3557/59 have an on-chip burst counter. In the burst
mode, the IDT71V3557/59 can provide four cycles of data for a single
address presented to the SRAM. The order of the burst sequence is
defined by the LBO input pin. The LBO pin selects between linear and
interleaved burst sequence. The ADV/LD signal is used to load a new
external address (ADV/LD = LOW) or increment the internal burst counter
(ADV/LD = HIGH).
The IDT71V3557/59 SRAMs utilize IDT's latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
128K x 36, 256K x 18 memory configurations
Supports high performance system speed - 100 MHz
(7.5 ns Clock-to-Data Access)
ZBTTM Feature - No dead cycles between write and read
cycles
Internally synchronized output buffer enable eliminates
the need to control OE
Single R/W (READ/WRITE) control pin
4-word burst capability (Interleaved or linear)
Individual byte write (BW1 - BW4) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%), 3.3V (±5%) I/O Supply (VDDQ)
Optional Boundary Scan JTAG Interface (IEEE 1149.1
complaint)
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine
pitch ball grid array (fBGA)
Description
The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Megabit) synchronous SRAMs organized as 128K x 36/256K x 18. They are
designed to eliminate dead bus cycles when turning the bus around
between reads and writes, or writes and reads. Thus they have been
given the name ZBTTM, or Zero Bus Turnaround.
Address and control signals are applied to the SRAM during one clock
cycle, and on the next clock cycle the associated data cycle occurs, be
Pin Description Summary
A0-A17
Address Inputs
Input
Synchronous
CE1, CE2, CE2
Chip Enables
Input
Synchronous
OE
Output Enable
Input
Asynchronous
R/W
Read/Write Signal
Input
Synchronous
CEN
Clock Enable
Input
Synchronous
BW1, BW2, BW3, BW4
Individual Byte Write Selects
Input
Synchronous
CLK
Clock
Input
N/A
ADV/LD
Advance burst address / Load new address
Input
Synchronous
LBO
Linear / Interleaved Burst Order
Input
Static
TMS
Test Mode Select
Input
Synchronous
TDI
Test Data Input
Input
Synchronous
TCK
Test Clock
TDO
Test Data Output
Input
N/A
Output
Synchronous
TRST
JTAG Reset (Optional)
Input
Asynchronous
Input
Synchronous
I/O
Synchronous
ZZ
Sleep Mode
I/O0-I/O31, I/OP1-I/OP4
Data Input / Output
VDD, VDDQ
Core Power, I/O Power
Supply
Static
VSS
Ground
Supply
Static
5282 tbl 01
1
©2009 Integrated Device Technology, Inc.
FEBRUARY 2009
DSC-5282/09
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Pin Definitions (1)
Symbol
Pin Function
I/O
Active
Description
A0-A17
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a combination of the rising edge of CLK,
ADV/LD low, CEN low, and true chip enables.
ADV/LD
Advance / Load
I
N/A
ADV/LD is a synchronous input that is used to load the internal registers with new address and control when it
is sampled low at the rising edge of clock with the chip selected. When ADV/ LD is low with the chip
deselected, any burst in progress is terminated. When ADV/LD is sampled high then the internal burst
counter is advanced for any burst that was in progress. The external addresses are ignored when ADV/ LD is
sampled high.
R/W
Read / Write
I
N/A
R/W signal is a synchronous input that identifies whether the current load cycle initiated is a Read or Write
access to the memory array. The data bus activity for the current cycle takes place one clock cycle later.
CEN
Clock Enable
I
LOW
Sy nchronous Clock Enable Input. When CEN is sampled high, all other synchronous inputs, including clock
are ignored and outputs remain unc hanged. The effect of CEN sampled high on the device outputs is as if
the low to high clock transition did not occur. For normal operation, CEN must be samp led low at rising edge
of clock.
BW1-BW4
Individual Byte
Write Enables
I
LOW
Synchronous byte write enables. Each 9-bit byte has its own active low byte write enable. On load write
cycles (When R/W and ADV/LD are sampled low) the appropriate byte write signal (BW1-BW4) must be valid.
The byte write signal must also be valid on each cycle of a burst write. Byte Write signals are ignored when
R/W is sampled high. The appropriate byte(s) of data are written into the device one cycle later. BW1-BW4
can all be tied low if always doing write to the entire 36-bit word.
CE1, CE2
Chip Enables
I
LOW
Synchronous active low chip enable. CE1 and CE2 are used with CE 2 to enable the IDT71V3557/59. (CE1 or
CE2 sampled high or CE 2 sampled low) and ADV/LD low at the rising edge of clock, initiates a deselect
cycle. The ZBTTM has a one cycle dese lect, i.e., the data bus will tri-state one clock cycle after deselect is
initiated.
CE2
Chip Enable
I
HIGH
Synchronous active high chip enable. CE 2 is used with CE1 and CE2 to enable the chip. CE 2 has inverted
polarity but otherwise identical to CE1 and CE2.
CLK
Clock
I
N/A
This is the clock input to the IDT71V3557/59. Except for OE, all timing references fo r the device are made
with respect to the rising edge of CLK.
I/O0-I/O31
I/OP1-I/OP4
Data Input/Output
I/O
N/A
Data input/output (I/O) pins. The data input path is registered, triggered by the rising edge of CLK. The data
output path is flow-through (no output register).
LBO
Linear Burst Order
I
LOW
Burst order selection input. When LBO is high the Interleaved burst sequence is selected. When LBO is low
the Linear burst sequence is selected. LBO is a static input, and it must not change during device operation..
OE
Output Enable
I
LOW
Asynchronous output enable. OE must be low to read data from the 71V3557/59. When OE is HIGH the I/O
pins are in a high-impedance state. OE does not need to be actively controlled for read and write cycles. In
normal operation, OE can be tied low.
TMS
Test Mode Select
I
N/A
Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal pullup.
TDI
Test Data Input
I
N/A
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an
internal pullup.
TCK
Test Clock
I
N/A
Clock input of TAP controller. Each TAP event is clocked. Test inputs are captured o n rising edge of TCK,
while test outputs are driven from the falling edge of TCK. This pin has an internal pullup.
TDO
Test Data Output
O
N/A
Serial output of registers placed between TDI and TDO. This output is active depending on the state of the
TAP controller.
