Fujitsu MB15E03SLPFV1 Single serial input pll frequency synthesizer on-chip 1.2 ghz prescaler Datasheet

FUJITSU SEMICONDUCTOR
DATA SHEET
DS04-21359-4E
ASSP
Single Serial Input
PLL Frequency Synthesizer
On-chip 1.2 GHz Prescaler
MB15E03SL
■ DESCRIPTION
The Fujitsu MB15E03SL is a serial input Phase Locked Loop (PLL) frequency synthesizer with a 1.2 GHz prescaler.
The 1.2 GHz prescaler has a dual modulus division ratio of 64/65 or 128/129 enabling pulse swallowing operation.
The supply voltage range is between 2.4 V and 3.6 V. The MB15E03SL uses the latest BiCMOS process, as a result,
the supply current is typically 2.0 mA at 2.7 V. A refined charge pump supplies a well balanced output currents of
1.5 mA or 6 mA. The charge pump current is selectable by serial data.
MB15E03SL is ideally suited for wireless mobile communications, such as GSM.
■ FEATURES
• High frequency operation: 1.2 GHz max
• Low power supply voltage: VCC = 2.4 V to 3.6 V
• Ultra Low power supply current: ICC = 2.0 mA typ. (VCC = Vp = 2.7 V, Ta = +25°C, in locking state)
ICC = 2.5 mA typ. (VCC = Vp = 3 V, Ta = +25°C, in locking state)
• Direct power saving function: Power supply current in power saving mode
Typ. 0.1 µA (VCC = Vp = 3 V, Ta = +25°C), Max. 10 µA (VCC = Vp = 3 V)
• Dual modulus prescaler: 64/65 or 128/129
• Serial input 14-bit programmable reference divider: R = 3 to 16,383
• Serial input programmable divider consisting of:
- Binary 7-bit swallow counter: 0 to 127
- Binary 11-bit programmable counter: 3 to 2,047
• Selectable charge pump current
• On-chip phase control for phase comparator
• Operating temperature: Ta = –40 to +85°C
• Pin compatible with MB15E03, MB15E03L
■ PACKAGES
16-pin plastic SSOP
(FPT-16P-M05)
16-pad plastic BCC
(LCC-16P-M06)
MB15E03SL
■ PIN ASSIGNMENTS
16-pad BCC
16-pin SSOP
OSCIN
1
16
φR
OSCOUT
2
15
φP
VP
3
14
LD/fout
VCC
4
DO
5
TOP 13
VIEW 12
GND
6
Xfin
fin
OSCOUT
1
VP
2
ZC
VCC
PS
DO
3
4
11
LE
GND
5
7
10
Data
Xfin
6
8
9
Clock
(FPT-16P-M05)
2
OSCIN φR
16 15
TOP
VIEW
7
14
13
12
11
10
8
9
fin Clock
(LCC-16P-M06)
φP
LD/fout
ZC
PS
LE
Data
MB15E03SL
■ PIN DESCRIPTION
Pin No.
SSOP-16 BCC-16
Pin
Name
I/O
Descriptions
1
16
OSCIN
I
Programmable reference divider input.
Oscillator input connection to a TCXO.
2
1
OSCOUT
O
Oscillator output.
3
2
VP
—
Power supply voltage input for the charge pump.
4
3
VCC
—
Power supply voltage input.
5
4
DO
O
Charge pump output.
Phase of the charge pump can be selected via programming of the FC bit.
6
5
GND
—
Ground.
7
6
Xfin
I
Prescaler complementary input which should be grounded via a
capacitor.
8
7
fin
I
Prescaler input.
Connection to an external VCO should be done via AC coupling.
9
8
Clock
I
Clock input for the 19-bit shift register.
Data is shifted into the shift register on the rising edge of the clock.
(Open is prohibited.)
10
9
Data
I
Serial data input using binary code.
The last bit of the data is a control bit. (Open is prohibited.)
11
10
LE
I
Load enable signal input. (Open is prohibited.)
When LE is set high, the data in the shift register is transferred to a latch
according to the control bit in the serial data.
I
Power saving mode control. This pin must be set at “L” at Power-ON.
(Open is prohibited.)
PS = “H”; Normal mode
PS = “L”; Power saving mode
12
11
PS
13
12
ZC
I
Forced high-impedance control for the charge pump (with internal pull up
resistor.)
