ON BAS20HT1G High voltage switching diode Datasheet

BAS20HT1, SBAS20HT1G
High Voltage
Switching Diode
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
200
Vdc
VRRM
200
Vdc
Continuous Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
625
mAdc
Repetitive Peak Forward Current
IFRM
500
mA
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to surge)
t = 1 ms
t = 1 ms
t=1s
IFSM
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
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HIGH VOLTAGE
SWITCHING DIODE
1
CATHODE
2
A
1
5.0
2.0
0.5
SOD−323
CASE 477
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board*
TA = 25°C
Derate above 25°C
Symbol
PD
Max
Unit
200
1.57
mW
mW/°C
Thermal Resistance Junction−to−Ambient
RqJA
635
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*FR−5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
IR
V(BR)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 6
2
ANODE
MARKING DIAGRAM
JR M G
G
JR = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
−
−
1.0
100
mAdc
250
−
Vdc
−
−
1000
1250
mV
CD
−
5.0
pF
trr
−
50
ns
1
Device
Package
Shipping†
BAS20HT1G
SOD−323
(Pb−Free)
3000 / Tape & Reel
SBAS20HT1G
SOD−323
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BAS20HT1/D
BAS20HT1, SBAS20HT1G
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
IF
t
trr
10%
t
0.1 mF
90%
D.U.T.
50 W Input
Sampling
Oscilloscope
50 W Output
Pulse
Generator
IR
VR
INPUT SIGNAL
iR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
I R, REVERSE CURRENT (m A)
100
55°C
10
125°C
1.0
25°C
150°C
−40°C
0.1
150°C
125°C
55°C
10
1.0
25°C
0.1
0.01
−40°C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
100
50
150
200
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 2. Forward Current
Figure 3. Leakage Current
2.0
C T , TOTAL CAPACITANCE (pF)
IF , FORWARD CURRENT (mA)
1000
1.8
f = 1 MHz
1.6
IE = 0 A
TA = 25°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5.0
10
15
20
25
VR, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
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2
30
35
250
300
BAS20HT1, SBAS20HT1G
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A1
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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BAS20HT1/D
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