TRST
JTAG Reset
(Optional)
I
LOW
Optional Asynchronous JTAG reset. Can be used to reset the TAP controller, but not required. JTAG reset
occurs automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not used TRST can
be left floating. This pin has an internal pullup.
ZZ
Sleep Mode
I
HIGH
Synchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71V3557/3559 to
its lowest power consumption level. Data retention is guaranteed in Sleep Mode. This pin has an internal
pulldown.
V DD
Power Supply
N/A
N/A
3.3V core power supply.
VDDQ
Power Supply
N/A
N/A
3.3V I/O Supply.
V SS
Ground
N/A
N/A
Ground.
5282 tbl 02
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Functional Block Diagram — 128K x 36
128K x 36 BIT
MEMORY ARRAY
LBO
Address A [0:16]
D
Q
Address
D
Q
Control
CE1, CE2, CE2
R/W
Input Register
CEN
ADV/LD
BWx
D
DI
DO
Q
Control Logic
Clk
Mux
Clock
Sel
Gate
OE
,
TMS
TDI
TCK
TRST
Data I/O [0:31], I/O P[1:4]
JTAG
TDO
5282 drw 01
(optional)
6.42
3
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Functional Block Diagram — 256K x 18
256K x 18 BIT
MEMORY ARRAY
LBO
Address A [0:17]
D
Q
Address
D
Q
Control
CE1, CE2, CE2
R/W
Input Register
CEN
ADV/LD
BWx
DI
D
DO
Q
Control Logic
Clk
Mux
Clock
Gate
OE
Data I/O [0:15], I/O P[1:2]
TMS
TDI
TCK
JTAG
TDO
5282 drw 01a
TRST
(optional)
Recommended DC Operating
Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.135
3.3
3.465
V
VDDQ
I/O Supply Voltage
3.135
3.3
3.465
V
0
0
0
V
VDD + 0.3
VSS
Ground
VIH
Input High Voltage - Inputs
2.0
____
VIH
Input High Voltage - I/O
2.0
____
VIL
Input Low Voltage
Sel
(1)
-0.3
____
VDDQ + 0.3
V
(2)
0.8
V
V
5282 tbl 04
NOTES:
1. VIL (min.) = –1.0V for pulse width less than tCYC/2, once per cycle.
2. VIH (max.) = +6.0V for pulse width less than t CYC/2, once per cycle.
6.42
4
,
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature(1)
VSS
VDD
VDDQ
Commercial
0°C to +70°C
0V
3.3V±5%
3.3V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
3.3V±5%
5282 tbl 05
NOTES:
1. TA is the "instant on" case temperature.
CE2
BW4
BW3
BW2
BW1
CE2
VDD
VSS
CLK
R/W
CEN
OE
ADV/LD
NC
NC
A8
A9
A6
A7
CE1
Pin Configuration — 128K x 36
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/OP3
I/O16
I/O17
VDDQ
VSS
I/O18
I/O19
I/O20
I/O21
VSS
VDDQ
I/O22
I/O23
VSS(1)
VDD
VDD(2)
VSS
I/O24
I/O25
VDDQ
VSS
I/O26
I/O27
I/O28
I/O29
VSS
VDDQ
I/O30
I/O31
I/OP4
1
80
2
79
3
78
77
4
5
6
76
75
7
74
8
73
9
72
71
10
11
70
12
69
13
68
14
67
15
66
16
65
64
17
18
19
63
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
53
28
29
I/OP2
I/O15
I/O14
VDDQ
VSS
I/O13
I/O12
I/O11
I/O10
VSS
VDDQ
I/O9
I/O8
VSS
VSS(1)
VDD
VSS/ZZ(1,3)
I/O7
I/O6
VDDQ
VSS
I/O5
I/O4
I/O3
I/O2
VSS
VDDQ
I/O1
I/O0
I/OP1
52
51
30
,
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A10
A11
A12
A13
A14
A15
A16
5282 drw 02
Top View
100 TQFP
NOTES:
1. Pins 14, 64, and 66 do not have to be connected directly to VSS as long as the input voltage is < VIL.
2. Pin 16 does not have to be connected directly to VDD as long as the input voltage is > VIH.
3. Pins 83 and 84 are reserved for future 8M and 16M respectively.
4. Pin 64 supports ZZ (sleep mode) for the latest die revisions.
6.42
5
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol
CE2
NC
NC
BW2
BW1
CE2
VDD
VSS
CLK
R/W
CEN
OE
ADV/LD
NC(3)
NC(3)
A8
A9
A6
A7
CE1
Pin Configuration — 256K x 18
1
80
2
79
3
VDDQ
VSS
NC
NC
I/O8
I/O9
VSS
VDDQ
I/O10
I/O11
VSS(1)
VDD
VDD(2)
VSS
I/O12
I/O13
VDDQ
VSS
I/O14
I/O15
I/OP2
NC
VSS
VDDQ
NC
NC
NC
4
78
77
5
6
76
75
7
74
8
73
9
72
71
10
11
70
12
69
13
68
14
67
15
66
16
17
65
64
18
63
19
62
20
61
21
60
22
59
23
24
58
57
25
56
26
55
27
54
53
28
29
52
51
30
A10
NC
NC
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
VSS(1)
VDD
VSS/ZZ(1,4)
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
NC
VSS
VDDQ
NC
NC
NC
,
Commercial &
Industrial Values
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
Commercial
Operating Temperature
-0 to +70
o
C
Industrial
Operating Temperature
-40 to +85
o
C
TBIAS
Temperature
Under Bias
-55 to +125
o
C
TSTG
Storage
Temperature
-55 to +125
o
C
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
NC
NC
Rating
TA
(7)
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A11
A12
A13
A14
A15
A16
A17
5282 drw 02a
Top View
100 TQFP
NOTES:
1. Pins 14, 64, and 66 do not have to be connected directly to VSS as long as the input voltage
is < VIL .
2. Pin 16 does not have to be connected directly to VDD as long as the input voltage
is > VIH.
3. Pins 83 and 84 are reserved for future 8M and 16M respectively.
4. Pin 64 supports ZZ (sleep mode) for the latest die revisions.
100 TQFP Capacitance(1)
(TA = +25°C, F = 1.0MHZ)
Symbol
Parameter
(1)
CIN
Input Capacitance
CI/O
I/O Capacitance
5282 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed VDDQ during power
supply ramp up.