ZC = “H”; Normal Do output.
ZC = “L”; Do becomes high impedance.
14
13
LD/fout
O
Lock detect signal output (LD)/phase comparator monitoring output (fout).
The output signal is selected via programming of the LDS bit.
LDS = “H”; outputs fout (fr/fp monitoring output)
LDS = “L”; outputs LD (“H” at locking, “L” at unlocking.)
15
14
φP
O
Phase comparator N-channel open drain output for an external charge
pump. Phase can be selected via programming of the FC bit.
16
15
φR
O
Phase comparator CMOS output for an external charge pump. Phase can
be selected via programming of the FC bit.
3
MB15E03SL
■ BLOCK DIAGRAM
fr
(16)
OSCIN 1
Reference
oscillator
circuit
Phase
comparator
(14)
15 φP
(1)
OSCOUT 2
Binary 14-bit
reference
counter
(2)
VP 3
14-bit latch
Lock
detector
SW FC LDS CS
4-bit latch
fp
C
N
T
(3)
4
(4)
DO 5
Current switch
Charge pump
VCC
(15)
16 φR
LD/fr/fp
selector
19-bit shift register
7-bit latch
Binary 7-bit
swallow
counter
(12)
13 ZC
11-bit latch
Binary 11-bit
programmable
counter
(13)
14 LD/fout
Intermittent mode
control
(power save)
(11)
12 PS
(10)
11 LE
(5)
GND 6
1-bit
cotrol
latch
(6)
Xfin 7
MD
(9)
10 Data
Prescaler
64 / 65,
128 / 129
(7)
fin 8
: SSOP
( ): BCC
4
(8)
9 Clock
MB15E03SL
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Power supply voltage
Input voltage
Output voltage
Storage temperature
Symbol
Condition
VCC
Rating
Unit
Min.
Max.
—
–0.5
4.0
V
VP
—
VCC
6.0
V
VI
—
–0.5
VCC +0.5
V
VO
Except Do
GND
VCC
V
VO
Do
GND
VP
V
Tstg
—
–55
+125
°C
Remark
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Value
Unit
Min.
Typ.
Max.
VCC
2.4
3.0
3.6
V
VP
VCC
—
5.5
V
Input voltage
VI
GND
—
VCC
V
Operating temperature
Ta
–40
—
+85
°C
Power supply voltage
Remark
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
5
MB15E03SL
■ ELECTRICAL CHARACTERISTICS
(VCC = 2.4 to 3.6 V, Ta = –40 to +85°C)
Parameter
Symbol
Condition
Value
Min.
Typ.
Max.
Unit
Power supply current*1
ICC
VCC = VP = 2.7 V
(VCC = VP = 3.0 V)
—
2.0
(2.5)
—
mA
Power saving current
IPS
ZC = “H” or open
—
0.1*2
10
µA
fin
fin
—
100
—
1200
MHz
OSCIN
fOSC
—
3
—
40
MHz
fin*3
Pfin
–15
—
+2
dBm
OSCIN*3
VOSC
—
0.5
—
VCC
Vp-p
Data,
Clock,
LE, PS,
ZC
VIH
—
VCC × 0.7
—
—
VIL
—
—
—
VCC × 0.3
Data,
Clock,
LE, PS
IIH*4
—
–1.0
—
+1.0
IIL*4
—
–1.0
—
+1.0
IIH
—
0
—
+100
I
IL*4
—
–100
—
0
IIH*4
—
–1.0
—
+1.0
–100
—
0
—
—
0.4
VCC – 0.4
—
—
—
—
0.4
VP – 0.4
—
—
Operating frequency
Input sensitivity
“H” level input voltage
“L” level input voltage
“H” level input current
“L” level input current
“H” level input current
“L” level input current
“H” level input current
“L” level input current
OSCIN
ZC
I
IL*4
50 Ω system
(Refer to the Measurment
circuit.)
