BAS20HT1, SBAS20HT1G High Voltage Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit VR 200 Vdc VRRM 200 Vdc Continuous Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc Repetitive Peak Forward Current IFRM 500 mA Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s IFSM Continuous Reverse Voltage Repetitive Peak Reverse Voltage http://onsemi.com HIGH VOLTAGE SWITCHING DIODE 1 CATHODE 2 A 1 5.0 2.0 0.5 SOD−323 CASE 477 STYLE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board* TA = 25°C Derate above 25°C Symbol PD Max Unit 200 1.57 mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *FR−5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 mAdc) IR V(BR) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 6 2 ANODE MARKING DIAGRAM JR M G G JR = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION − − 1.0 100 mAdc 250 − Vdc − − 1000 1250 mV CD − 5.0 pF trr − 50 ns 1 Device Package Shipping† BAS20HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel SBAS20HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: BAS20HT1/D BAS20HT1, SBAS20HT1G 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp IF t trr 10% t 0.1 mF 90% D.U.T. 50 W Input Sampling Oscilloscope 50 W Output Pulse Generator IR VR INPUT SIGNAL iR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 I R, REVERSE CURRENT (m A) 100 55°C 10 125°C 1.0 25°C 150°C −40°C 0.1 150°C 125°C 55°C 10 1.0 25°C 0.1 0.01 −40°C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 50 150 200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Current Figure 3. Leakage Current 2.0 C T , TOTAL CAPACITANCE (pF) IF , FORWARD CURRENT (mA) 1000 1.8 f = 1 MHz 1.6 IE = 0 A TA = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 15 20 25 VR, REVERSE VOLTAGE (V) Figure 4. Total Capacitance http://onsemi.com 2 30 35 250 300 BAS20HT1, SBAS20HT1G PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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