7. TA is the "instant on" case temperature.
119 BGA Capacitance(1)
(TA = +25°C, F = 1.0MHZ)
Conditions
Max.
Unit
VIN = 3dV
5
pF
Symbol
VOUT = 3dV
7
pF
CIN
Input Capacitance
CI/O
I/O Capacitance
5282 tbl 07
119 BGA Capacitance(1)
Parameter(1)
CIN
Input Capacitance
CI/O
I/O Capacitance
Conditions
Max.
Unit
VIN = 3dV
7
pF
VOUT = 3dV
7
pF
5282 tbl 07a
(TA = +25°C, F = 1.0MHZ)
Symbol
Parameter(1)
Conditions
Max.
Unit
VIN = 3dV
TBD
pF
VOUT = 3dV
TBD
pF
5282 tbl 07b
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
6
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Pin Configuration — 128K x 36, 119 BGA
1
2
3
4
5
6
7
A
VDDQ
A6
A4
NC
A8
A16
VDDQ
B
NC
CE 2
A3
ADV/LD
A9
CE2
NC
C
NC
A7
A2
VDD
A12
A15
NC
D
I/O16
I/OP3
VSS
NC
VSS
I/O P2
I/O15
E
I/O17
I/O18
VSS
CE1
VSS
I/O13
I/O14
OE
VSS
I/O12
VDDQ
I/O10
F
VDDQ
I/O19
VSS
G
I/O20
I/O21
BW3
NC
BW2
I/O11
H
I/O22
I/O23
VSS
R/W
VSS
I/O9
I/O8
J
VDDQ
VDD
V DD(2)
VDD
VSS(1)
VDD
VDDQ
K
I/O24
I/O26
VSS
CLK
VSS
I/O6
I/O7
L
I/O25
I/O27
BW4
NC
BW1
I/O4
I/O5
M
VDDQ
I/O28
VSS
CEN
VSS
I/O3
VDDQ
N
I/O29
I/O30
VSS
A1
VSS
I/O2
I/O1
P
I/O31
I/OP4
VSS
A0
VSS
I/OP1
I/O0
R
NC
A5
LBO
VDD
VSS(1)
A13
NC
T
NC
NC
A10
A11
A14
NC
VDDQ
NC/TMS(3)
NC/TDI(3)
U
NC/TCK(3)
Top View
,
NC/ZZ(5)
NC/TDO(3) NC/TRST(3,4)
VDDQ
5282 drw 13a
Pin Configuration - 256K x 18, 119 BGA
1
2
3
A
VDDQ
A6
A4
B
NC
CE2
A3
4
5
6
7
NC
A8
A16
VDDQ
ADV/LD
A9
CE2
NC
C
NC
A7
A2
VDD
A13
A17
NC
D
I/O8
NC
VSS
NC
VSS
I/OP1
NC
E
NC
I/O9
VSS
CE1
VSS
NC
I/O7
F
VDDQ
NC
VSS
OE
VSS
BW2
I/O6
VDDQ
VSS
NC
I/O5
I/O4
NC
G
NC
I/O10
H
I/O11
NC
VSS
R/W
VSS
J
VDDQ
VDD
VDD(2)
VDD
VSS(1)
VDD
VDDQ
K
NC
I/O12
VSS
CLK
VSS
NC
I/O3
NC
L
I/O13
NC
VSS
NC
BW1
I/O2
NC
M
VDDQ
I/O14
VSS
CEN
VSS
NC
VDDQ
N
I/O15
NC
VSS
A1
VSS
I/O1
NC
P
NC
I/OP2
VSS
A0
VSS
NC
I/O0
R
NC
A5
LBO
VDD
VSS(1)
A12
NC
T
NC
A10
A15
NC
A14
A11
NC/ZZ(5)
U
VDDQ
NC/TMS(3) NC/TDI(3)
NC/TCK(3) NC/TDO(3) NC/TRST(3,4) VDDQ
Top View
,
5282 drw 13b
NOTES:
1. R5 and J5 do not have to be directly connected to VSS as long as the input voltage is < VIL.
2. J3 does not have to be directly connected directly to VDD as long as the input voltage is ≥ VIH.
3. G4 and A4 are reserved for future 8M and 16M respectively.
4. These pins are NC for the "S" version and the JTAG signal listed for the "SA" version.
5. TRST is offered as an optional JTAG reset if requested in the application. If not needed, can be left floating and will internally be pulled to VDD.
6. Pin T7 supports ZZ (sleep mode) for the latest die revisions.
6.42
7
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Pin Configuration — 128K x 36, 165 fBGA
1
2
3
4
5
6
7
8
9
10
11
A
NC
A7
CE1
BW3
BW2
CE2
CEN
ADV/LD
NC
A8
NC
B
NC
A6
CE2
BW4
BW1
CLK
R/W
OE
NC
A9
NC
C
I/OP3
NC
V DDQ
V SS
V SS
V SS
V SS
V SS
V DDQ
NC
I/OP2
D
I/O17
I/O16
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O15
I/O14
E
I/O19
I/O18
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O13
I/O12
F
I/O21
I/O20
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O11
I/O10
G
I/O23
I/O22
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O9
I/O8
H
V SS
V DD
NC
V DD
V SS
V SS
V SS
V DD
NC
NC
NC/ZZ(5)
J
I/O25
I/O24
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O7
I/O6
K
I/O27
I/O26
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O5
I/O4
L
I/O29
I/O28
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O3
I/O2
M
I/O31
I/O30
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O1
I/O0
N
I/OP4
NC
V DDQ
V SS
NC/TRST(3,4)
NC
V SS(1)
V SS
V DDQ
NC
I/OP1
P
NC
NC
A5
A2
NC/TDI(3)
A1
NC/TDO(3)
A10
A13
A14
NC
LBO
NC
A4
A3
NC/TMS
A0
NC/TCK
A11
A12
A15
A16
R
(1)
(2)
(3)
(3)
5282 tbl 25
Pin Configuration - 256K x 18, 165 fBGA
1
2
3
4
5
6
7
8
9
10
11
A
NC
A7
CE1
BW2
NC
CE2
CEN
ADV/LD
NC
A8
A10
B
NC
A6
CE2
NC
BW1
CLK
R/W
OE
NC
A9
NC
C
NC
NC
V DDQ
V SS
V SS
V SS
V SS
V SS
V DDQ
NC
I/OP1
D
NC
I/O8
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
NC
I/O7
E
NC
I/O9
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
NC
I/O6
F
NC
I/O10
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
NC
I/O5
G
NC
I/O11
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
NC
I/O4
H
Vss(1)
V DD(2)
NC
V DD
V SS
V SS
V SS
V DD
NC
NC
NC/ZZ(5)
J
I/O12
NC
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O3
NC
K
I/O13
NC
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O2
NC
L
I/O14
NC
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O1
NC
M
I/O15
NC
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
I/O0
NC
N
I/OP2
NC
V DDQ
V SS
NC
V SS
P
NC
NC
A5
A2
NC/TDI
R
LBO
NC
A4
A3
NC/TMS(3)
(3,4)
NC/TRST
(3)
V SS
V DDQ
NC
NC
A1
(3)
NC/TDO
A11
A14
A15
NC
A0
NC/TCK(3)
A12
A13
A16
A17
(1)
5282 tbl 25a
NOTES:
1. H1 and N7 do not have to be directly connected to V SS as long as the input voltage is < VIL.
2. H2 does not have to be directly connected directly to VDD as long as the input voltage is ≥ VIH.
3. A9, B9, B11, A1, R2, and P2 are reserved for future 9M, 18M, 36M, 72M, 144M, and 288M respectively.
4. These pins are NC for the "S" version and the JTAG signal listed for the "SA" version.
5. TRST is offered as an optional JTAG reset if requested in the application. If not needed, can be left floating and will internally be pulled to VDD.
6. Pin H11 supports ZZ (sleep mode) for the latest die revisions.
6.42
8
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Synchronous Truth Table (1)
CEN
R/W
CE1,
CE2(5)
ADV/LD
BWx
ADDRESS
USED
PREVIOUS CYCLE
CURRENT CYCLE
I/O
(One cycle later)
L
L
L
L
Valid
External
X
LOAD WRITE
D(7)
L
H
L
L
X
External
X
LOAD READ
Q(7)
L
X
X
H
Valid
Internal
LOAD WRITE /
BURST WRITE
BURST WRITE
(Advance burst counter)(2)
D(7)
L
X
X
H
X
Internal
LOAD READ /
BURST READ
BURST READ
(Advance burst counter)(2)
Q(7)
L
X
H
L
X
X
X
DESELECT or STOP (3)
HIZ
L
X
X
H
X
X
DESELECT / NOOP
NOOP
HIZ
H
X
X
X
X
X
(4)
X
SUSPEND
Previous Value
5282 tbl 08
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. When ADV/LD signal is sampled high, the internal burst counter is incremented. The R/W signal is ignored when the counter is advanced. Therefore the nature of
the burst cycle (Read or Write) is determined by the status of the R/W signal when the first address is loaded at the beginning of the burst cycle.
3. Deselect cycle is initiated when either (CE1, or CE2 is sampled high or CE2 is sampled low) and ADV/LD is sampled low at rising edge of clock. The data bus will
tri-state one cycle after deselect is initiated.
4. When CEN is sampled high at the rising edge of clock, that clock edge is blocked from propogating through the part. The state of all the internal registers and the I/
Os remains unchanged.
5. To select the chip requires CE1 = L, CE2 = L and CE2 = H on these chip enable pins. The chip is deselected if any one of the chip enables is false.
6. Device Outputs are ensured to be in High-Z during device power-up.
7. Q - data read from the device, D - data written to the device.
Partial Truth Table for Writes
(1)
R/W
BW1
BW2
BW3(3)
BW4(3)
READ
H
X
X
X
X
WRITE ALL BYTES
L
L
L
L
L
L
L
H
H
H
OPERATION
WRITE BYTE 1 (I/O[0:7], I/OP1)(2)
(2)
WRITE BYTE 2 (I/O[8:15], I/OP2)
L
H
L
H
H
(2,3)
WRITE BYTE 3 (I/O[16:23], I/OP3)
L
H
H
L
H
WRITE BYTE 4 (I/O[24:31], I/OP4)(2,3)
L
H
H
H
L
NO WRITE
L
H
H
H
H
5282 tbl 09
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Multiple bytes may be selected during the same cycle.
3. N/A for x18 configuration.
Interleaved Burst Sequence Table (LBO=VDD)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
0
0
1
1
1
0
Third Address
1
0
1
1
0
0
0
1
Fourth Address (1)
1
1
1
0
0
1
0
0
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
6.42
9
5282 tbl 10
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Linear Burst Sequence Table (LBO=VSS)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
1
0
1
1
0
0
Third Address
1
0
1
1
0
0
0
1
Fourth Address (1)
1
1
0
0
0
1
1
0
5282 tbl 11
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Functional Timing Diagram (1)
CYCLE
n+29
n+30
n+31
n+32
n+33
n+34
n+35
n+36
n+37
A29
A30
A31
A32
A33
A34
A35
A36
A37
C29
C30
C31
C32
C33
C34
C35
C36
C37
D/Q28
D/Q29
D/Q30
D/Q31
D/Q32
D/Q33
D/Q34
D/Q35
D/Q36
CLOCK
ADDRESS
(A0 - A16)
(2)
CONTROL(2)
(R/W, ADV/LD, BWx)
(2)
DATA
I/O [0:31], I/O P[1:4]
5282 drw 03
NOTES:
1. This assumes CEN, CE1, CE2 and CE2 are all true.
2. All Address, Control and Data_In are only required to meet set-up and hold time with respect to the rising edge of clock. Data_Out is valid after a clock-to-data
delay from the rising edge of clock.