Pull up input
V
µA
µA
µA
“L” level output voltage φP
VOL
Open drain output
“H” level output voltage φR,
“L” level output voltage LD/fout
VOH
VCC = VP = 3 V, IOH = –1 mA
VOL
VCC = VP = 3 V, IOL = 1 mA
“H” level output voltage
VDOH
VCC = VP = 3 V, IDOH = –0.5 mA
VDOL
VCC = VP = 3 V, IDOL = 0.5 mA
—
—
0.4
High impedance cutoff Do
current
IOFF
VCC = VP = 3 V,
VOFF = 0.5 V to VP – 0.5 V
—
—
2.5
nA
“L” level output current φP
IOL
Open drain output
1.0
—
—
mA
“H” level output current φR,
“L” level output current LD/fout
IOH
—
—
—
–1.0
IOL
—
1.0
—
—
CS bit = “H”
—
–6.0
—
CS bit = “L”
—
–1.5
—
CS bit = “H”
—
6.0
—
CS bit = “L”
—
1.5
—
—
3
—
%
—
10
—
%
—
10
—
%
“L” level output voltage
Do
“H” level output current
IDOH*4
Do
“L” level output current
IDOL
VCC = 3 V,
VP = 3 V,
VDO = VP/2
Ta = +25°C
IDOL/IDOH IDOMT*5 VDD = VP/2
Charge pump current
rate
vs VDO
IDOVD*6 0.5 V ≤ VDO ≤ VP – 0.5 V
vs Ta
IDOTA*7
– 40°C ≤ Ta ≤ +85°C
V
V
V
mA
mA
(Continued)
6
MB15E03SL
(Continued)
*1: Conditions; fin = 1200 MHz, fosc = 12 MHz, Ta = +25°C, in locking state.
*2: VCC = VP = 3.0 V, fosc = 12.8 MHz, Ta = +25°C, in power saving mode
*3: AC coupling. 1000 pF capacitor is connected under the condition of min. operating frequency.
*4: The symbol “–” (minus) means direction of current flow.
*5: VCC = VP = 3.0 V, Ta = +25°C (|I3| – |I4|) / [(|I3| + |I4|) /2] × 100(%)
*6: VCC = VP = 3.0 V, Ta = +25°C [(|I2| – |I1|) /2] / [(|I1| + |I2|) /2] × 100(%) (Applied to each IDOL, IDOH)
*7: VCC = VP = 3.0 V, VDO = VP/2 (|IDO(+85°C) – IDO(–40°C)| /2) / (|IDO(+85°C) + IDO(–40°C)| /2) × 100(%) (Applied to each
IDOL, IDOH)
I1
I3
I2
IDOL
IDOH
I4
I2
I1
0.5
VP/2
VP − 0.5
VP
Charge Pump Output Voltage (V)
7
MB15E03SL
■ FUNCTIONAL DESCRIPTION
1. Pulse Swallow Function
The divide ratio can be calculated using the following equation:
fVCO = [(M × N) + A] × fOSC ÷ R (A < N)
fVCO : Output frequency of external voltage controlled oscillator (VCO)
N
: Preset divide ratio of binary 11-bit programmable counter (3 to 2,047)
A
: Preset divide ratio of binary 7-bit swallow counter (0 ≤ A ≤ 127)
fOSC : Output frequency of the reference frequency oscillator
R
: Preset divide ratio of binary 14-bit programmable reference counter (3 to 16,383)
M
: Preset divide ratio of the dual modulus prescaler (64 or 128)
2. Serial Data Input
Serial data is processed using the Data, Clock, and LE pins. Serial data controls the programmable reference divider
and the programmable divider separately.
Binary serial data is entered through the Data pin.
One bit of data is shifted into the shift register on the rising edge of the Clock. When the LE pin is taken high, stored
data is latched according to the control bit data as follows:
Table 1. Control Bit
Control Bit (CNT)
Destination of Serial Data
H
For the programmable reference divider
L
For the programmable divider
(1) Shift Register Configuration
Programmable Reference Counter
MSB
LSB
Data Flow
1
2
CNT R1
CNT
R1 to R14
SW
FC
LDS
CS
3
4
5
6
7
8
9
R2
R3
R4
R5
R6
R7
R8
11
12
13
14
15
16
R9 R10 R11 R12 R13 R14 SW
: Control bit
: Divide ratio setting bit for the programmable reference counter (3 to 16,383)
: Divide ratio setting bit for the prescaler (64/65 or 128/129)
: Phase control bit for the phase comparator
: LD/fout signal select bit
: Charge pump current select bit
Note: Start data input with MSB first.
