RoHS MMBT2907AT MMBT2907AT TRANSISTOR (PNP) D T ,. L SOT-523 FEATURES Power dissipation 1. BASE 2. EMITTER PCM: 0.15 3. COLLECTOR W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter IC C O unless otherwise specified) Symbol Test conditions N MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10m A, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V R T Collector cut-off current ICBO Emitter cut-off current IEBO O VCB=-50V, IE=0 -10 nA VEB=-4V, IC=0 -10 nA hFE(1) VCE=-10V, IC=-100µA 75 hFE(2) VCE=-10V, IC=-1mA 100 hFE(3) VCE=-10V, IC=-10mA 100 hFE(4) VCE=-10V, IC=-150mA 100 hFE(5) VCE=-10V, IC=-500mA 50 VCE(sat)(1) IC=-150mA, IB=-15mA -0.4 V VCE(sat)(2) IC=-500mA, IB=-50mA -1.6 V VBE(sat)(1) IC=-150mA, IB=-15mA -1.3 V VBE(sat)(2) IC=-500mA, IB=-50mA -2.6 V fT VCE=-12V, IC=-2mA, f=30MHz Collector output capacitance Cob VCB=-12V, IE=0, f=1MHz Turn-on Time ton C E L DC current gain Collector-emitter saturation voltage E Base-emitter saturation voltage J E Transition frequency W Vcc=-30V, Ic=-150mA, IB1=-15mA 300 140 MHz 5 pF 45 ns 10 ns Delay Time td Rise Time tr 40 ns Turn-off Time toff 100 ns Storage Time ts 80 ns Fall Time tf 30 ns Marking Vcc=-6V,Ic=-150mA,IB1= IB2=-15mA 2F WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT2907AT R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]