6.42
10
,
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Device Operation - Showing Mixed Load, Burst,
Deselect and NOOP Cycles (2)
Cycle
Address
R/W
ADV/LD
CE1(1)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
D1
Load read
n+1
X
X
H
X
L
X
L
Q0
Burst read
n+2
A1
H
L
L
L
X
L
Q0+1
Load read
n+3
X
X
L
H
L
X
L
Q1
Deselect or STOP
n+4
X
X
H
X
L
X
X
Z
NOOP
n+5
A2
H
L
L
L
X
X
Z
Load read
n+6
X
X
H
X
L
X
L
Q2
Burst read
n+7
X
X
L
H
L
X
L
Q2+1
n+8
A3
L
L
L
L
L
X
Z
Load write
n+9
X
X
H
X
L
L
X
D3
Burst write
n+10
A4
L
L
L
L
L
X
D3+1
Load write
n+11
X
X
L
H
L
X
X
D4
Deselect or STOP
n+12
X
X
H
X
L
X
X
Z
NOOP
n+13
A5
L
L
L
L
L
X
Z
Load write
n+14
A6
H
L
L
L
X
X
D5
Load read
n+15
A7
L
L
L
L
L
L
Q6
Load write
n+16
X
X
H
X
L
L
X
D7
Burst write
n+17
A8
H
L
L
L
X
X
D7+1
Load read
n+18
X
X
H
X
L
X
L
Q8
Burst read
n+19
A9
L
L
L
L
L
L
Q8+1
Load write
Deselect or STOP
NOTES:
1. CE2 timing transition is identical to CE1 signal. CE2 timing transition is identical but inverted to the CE1 and CE2 signals.
2. H = High; L = Low; X = Don't Care; Z = High Impedence.
6.42
11
5282 tbl 12
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Read Operation (1)
Cycle
Address
R/W
ADV/LD
CE1(2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
X
X
X
X
L
Q0
Contents of Address A0 Read Out
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE2 timing transition is identical to CE1 signal. CE2 timing transition is identical but inverted to the CE1 and CE2 signals.
5282 tbl 13
Burst Read Operation (1)
Cycle
Address
R/W
ADV/LD
CE1(2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
H
X
L
X
L
Q0
Address A0 Read Out, Inc. Count
n+2
X
X
H
X
L
X
L
Q0+1
Address A0+1 Read Out, Inc. Count
n+3
X
X
H
X
L
X
L
Q0+2
Address A0+2 Read Out, Inc. Count
n+4
X
X
H
X
L
X
L
Q0+3
Address A0+3 Read Out, Load A1
n+5
A1
H
L
L
L
X
L
Q0
Address A0 Read Out, Inc. Count
n+6
X
X
H
X
L
X
L
Q1
Address A1 Read Out, Inc. Count
n+7
A2
H
L
L
L
X
L
Q1+1
Address A1+1 Read Out, Load A2
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE2 timing transition is identical to CE1 signal. CE2 timing transition is identical but inverted to the CE1 and CE2 signals.
5282 tbl 14
Write Operation (1)
Cycle
Address
R/W
ADV/LD
CE1(2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Address and Control meet setup
n+1
X
X
X
X
L
X
X
D0
Write to Address A0
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE2 timing transition is identical to CE1 signal. CE2 timing transition is identical but inverted to the CE1 and CE2 signals.
Burst Write Operation
5282 tbl 15
(1)
Cycle
Address
R/W
ADV/LD
CE1(2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Address and Control meet setup
n+1
X
X
H
X
L
L
X
D0
Address A0 Write, Inc. Count
n+2
X
X
H
X
L
L
X
D0+1
Address A0+1 Write, Inc. Count
n+3
X
X
H
X
L
L
X
D0+2
Address A0+2 Write, Inc. Count
n+4
X
X
H
X
L
L
X
D0+3
Address A0+3 Write, Load A1
n+5
A1
L
L
L
L
L
X
D0
Address A0 Write, Inc. Count
n+6
X
X
H
X
L
L
X
D1
Address A1 Write, Inc. Count
n+7
A2
L
L
L
L
L
X
D1+1
Address A1+1 Write, Load A2
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE2 timing transition is identical to CE1 signal. CE2 timing transition is identical but inverted to the CE1 and CE2 signals.
6.42
12
5282 tbl 16
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Read Operation with Clock Enable Used (1)
Cycle
Address
R/W
ADV/LD
CE1(2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
AddressA0 and Control meet setup
n+1
X
X
X
X
H
X
X
X
Clock n+1 Ignored
n+2
A1
H
L
L
L
X
L
Q0
Address A0 Read out, Load A1
n+3
X
X
X
X
H
X
L
Q0
Clock Ignored. Data Q0 is on the bus.
n+4
X
X
X
X
H
X
L
Q0
Clock Ignored. Data Q0 is on the bus.
n+5
A2
H
L
L
L
X
L
Q1
Address A1 Read out, Load A 2
n+6
A3
H
L
L
L
X
L
Q2
Address A2 Read out, Load A 3
n+7
A4
H
L
L
L
X
L
Q3
Address A3 Read out, Load A 4
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE2 timing transition is identical to CE1 signal. CE2 timing transition is identical but inverted to the CE1 and CE2 signals.
5282 tbl 17
Write Operation with Clock Enable Used (1)
Cycle
Address
R/W
ADV/LD
CE1(2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Address A0 and Control meet setup.
n+1
X
X
X
X
H
X
X
X
Clock n+1 Ignored.
n+2
A1
L
L
L
L
L
X
D0
Write data D0, Load A1.
n+3
X
X
X
X
H
X
X
X
Clock Ignored.
n+4
X
X
X
X
H
X
X
X
Clock Ignored.
n+5
A2
L
L
L
L
L
X
D1
Write Data D1, Load A2
n+6
A3
L
L
L
L
L
X
D2
Write Data D2, Load A3
n+7
A4
L
L
L
L
L
X
D3
Write Data D3, Load A4
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE2 timing transition is identical to CE1 signal. CE2 timing transition is identical but inverted to the CE1 and CE2 signals.
6.42
13
5282 tbl 18
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Read Operation with Chip Enable Used (1)
Cycle
Address
R/W
ADV/LD
CE1(2)
CEN
BWx
OE
I/O(3)
Comments
n
X
X
L
H
L
X
X
?