8
10
17
18
19
FC LDS CS
[Table 1]
[Table 2]
[Table 5]
[Table 8]
[Table 7]
[Table 6]
MB15E03SL
Programmable Counter
MSB
LSB
Data Flow
1
2
CNT A1
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
A2
A3
A4
A5
A6
A7
N1
N2
N3
N4
N5
N6
N7
N8
N9 N10 N11
CNT
: Control bit
N1 to N11: Divide ratio setting bits for the programmable counter (3 to 2,047)
A1 to A7 : Divide ratio setting bits for the swallow counter (0 to 127)
18
19
[Table 1]
[Table 3]
[Table 4]
Note: Start data input with MSB first.
Table 2. Binary 14-bit Programmable Reference Counter Data Setting
Divide ratio
(R)
R14
R13
R12
R11
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
3
0
0
0
0
0
0
0
0
0
0
0
0
1
1
4
0
0
0
0
0
0
0
0
0
0
0
1
0
0
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
16383
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Note: Divide ratio less than 3 is prohibited.
Table 3. Binary 11-bit Programmable Counter Data Setting
Divide ratio
(N)
N11
N10
N9
N8
N7
N6
N5
N4
N3
N2
N1
3
0
0
0
0
0
0
0
0
0
1
1
4
0
0
0
0
0
0
0
0
1
0
0
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
2047
1
1
1
1
1
1
1
1
1
1
1
Note: Divide ratio less than 3 is prohibited.
9
MB15E03SL
Table 4. Binary 7-bit Swallow Counter Data Setting
Divide ratio
(A)
A7
A6
A5
A4
A3
A2
A1
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
⋅
⋅
⋅
⋅
⋅
⋅
⋅
⋅
127
1
1
1
1
1
1
1
Table 5. Prescaler Data Setting
SW
Prescaler Divide Ratio
H
64/65
L
128/129
Table 6. Charge Pump Current Setting
CS
Current Value
H
±6.0 mA
L
±1.5 mA
Table 7. LD/fout Output Select Data Setting
LD/fOUT Output Signal
LDS
H
fout signal
L
LD signal
(2) Relation between the FC Input and Phase Characteristics
The FC bit changes the phase characteristics of the phase comparator. Both the internal charge pump output level
(DO) and the phase comparator output (φR, φP) are reversed according to the FC bit. Also, the monitor pin (fout)
output is controlled by the FC bit. The relationship between the FC bit and each of DO, φR, and φP is shown below.
Table 8. FC Bit Data Setting (LDS = “H”)
FC = High
DO
φR
φP
fr > fp
H
L
L
fr < fp
L
H
Z*
fr = fp
Z*
L
Z*
* : High impedance
10
FC = Low
LD/fout
fout = fr
DO
φR
φP
L
H
Z*
H
L
L
Z*
L
Z*
LD/fout
fout = fp
MB15E03SL
When designing a synthesizer, the FC pin setting depends on the VCO and LPF characteristics.
• When the LPF and VCO characteristics are
similar to (1), set FC bit high.
• When the VCO characteristics are similar to (2),
set FC bit low.
PLL
LPF
VCO
(1)
VCO
Output
Frequency
(2)
LPF Output Voltage
3. Do Output Control
Table 9. ZC Pin Setting
ZC pin
Do output
H
Normal output
L
High impedance
11
MB15E03SL
4. Power Saving Mode (Intermittent Mode Control Circuit)
Table 10. PS Pin Setting
PS pin
Status
H
Normal mode
L
Power saving mode
The intermittent mode control circuit reduces the PLL power consumption.
By setting the PS pin low, the device enters into the power saving mode, reducing the current consumption. See
the Electrical Characteristics chart for the specific value.
The phase detector output, Do, becomes high impedance.
For the signal PLL, the lock detector, LD, remains high, indicating a locked condition.
Setting the PS pin high, releases the power saving mode, and the device works normally.
The intermittent mode control circuit also ensures a smooth startup when the device returns to normal operation.
When the PLL is returned to normal operation, the phase comparator output signal is unpredictable. This is because
of the unknown relationship between the comparison frequency (fp) and the reference frequency (fr) which can
cause a major change in the comparator output, resulting in a VCO frequency jump and an increase in lockup time.
