ON MMBT489LT1G High current surface mount npn silicon switching transistor Datasheet

MMBT489LT1G
High Current Surface Mount
NPN Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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30 VOLTS, 2.0 AMPERES
NPN TRANSISTOR
Compliant
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
A
ICM
2.0
A
Rating
Collector Current − Continuous
Collector Current − Peak
1
BASE
2
EMITTER
3
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
@TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation (Note 2)
@TA = 25°C
Derate above 25°C
Symbol
Max
Unit
2
PD
RqJA
1
310
2.5
mW
mW/°C
403
°C/W
710
5.7
mW
mW/°C
MARKING DIAGRAM
N3 M G
G
PD
Thermal Resistance, Junction−to−Ambient
(Note 2)
RqJA
176
°C/W
Total Device Dissipation (Single Pulse < 10 s)
PDsingle
575
mW
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ Minimum Pad
2. FR− 4 @ 1.0 X 1.0 inch Pad
1
N3 = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT489LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2001
October, 2016 − Rev. 6
1
Publication Order Number:
MMBT489LT1/D
MMBT489LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
30
−
50
−
5.0
−
−
0.1
−
0.1
−
0.1
300
300
200
−
900
−
−
−
−
0.200
0.125
0.075
−
1.1
−
1.1
100
−
−
15
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector− Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = 30 Vdc)
ICES
Emitter Cutoff Current
(VEB = 4.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = 50 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.1 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 mA, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz
V
V
V
fT
Output Capacitance
(f = 1.0 MHz)
MHz
Cobo
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
1.0
1.0
0.9
0.8
0.7
0.8
0.7
IC = 1 A
0.6
VCE (V)
VCE (V)
0.9
IC = 2 A
0.5
0.4
0.3
0
0.5
Ic/Ib = 100
0.4
0.3
IC = 500 mA
0.2
0.1
0.6
0.1
IC = 100 mA
0.001
Ic/Ib = 10
0.2
0.01
Ib (A)
0.1
0
0.2
0.001
0.01
0.1
Ic (A)
Figure 1. VCE versus Ib
Figure 2. VCE versus Ic
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2
1
2
MMBT489LT1G
800
1.2
VCE = 5 V
700
VCE = 5 V
+125°C
1.0
600
400
300
−55°C
0.8
+25°C
VBE(on) (V)
hFE
500
−55°C
+25°C
0.6
0.4
+125°C
200
0.2
100
0
0.001
0.01
0.1
1
0
2
0.001
0.01
Ic (A)
Figure 3. hFE versus Ic
1
IC COLLECTOR CURRENT (A)
10
1.0
Ic/Ib = 10
0.8
Ic/Ib = 100
0.6
0.4
0.2
1
1 ms
10 ms
100 ms
0.1
1s
SINGLE PULSE Tamb = 25°C
0
2
Figure 4. VBE(on) versus Ic
1.2
VBE (V)
0.1
Ic (A)
0.001
0.01
0.1
1
0.01
2
0.1
1
Ic (A)
0.2
100
VCE (V)
Figure 5. VBE(sat) versus Ic
0.5
dc
10
Figure 6. Safe Operating Area
0.1
1.0E+00
0.05
0.02
D = 0.01
Rthja , (t)
1.0E-01
1.0E-02
r(t)
1.0E-03
1E-05
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 7. Normalized Thermal Response
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3
10
100
1000
MMBT489LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT489LT1/D
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