Deselected.
n+1
X
X
L
H
L
X
X
Z
Deselected.
n+2
A0
H
L
L
L
X
X
Z
Address A0 and Control meet setup.
n+3
X
X
L
H
L
X
L
Q0
Address A0 read out, Deselected.
n+4
A1
H
L
L
L
X
X
Z
Address A1 and Control meet setup.
n+5
X
X
L
H
L
X
L
Q1
Address A1 read out, Deselected.
n+6
X
X
L
H
L
X
X
Z
Deselected.
n+7
A2
H
L
L
L
X
X
Z
Address A2 and Control meet setup.
n+8
X
X
L
H
L
X
L
Q2
Address A2 read out, Deselected.
n+9
X
X
L
H
L
X
X
Z
Deselected.
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don't Know; Z = High Impedance.
2. CE2 timing transition is identical to CE1 signal. CE2 timing transition is identical but inverted to the CE1 and CE2 signals.
3. Device outputs are ensured to be in High-Z during device power-up.
5282 tbl 19
Write Operation with Chip Enable Used (1)
Cycle
Address
R/W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
X
X
L
H
L
X
X
?
Deselected.
n+1
X
X
L
H
L
X
X
Z
Deselected.
n+2
A0
L
L
L
L
L
X
Z
Address A0 and Control meet setup
n+3
X
X
L
H
L
X
X
D0
Data D0 Write In, Deselected.
n+4
A1
L
L
L
L
L
X
Z
Address A1 and Control meet setup
n+5
X
X
L
H
L
X
X
D1
Data D1 Write In, Deselected.
n+6
X
X
L
H
L
X
X
Z
Deselected.
n+7
A2
L
L
L
L
L
X
Z
Address A2 and Control meet setup
n+8
X
X
L
H
L
X
X
D2
Data D2 Write In, Deselected.
n+9
X
X
L
H
L
X
X
Z
Deselected.
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don't Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
14
5282 tbl 20
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V +/-5%)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
|ILI|
Input Leakage Current
VDD = Max., VIN = 0V to V DD
___
5
µA
|ILI|
LBO, JTAG and ZZ Input Leakage Current(1)
VDD = Max., VIN = 0V to V DD
___
30
µA
|ILO|
Output Leakage Current
VOUT = 0V to V CC
___
5
µA
VOL
Output Low Voltage
IOL = +8mA, VDD = Min.
___
0.4
V
VOH
Output High Voltage
IOH = -8mA, VDD = Min.
2.4
___
V
5282 tbl 21
NOTE:
1. The LBO, JTAG and ZZ pins will be internally pulled to VDD and ZZ will be internally pulled to VSS if it is not actively driven in the application.
DC Electrical Characterics Over the Operating
Temperature and Supply Voltage Range (1) (VDD = 3.3V +/-5%)
7.5ns
Symbol
Parameter
Test Conditions
8ns
8.5ns
Com'l Only
Com'l
Ind
Com'l
Ind
Unit
IDD
Operating Power
Supply Current
Device Selected, Outputs Open,
ADV/LD = X, VDD = Max.,
V IN > VIH or < VIL, f = fMAX(2)
275
250
260
225
235
mA
ISB1
CMOS Standby Power
Supply Current
Device Deselected, Outputs Open,
V DD = Max., VIN > VHD or < VLD,
f = 0(2,3)
40
40
45
40
45
mA
ISB2
Clock Running Power
Supply Current
Device Deselected, Outputs Open,
V DD = Max., VIN > VHD or < VLD,
f = fMAX(2,3)
105
100
110
95
105
mA
ISB3
Idle Power
Supply Current
Device Selected, Outputs Open,
CEN > VIH, VDD = Max.,
V IN > VHD or < VLD, f = fMAX(2,3)
40
40
45
40
45
mA
5282 tbl 22
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
AC Test Loads
AC Test Conditions (VDDQ = 3.3V)
VDDQ/2
Input Pulse Levels
50Ω
I/O
Z0 = 50Ω
6
,
5282 drw 04
Figure 1. AC Test Load
5
Input Rise/Fall Times
2ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Output Load
4
0 to 3V
Figure 1
5282 tbl 23
ΔtCD 3
(Typical, ns)
2
1
20 30 50
80 100
Capacitance (pF)
200
5282 drw 05
,
Figure 2. Lumped Capacitive Load, Typical Derating
6.42
15
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = 3.3V +/-5%, Commercial and Industrial Temperature Ranges)
8ns
7.5ns(5)
Symbol
Parameter
8.5ns
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tCYC
Clock Cycle Time
10
____
10.5
____
11
____
ns
tCH(1)
Clock High Pulse Width
2.5
____
2.7
____
3.0
____
ns
tCL(1)
Clock Low Pulse Width
2.5
____
2.7
____
3.0
____
ns
____
7.5
____
8
____
8.5
ns
Output Parameters
tCD
Clock High to Valid Data
tCDC
Clock High to Data Change
2
____
2
____
2
____
ns
tCLZ(2,3,4)
Clock High to Output Active
3
____
3
____
3
____
ns
tCHZ(2,3,4)
Clock High to Data High-Z
____
5
____
5
____
5
ns
tOE
Output Enable Access Time
____
5
____
5
____
5
ns
tOLZ(2,3)
Output Enable Low to Data Active
0
____
0
____
0
____
ns
tOHZ(2,3)
Output Enable High to Data High-Z
____
5
____
5
____
5
ns
Set Up Times
tSE
Clock Enable Setup Time
2.0
____
2.0
____
2.0
____
ns
tSA
Address Setup Time
2.0
____
2.0
____
2.0
____
ns
tSD
Data In Setup Time
2.0
____
2.0
____
2.0
____
ns
tSW
Read/Write (R/W) Setup Time
2.0
____
2.0
____
2.0
____
ns
tSADV
Advance/Load (ADV/LD) Setup Time
2.0
____
2.0
____
2.0
____
ns
tSC
Chip Enable/Select Setup Time
2.0
____
2.0
____
2.0
____
ns
tSB
Byte Write Enable (BWx) Setup Time
2.0
____
2.0
____
2.0
____
ns
tHE
Clock Enable Hold Time
0.5
____
0.5
____
0.5
____
ns
tHA
Address Hold Time
0.5
____
0.5
____
0.5
____
ns
tHD
Data In Hold Time
0.5
____
0.5
____
0.5
____
ns
tHW
Read/Write (R/W) Hold Time
0.5
____
0.5
____
0.5
____
ns
tHADV
Advance/Load (ADV/LD) Hold Time
0.5
____
0.5
____
0.5
____
ns
tHC
Chip Enable/Select Hold Time
0.5
____
0.5
____
0.5
____
ns
tHB
Byte Write Enable (BWx) Hold Time
0.5
____
0.5
____
0.5
____
ns
Hold Times
5282 tbl 24
NOTES:
1. Measured as HIGH above 0.6VDDQ and LOW below 0.4VDDQ.
2. Transition is measured ±200mV from steady-state.
3. These parameters are guaranteed with the AC load (Figure 1) by device characterization. They are not production tested.