To prevent a major VCO frequency jump, the intermittent mode control circuit limits the magnitude of the error
signal from the phase detector when it returns to normal operation.
Notes: •When power (VCC) is first applied, the device must be in standby mode, PS = Low, for at least 1 µs.
•PS pin must be set “L” for Power-ON.
OFF
VCC
ON
tV ≥ 1 µs
Clock
Data
LE
tPS ≥ 100 ns
PS
(1)
(2)
(3)
(1) PS = L (power saving mode) at Power ON
(2) Set serial data 1 µs later after power supply remains stable (VCC > 2.2 V).
(3) Release power saving mode (PS: “L” → “H”) 100 ns later after setting serial data.
12
MB15E03SL
■ SERIAL DATA INPUT TIMING
1st data
2nd data
Control bit
Invalid data
∼
Data
MSB
LSB
∼
∼
Clock
t1
t2
t3
t6
t7
LE
∼
t4
t5
On the rising edge of the clock, one bit of data is transferred into the shift register.
Parameter
Min.
Typ.
Max.
Unit
Parameter
Min.
Typ.
Max.
Unit
t1
20
—
—
ns
t5
100
—
—
ns
t2
20
—
—
ns
t6
20
—
—
ns
t3
30
—
—
ns
t7
100
—
—
ns
t4
30
—
—
ns
Note: LE should be “L” when the data is transferred into the shift register.
13
MB15E03SL
■ PHASE COMPARATOR OUTPUT WAVEFORM
fr
fp
t WU
t WL
LD
[FC = “H”]
H
DO
Z
L
[FC = “L”]
H
DO
Z
L
Notes:• Phase error detection range: –2π to +2π
• Pulses on Do output signal during locked state are output to prevent dead zone.
• LD output becomes low when phase is tWU or more. LD output becomes high when phase error is tWL
or less and continues to be so for three cycles or more.
• tWU and tWL depend on OSCIN input frequency.
tWU > 2/fosc (s) (e. g. tWU > 156.3 ns, fosc = 12.8 MHz)
tWU < 4/fosc (s) (e. g. tWL < 312.5 ns, fosc = 12.8 MHz)
• LD becomes high during the power saving mode (PS = “L”).
14
MB15E03SL
■ MEASURMENT CIRCUIT (for Measuring Input Sensitivity fin/OSCIN)
1000 pF
0.1 µF
1000 pF
0.1 µF
1000 pF
S.G.
S.G.
50 Ω
fin
Xfin GND
DO
VCC
VP OSCOUT OSCIN
8
7
6
5
4
3
2
1
9
10
11
12
13
14
15
16
Clock Data LE
PS
ZC LD/fout φP
φR
VCC
Controller
(setting divide ratio)
50 Ω
Oscilloscope
Note: 16-pin SSOP
15
MB15E03SL
■ TYPICAL CHARACTERISTICS
1. fin input sensitivity
Input sensitivity − Input frequency (Prescaler 64/65)
Input sensitivity Pfin (dBm)
Ta = +25 °C
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
10
0
SPEC
−10
−20
VCC = 2.4 V
−30
VCC = 2.7 V
VCC = 3.0 V
−40
VCC = 3.6 V
−50
0
500
1000
1500
2000
Input frequency fin (MHz)
2. OSCIN input sensitivity
Input sensitivity − Input frequency
Input sensitivity VOSC (dBm)
10
,,,,,
,,,,,
Ta = +25 °C
SPEC
0
−10
−20
−30
VCC = 2.4 V
−40
VCC = 3.0 V
−50
VCC = 3.6 V
−60
0
50
Input frequency fOSC (MHz)
16
100
MB15E03SL
3. Do output current
1.5 mA mode
VDO − IDO
Ta = +25 °C
Charge pump output current IDO (mA)
10.00
VCC = 3.0 V
VP = 3.0 V
2.000
/div
IOL
0
IOH
− 10.00
0
4.800
.6000/div
Charge pump output voltage VDO (V)
6.0 mA mode
VDO − IDO
Ta = +25 °C
Charge pump output current IDO (mA)
10.00
VCC = 3.0 V
VP = 3.0 V
IOL
2.000
/div
0
IOH
− 10.00
0
.6000/div
4.800
Charge pump output voltage VDO (V)
17
MB15E03SL
4. fin input impedance
1 : 297.63 Ω
−656.53 Ω
100 MHz
2 : 24.523 Ω
−185.55 Ω
400 MHz
3 : 9.3789 Ω
−77.168 Ω
800 MHz
4 : 10.188 Ω
−33.143 Ω
1.2 GHz
1
2
4
3
START 100.000 000 MHz
STOP 1 200.000 000 MHz
5. OSCIN input impedance
1:
9.063 kΩ
−3.113 kΩ
3 MHz
2:
3.8225 Ω
−4.6557 kΩ
10 MHz
3:
1.5735 Ω
−3.2154 kΩ
20 MHz
1
3
3 4:
405.69 Ω
−1.8251 kΩ
40 MHz
4
START 3.000 000 MHz
18
STOP 40.000 000 MHz
MB15E03SL
■ REFERENCE INFORMATION
S.G.
