MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS www.onsemi.com 30 VOLTS, 2.0 AMPERES NPN TRANSISTOR Compliant COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 1.0 A ICM 2.0 A Rating Collector Current − Continuous Collector Current − Peak 1 BASE 2 EMITTER 3 SOT−23 (TO−236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) @TA = 25°C Derate above 25°C Symbol Max Unit 2 PD RqJA 1 310 2.5 mW mW/°C 403 °C/W 710 5.7 mW mW/°C MARKING DIAGRAM N3 M G G PD Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 176 °C/W Total Device Dissipation (Single Pulse < 10 s) PDsingle 575 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ Minimum Pad 2. FR− 4 @ 1.0 X 1.0 inch Pad 1 N3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT489LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2001 October, 2016 − Rev. 6 1 Publication Order Number: MMBT489LT1/D MMBT489LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 30 − 50 − 5.0 − − 0.1 − 0.1 − 0.1 300 300 200 − 900 − − − − 0.200 0.125 0.075 − 1.1 − 1.1 100 − − 15 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector− Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = 30 Vdc) ICES Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 50 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 mA, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz V V V fT Output Capacitance (f = 1.0 MHz) MHz Cobo pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% 1.0 1.0 0.9 0.8 0.7 0.8 0.7 IC = 1 A 0.6 VCE (V) VCE (V) 0.9 IC = 2 A 0.5 0.4 0.3 0 0.5 Ic/Ib = 100 0.4 0.3 IC = 500 mA 0.2 0.1 0.6 0.1 IC = 100 mA 0.001 Ic/Ib = 10 0.2 0.01 Ib (A) 0.1 0 0.2 0.001 0.01 0.1 Ic (A) Figure 1. VCE versus Ib Figure 2. VCE versus Ic www.onsemi.com 2 1 2 MMBT489LT1G 800 1.2 VCE = 5 V 700 VCE = 5 V +125°C 1.0 600 400 300 −55°C 0.8 +25°C VBE(on) (V) hFE 500 −55°C +25°C 0.6 0.4 +125°C 200 0.2 100 0 0.001 0.01 0.1 1 0 2 0.001 0.01 Ic (A) Figure 3. hFE versus Ic 1 IC COLLECTOR CURRENT (A) 10 1.0 Ic/Ib = 10 0.8 Ic/Ib = 100 0.6 0.4 0.2 1 1 ms 10 ms 100 ms 0.1 1s SINGLE PULSE Tamb = 25°C 0 2 Figure 4. VBE(on) versus Ic 1.2 VBE (V) 0.1 Ic (A) 0.001 0.01 0.1 1 0.01 2 0.1 1 Ic (A) 0.2 100 VCE (V) Figure 5. VBE(sat) versus Ic 0.5 dc 10 Figure 6. Safe Operating Area 0.1 1.0E+00 0.05 0.02 D = 0.01 Rthja , (t) 1.0E-01 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 7. Normalized Thermal Response www.onsemi.com 3 10 100 1000 MMBT489LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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