4. To avoid bus contention, the output buffers are designed such that t CHZ (device turn-off) is about 1ns faster than tCLZ (device turn-on) at a given temperature and
voltage. The specs as shown do not imply bus contention because tCLZ is a Min. parameter that is worse case at totally different test conditions
(0 deg. C, 3.465V) than tCHZ, which is a Max. parameter (worse case at 70 deg. C, 3.135V).
5. Commercial temperature range only.
6.42
16
6.42
17
DATAOUT
OE
BW1 - BW4
tCLZ
A1
tHA
tHW
tHE
tSC
tCD
tHC
A2
tSA
tSW
Q(A1)
Read
tSADV
tSE
Read
Q(A2)
tCDC
tHADV
tCH
Q(A2+1)
tCD
tCL
Burst Read
Q(A2+2)
Q(A2+3)
(CEN high, eliminates
current L-H clock edge)
tCDC
Q(A2+3)
Q(A2)
(Burst Wraps around
to initial state)
tCHZ
,
NOTES:
1. Q (A1) represents the first output from the external address A1. Q (A2) represents the first output from the external address A2; Q (A2+1) represents the next output data in the burst sequence
of the base address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW.
4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address and control are
loaded into the SRAM.
CE1, CE2(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
5282 drw 06
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle (1,2,3,4)
.
6.42
18
B(A1)
Write
tHW
tHC
D(A1)
tSD
tHD
tHB
B(A2)
tSB
tSC
tHA
A2
tSA
tSW
tHE
Write
D(A2)
B(A2+1)
tHADV
tCH
tHD
D(A2+1)
tSD
B(A2+2)
tCL
(CEN high, eliminates
current L-H clock edge)
Burst Write
D(A2+2)
B(A2+3)
D(A2+3)
(Burst Wraps around
to initial state)
B(A2)
D(A2)
5282 drw 07
.
,
NOTES:
1. D (A1) represents the first input to the external address A1. D (A2) represents the first input to the external address A2; D (A2+1) represents the next input data in the burst sequence of the base
address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW.
4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address and control are
loaded into the SRAM.
5. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in one cycle before
the actual data is presented to the SRAM.
DATAIN
OE
BW1 - BW4
A1
tSADV
tSE
Timing Waveform of Write Cycles
CE1, CE2(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
(1,2,3,4,5)
6.42
19
A1
tCD
t HW
tHE
t HC
tCHZ
tHB
B(A2)
tSB
tSC
tHA
A2
t SA
tSW
Q(A1)
Read
tSADV
t SE
Write
A3
tCLZ
D(A2)
tSD tHD
tHADV
t CH
Read
Q(A3)
tCDC
B(A4)
A4
t CL
Write
D(A4)
B(A5)
A5
Write
D(A5)
A6
Read
Q(A6)
A7
Read
Q(A7)
B(A8)
A8
,
D(A8)
A9
5282 drw 08
Write
NOTES:
1. Q (A1) represents the first output from the external address A 1. D (A2) represents the input data to the SRAM corresponding to address A2.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in one cycle before
the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of Combined Read and Write Cycles (1,2,3)
.
6.42
20
tCD
tCLZ
A1
Q(A1)
tSE
tSADV
tHE
tHA
tHW
tHC
Q(A1)
tCDC
tCHZ
tHB
B(A2)
tSB
tSC
A2
tSA
tSW
tCH
tHADV
tCL
tCD
D(A2)
tSD tHD
A3
Q(A3)
tCDC
A4
,
A5
5282 drw 09
Q(A4)
NOTES:
1. Q (A1) represents the first output from the external address A 1. D (A2) represents the input data to the SRAM corresponding to address A2.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. CEN when sampled high on the rising edge of clock will block that L-H transition of the clock from propogating into the SRAM. The part will behave as if the L-H clock transition did not occur. All
internal registers in the SRAM will retain their previous state.
4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in one cycle before
the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of CEN Operation (1,2,3,4)
.
6.42
21
tCD
tCLZ
A1
tSADV
tSC
Q(A1)
tHW
tHE
tHC
tHA
A2
tSA
tSW
tSE
tCHZ
tCDC
Q(A2)
tHADV
tCH
tHB
B(A3)
tSB
A3
tCL
D(A3)
tSD tHD
A4
Q(A4)
A5
,
5282 drw 10
Q(A5)
NOTES:
1. Q (A1) represents the first output from the external address A 1. D (A3) represents the input data to the SRAM corresponding to address A3 etc.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. When either one of the Chip enables (CE1, CE2, CE2) is sampled inactive at the rising clock edge, a deselect cycle is initiated. The data-bus tri-states one cycle after the initiation of the deselect
cycle. This allows for any pending data transfers (reads or writes) to be completed.
4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in one cycle before
the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of CS Operation (1,2,3,4)
.
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
JTAG Interface Specification (SA Version only)
tJF
tJCL
tJCYC
tJR
tJCH
TCK
Device Inputs(1)/
TDI/TMS
tJS
Device Outputs(2)/
TDO
tJDC
tJH
tJRSR
tJCD
TRST(3)
x
M5282 drw 01
tJRST
NOTES:
1. Device inputs = All device inputs except TDI, TMS and TRST.
2. Device outputs = All device outputs except TDO.
3. During power up, TRST could be driven low or not be used since the JTAG circuit resets automatically. TRST is an optional JTAG reset.
JTAG AC Electrical
Characteristics(1,2,3,4)
Scan Register Sizes
Symbol
Parameter
Min.
Max.