OSCIN
LPF
DO
fin
Spectrum
Analyzer
VCO
fVCO = 810.425 MHz
KV = 17 MHz/V
fr = 25 kHz
fOSC = 14.4 MHz
exp current: 6.0 mA
• LPF
9.1 kΩ
Do
VCO
4.2 kΩ
4700 pF
1500 pF
47000 pF
(Continued)
19
MB15E03SL
• PLL Reference Leakage
ATTEN 10 dB
RL − 5.0 dBm
∆MKR − 79.83 dB
25.0 kHz
79.8 dBc
Ta = +25°C
CENTER 810.42500 MHz
1.0 kHz
VBW 1.0 kHz
* RBW
SPAN 200.0 kHz
1.00 s
* SWP
• PLL Phase Noise
ATTEN 10 dB
RL − 5.0 dBm
∆MKR − 53.00 dB
2.23 kHz
73.0 dBc/Hz
Ta = +25°C
CENTER 810.42500 MHz
100 Hz
VBW 100 Hz
* RBW
SPAN 20.00 kHz
3.00 s
* SWP
(Continued)
20
MB15E03SL
(Continued)
PLL Lock Up Time
PLL Lock Up Time
810.425 MHz → 826.425±1 kHz
Lch → Hch 1.40 ms
826.425 MHz → 810.425±1 kHz
Hch → Lch 1.52 ms
850.00500
MHz
860.00000
MHz
10.00000
Hz/div
10.00000
Hz/div
810.00000
MHz
810.00000
MHz
5.0000000 ms
5.0000000 ms
830.00500
MHz
830.00500
MHz
2.00
KHz/div
2.00
KHz/div
829.99500
MHz
829.99500
MHz
5.0000000 ms
5.0000000 ms
21
MB15E03SL
■ APPLICATION EXAMPLE
VP
10 kΩ
Output
VCO
LPF
12 kΩ
12 kΩ
10 kΩ
Lock detect.
From
a controller
φR
φP
LD/fout
ZC
PS
LE
Data
Clock
16
15
14
13
12
11
10
9
MB15E03SL
1
2
3
4
5
6
7
8
OSCIN
OSCOUT
VP
VCC
DO
GND
Xfin
fin
1000 pF
1000 pF
1000 pF
0.1 µF
0.1 µF
TCXO
VP:
5.5 V Max
Notes:• SSOP-16
• In case of using a crystal resonator, it is necessary to optimize matching between the crystal and this LSI,
and perform detailed system evaluation. It is recommended to consult with a supplier of the crystal
resonator. (Reference oscillator circuit provides its own bias, feedback resistor is 100 kΩ (typ).)
22
MB15E03SL
■ USAGE PRECAUTIONS
To protect against damage by electrostatic discharge, note the following handling precautions:
-Store and transport devices in conductive containers.
-Use properly grounded workstations, tools, and equipment.
-Turn off power before inserting device into or removing device from a socket.
-Protect leads with a conductive sheet when transporting a board-mounted device.
■ ORDERING INFORMATION
Part number
Package
MB15E03SLPFV1
16-pin, Plastic SSOP
(FPT-16P-M05)
MB15E03SLPV1
16-pad, Plastic BCC
(LCC-16P-M06)
Remarks
23
MB15E03SL
■ PACKAGE DIMENSIONS
16-pin, Plastic SSOP
(FPT-16P-M05)
Note 1) * : These dimensions do not include resin protrusion.
Note 2) Pins width and pins thickness include plating thickness.
