WINNERJOIN MMBT2907AT Pnp transistor Datasheet

RoHS
MMBT2907AT
MMBT2907AT
TRANSISTOR (PNP)
D
T
,. L
SOT-523
FEATURES
Power dissipation
1. BASE
2. EMITTER
PCM:
0.15
3. COLLECTOR
W (Tamb=25℃)
Collector current
ICM:
-0.6
A
Collector-base voltage
V(BR)CBO:
-60
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
IC
C
O
unless otherwise specified)
Symbol
Test
conditions
N
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-10µA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-10m A, IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-5
V
R
T
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
O
VCB=-50V, IE=0
-10
nA
VEB=-4V, IC=0
-10
nA
hFE(1)
VCE=-10V, IC=-100µA
75
hFE(2)
VCE=-10V, IC=-1mA
100
hFE(3)
VCE=-10V, IC=-10mA
100
hFE(4)
VCE=-10V, IC=-150mA
100
hFE(5)
VCE=-10V, IC=-500mA
50
VCE(sat)(1)
IC=-150mA, IB=-15mA
-0.4
V
VCE(sat)(2)
IC=-500mA, IB=-50mA
-1.6
V
VBE(sat)(1)
IC=-150mA, IB=-15mA
-1.3
V
VBE(sat)(2)
IC=-500mA, IB=-50mA
-2.6
V
fT
VCE=-12V, IC=-2mA, f=30MHz
Collector output capacitance
Cob
VCB=-12V, IE=0, f=1MHz
Turn-on Time
ton
C
E
L
DC current gain
Collector-emitter saturation voltage
E
Base-emitter saturation voltage
J
E
Transition frequency
W
Vcc=-30V, Ic=-150mA, IB1=-15mA
300
140
MHz
5
pF
45
ns
10
ns
Delay Time
td
Rise Time
tr
40
ns
Turn-off Time
toff
100
ns
Storage Time
ts
80
ns
Fall Time
tf
30
ns
Marking
Vcc=-6V,Ic=-150mA,IB1= IB2=-15mA
2F
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
MMBT2907AT
R
T
J
E
O
IC
C
D
T
,. L
O
N
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
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