Units
tJCYC
JTAG Clock Input Period
100
____
ns
Instruction (IR)
4
tJCH
JTAG Clock HIGH
40
____
ns
Bypass (BYR)
1
tJCL
JTAG Clock Low
40
____
ns
JTAG Identification (JIDR)
tJR
JTAG Clock Rise Time
____
(1)
5
ns
Boundary Scan (BSR)
tJF
JTAG Clock Fall Time
____
5(1)
ns
tJRST
JTAG Reset
50
____
ns
tJ RSR
JTAG Reset Recovery
50
____
ns
tJCD
JTAG Data Output
____
20
ns
tJDC
JTAG Data Output Hold
0
____
ns
tJS
JTAG Setup
25
____
ns
tJH
JTAG Hold
25
____
Register Name
Bit Size
32
Note (1)
I5282 tbl 03
NOTE:
1. The Boundary Scan Descriptive Language (BSDL) file for this device is available
by contacting your local IDT sales representative.
ns
I5282 tbl 01
NOTES:
1. Guaranteed by design.
2. AC Test Load (Fig. 1) on external output signals.
3. Refer to AC Test Conditions stated earlier in this document.
4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet.
6.42
22
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
JTAG Identification Register Definitions (SA Version only)
Instruction Field
Value
Revision Number (31:28)
Description
0x2
IDT Device ID (27:12)
0x209, 0x20B
IDT JEDEC ID (11:1)
0x33
ID Register Indicator Bit (Bit 0)
Reserved for version number.
Defines IDT part number 71V3557and 71V3559, respectively.
Allows unique identification of device vendor as IDT.
1
Indicates the presence of an ID register.
I5282 tbl 02
Available JTAG Instructions
Instruction
Description
OPCODE
(1)
EXTEST
Forces contents of the boundary scan cells onto the device outputs .
Places the boundary scan register (BSR) between TDI and TDO.
0000
SAMPLE/PRELOAD
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data from device inputs(2) and outputs(1) to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the boundary scan cells via the TDI.
0001
DEVICE_ID
Loads the JTAG ID register (JIDR) with the vendor ID code and places
the register between TDI and TDO.
0010
HIGHZ
Places the bypass register (BYR) between TDI and TDO. Forces all
device o utput drivers to a High-Z state.
0011
RESERVED
RESERVED
RESERVED
0100
Several combinations are reserved. Do not use codes other than those
identified for EXTEST, SAMPLE/PRELOAD, DEVICE_ID, HIGHZ, CLAMP,
VALIDATE and BYPASS instructions.
RESERVED
CLAMP
RESERVED
0110
0111
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the byp ass registe r (BYR) between TDI and TDO.
RESERVED
RESERVED
0101
1000
1001
1010
Same as above.
1011
RESERVED
1100
VALIDATE
Automatically loaded into the instruction register whenever the TAP
controller passes through the CAPTURE-IR state. The lower two bits '01'
are mand ated by the IEEE std. 1149.1 specification.
1101
RESERVED
Same as above.
1110
BYPASS
The BYPASS instruction is used to truncate the boundary scan register
as a single bit in length.
1111
I5282 tbl 04
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST.
6.42
23
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
100-Pin Thin Quad Plastic Flatpack (TQFP) Package Diagram Outline
6.42
24
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
119 Ball Grid Array (BGA) Package Diagram Outline
6.42
25
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
6.42
26
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of OE Operation (1)
OE
tOE
tOHZ
tOLZ
Q
DATA Out
Q
,
5282 drw 11
NOTE:
1. A read operation is assumed to be in progress.
Ordering Information
XXXX
XX
XX
XX
Device
Type
Power
Speed
Package
X
X
Process/
Temperature
Range
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
G
Restricted Hazardous Substance Device
PF**
BG
BQ
100-Pin Plastic Thin Quad Flatpack (TQFP)
119 Ball Grid Array (BGA)
165 Fine Pitch Ball Grid Array (fBGA)
75*
80
85
Access time (tCD) in tenths of nanoseconds
S
SA
Standard Power
Standard Power with JTAG Interface
,
IDT71V3557 128Kx36 Flow-Through ZBT SRAM with 3.3V I/O
IDT71V3559 256Kx18 Flow-Through ZBT SRAM with 3.3V I/O
5282 drw 12
*Commercial temperature range only.
** JTAG (SA version) is not available with 100-pin TQFP package
6.42
27
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Datasheet Document History
6/30/99
8/23/99
12/31/99
05/02/00
Pg. 5, 6
Pg. 7
Pg. 15
Pg. 21
Pg. 23
Pg. 5, 14, 15, 22
Pg. 5,6
Pg. 5,6,7
Pg. 6
Pg. 21
05/26/00
07/26/00
Pg. 23
Pg. 5-8
Pg. 8
Pg. 23
10/25/00
05/20/02
10/15/04
Pg. 8
Pg. 1-8,15,22,23,27
Pg. 7
12/07/05
02/20/09
Pg. 27
Pg. 27
Updated to new format
Added Pin 64 to Note 1 and changed Pins 38, 42, and 43 to DNU
Changed U2–U6 to DNU
Improved tCH, tCL; revised tCLZ
Added BGA package diagrams
Added Datasheet Document History
Added Industrial Temperature range offerings
Insert clarification note to Recommended OperatingTemperature and Absolute Max ratings
tables
Clarify note on TQFP and BGA pin configurations; corrected typo in pinout
Add BGA capacitance table
Add TQFP Package Diagram Outline
Add new package offering 13 x 15mm 165 fBGA
Correct 119 BGA Package Diagram Outline
Add ZZ sleep mode reference note to TQFP, BG119 and BQ165
Update BQ165 pinout
Update BG119 pinout package diagram dimensions
Remove preliminary status
Add reference note to pin N5 on BQ165 pinout, reserved for JTAG TRST
Added JTAG "SA" version functionality and updated ZZ pin descriptions and notes.
Updated pin configuration for the 119 BGA - reordered I/O signals on P6, P7 (128K x 36)
and P7, N6, L6, K7, H6, G7, F6, E7, D6 (256K x 18).
Added "Restricted hazardous substance device" to ordering information.
Removed "IDT" from orderable parts number.
CORPORATE HEADQUARTERS
6024 Silver Creek Valley Rd
San Jose, CA 95138
for SALES:
800-345-7015 or 408-284-8200
fax: 408-284-2775
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
for Tech Support:
[email protected]
408-284-4532
ZBT and ZeroBus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.
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