* 5.00±0.10(.197±.004)
16
0.17±0.03
(.007±.001)
9
* 4.40±0.10
6.40±0.20
(.173±.004) (.252±.008)
INDEX
Details of "A" part
+0.20
1.25 –0.10
+.008
.049 –.004
LEAD No.
1
8
0.65(.026)
0.10(.004)
C
(Mounting height)
1999 FUJITSU LIMITED F16013S-3C-5
"A"
0.24±0.08
(.009±.003)
0.13(.005)
M
0~8°
0.50±0.20
(.020±.008)
0.45/0.75
(.018/.030)
0.10±0.10
(Stand off)
(.004±.004)
0.25(.010)
Dimensions in mm (inches)
(Continued)
24
MB15E03SL
(Continued)
16-pad, Plastic BCC
(LCC-16P-M06)
4.55±0.10
(.179±.004)
0.80(.031)MAX
Mounting height
14
3.40(.134)TYP
0.65(.026)
TYP
0.40±0.10
(.016±.004)
9
0.325±0.10
(.013±.004)
9
14
0.80(.031)
REF
INDEX AREA
3.40±0.10
(.134±.004)
2.45(.096)
TYP
"A"
1
6
0.075±0.025
(.003±.001)
(Stand off)
6
Details of "A" part
0.75±0.10
(.030±.004)
1.15(.045)
REF
"B"
1.725(.068)
REF
1
Details of "B" part
0.60±0.10
(.024±.004)
0.05(.002)
0.40±0.10
(.016±.004)
C
1999 FUJITSU LIMITED C16017S-1C-1
0.60±0.10
(.024±.004)
Dimensions in mm (inches)
25
MB15E03SL
FUJITSU LIMITED
For further information please contact:
Japan
FUJITSU LIMITED
Corporate Global Business Support Division
Electronic Devices
KAWASAKI PLANT, 4-1-1, Kamikodanaka,
Nakahara-ku, Kawasaki-shi,
Kanagawa 211-8588, Japan
Tel: +81-44-754-3763
Fax: +81-44-754-3329
http://www.fujitsu.co.jp/
North and South America
FUJITSU MICROELECTRONICS, INC.
3545 North First Street,
San Jose, CA 95134-1804, USA
Tel: +1-408-922-9000
Fax: +1-408-922-9179
Customer Response Center
Mon. - Fri.: 7 am - 5 pm (PST)
Tel: +1-800-866-8608
Fax: +1-408-922-9179
http://www.fujitsumicro.com/
Europe
FUJITSU MICROELECTRONICS EUROPE GmbH
Am Siebenstein 6-10,
D-63303 Dreieich-Buchschlag,
Germany
Tel: +49-6103-690-0
Fax: +49-6103-690-122
http://www.fujitsu-fme.com/
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE LTD
#05-08, 151 Lorong Chuan,
New Tech Park,
Singapore 556741
Tel: +65-281-0770
Fax: +65-281-0220
http://www.fmap.com.sg/
F0002
 FUJITSU LIMITED Printed in Japan
All Rights Reserved.
The contents of this document are subject to change without
notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information and circuit diagrams in this document are
presented as examples of semiconductor device applications,
and are not intended to be incorporated in devices for actual use.
Also, FUJITSU is unable to assume responsibility for
infringement of any patent rights or other rights of third parties
arising from the use of this information or circuit diagrams.
The contents of this document may not be reproduced or copied
without the permission of FUJITSU LIMITED.
FUJITSU semiconductor devices are intended for use in
standard applications (computers, office automation and other
office equipments, industrial, communications, and
measurement equipments, personal or household devices, etc.).
CAUTION:
Customers considering the use of our products in special
applications where failure or abnormal operation may directly
affect human lives or cause physical injury or property damage,
or where extremely high levels of reliability are demanded
(such as aerospace systems, atomic energy controls, sea floor
repeaters, vehicle operating controls, medical devices for life
support, etc.) are requested to consult with FUJITSU sales
representatives before such use. The company will not be
responsible for damages arising from such use without prior
approval.
Any semiconductor devices have inherently a certain rate of
failure. You must protect against injury, damage or loss from
such failures by incorporating safety design measures into your
facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating
conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
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prior authorization by Japanese government should be required
for export of those products from Japan.
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