$GYDQFHG 3RZHU 026)(7 IRF644A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 14 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V TO-220 ♦ Lower RDS(ON): 0.214Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Value Units Drain-to-Source Voltage 250 V Continuous Drain Current (TC=25°C) 14 Continuous Drain Current (TC=100°C) 8.9 IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt PD TJ , TSTG TL A 56 A ±30 V (2) 490 mJ (1) 14 A Repetitive Avalanche Energy (1) 13.9 mJ Peak Diode Recovery dv/dt (3) (1) 4.8 V/ns Total Power Dissipation (TC=25°C) 139 W Linear Derating Factor 1.11 W/°C Operating Junction and - 55 to +150 Storage Temperature Range °C Maximum Lead Temp. for Soldering 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RθJC Junction-to-Case -- 0.9 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units °C/W Rev. B ©1999 Fairchild Semiconductor Corporation 1&+$11(/ 32:(5 026)(7 IRF644A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage 250 -- -- ∆BV/∆TJ Breakdown Voltage Temp. Coeff. -- 0.28 -- 2.0 -- 4.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.28 -- IGSS IDSS RDS(on) Gate Threshold Voltage Drain-to-Source Leakage Current Static Drain-Source On-State Resistance gfs Forward Transconductance -- 8.65 Ciss Input Capacitance -- 1230 1600 Coss Output Capacitance -- 180 210 Crss Reverse Transfer Capacitance -- 80 95 td(on) Turn-On Delay Time -- 17 50 Rise Time -- 17 50 Turn-Off Delay Time -- 74 160 Fall Time -- 32 80 tr td(off) tf Qg Total Gate Charge -- 46 61 Qgs Gate-Source Charge -- 9.3 -- Qgd Gate-Drain ( Miller ) Charge -- 19.5 -- V Test Condition VGS=0V,ID=250µA V/°C ID=250µA V nA µA Ω Ω VGS(th) Min. Typ. Max. Units pF See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=250V VDS=200V,TC=125°C VGS=10V,ID=7A (4) VDS=40V,ID=7A (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=125V,ID=14A, ns RG=9.1Ω See Fig 13 (4) (5) VDS=200V,VGS=10V, nC ID=14A See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current Min. Typ. Max. Units -- -- 14 A Test Condition Integral reverse pn-diode ISM Pulsed-Source Current (1) -- -- 56 VSD Diode Forward Voltage (4) -- -- 1.5 V TJ=25°C,IS=14A,VGS=0V trr Reverse Recovery Time -- 215 -- ns TJ=25°C,IF=14A Qrr Reverse Recovery Charge -- 1.59 -- µC diF/dt=100A/µs Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=4mH, IAS=14A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 14A, di/dt ≤ 250A/µs, VDD ≤ BV DSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature in the MOSFET (4) 1&+$11(/ 32:(5 026)(7 IRF644A Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 101 ID , Drain Current [A] ID , Drain Current [A] Top : 100 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 150 oC 100 @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test 25 oC - 55 oC -1 10 101 -1 10-1 100 10 101 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage 0.6 IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 0.8 VGS = 10 V 0.4 VGS = 20 V 0.2 o @ Note : TJ = 25 C 0.0 0 15 30 45 101 100 25 oC 10-1 0.2 60 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 150 oC 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 2000 C iss 1000 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C oss 500 C rss 00 10 101 VDS , Drain-Source Voltage [V] VDS = 50 V 10 VGS , Gate-Source Voltage [V] Capacitance [pF] 1500 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VDS = 125 V VDS = 200 V 5 @ Notes : ID = 14.0 A 0 0 10 20 30 QG , Total Gate Charge [nC] 40 50 1&+$11(/ 32:(5 026)(7 IRF644A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 3.0 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -75 @ Notes : 1. VGS = 0 V 2. ID = 250 µA -50 -25 0 25 50 75 100 125 150 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 2. ID = 7.0 A 0.5 0.0 -75 175 -50 -25 TJ , Junction Temperature [oC] 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 15 10 µs 100 µs 1 ms 101 10 ms DC 0 10 @ Notes : 1. TC = 25 oC 12 9 6 3 2. TJ = 150 oC 3. Single Pulse 10-1 0 10 101 0 25 102 50 75 100 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response θ Z JC(t) , ID , Drain Current [A] 10 Operation in This Area is Limited by R DS(on) ID , Drain Current [A] 2 100 D=0.5 @ Notes : 1. Zθ J C (t)=0.9 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) 0.2 10- 1 0.1 0.05 0.02 0.01 PDM single pulse t1 t2 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 t1 , Square Wave Pulse Duration 100 [sec] 101 125 150 1&+$11(/ 32:(5 026)(7 IRF644A Fig 12. Gate Charge Test Circuit & Waveform Current Regulator VGS Same Type as DUT 50kΩ Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time 1&+$11(/ 32:(5 026)(7 IRF644A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD dv/dt controlled by RG IS controlled by Duty Factor D Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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