AP9581GP-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement -80V RDS(ON) 15mΩ ID ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product BVDSS G -95A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G TO-220(P) D S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -80 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V -95 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V -60 A 1 IDM Pulsed Drain Current -300 A PD@TC=25℃ Total Power Dissipation 250 W TSTG Storage Temperature Range -55 to 150 o C -55 to 150 o C Operating Junction Temperature Range TJ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.5 o C/W 62 o C/W 1 201107181 AP9581GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -80 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A - - 15 mΩ VGS=-4.5V, ID=-20A - - 20 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-30A - 60 - S IDSS Drain-Source Leakage Current VDS=-64V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=-30A - 72 115 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-64V - 11 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 45 - nC td(on) Turn-on Delay Time VDS=-40V - 13 - ns Rise Time ID=-30A - 60 - ns td(off) Turn-off Delay Time RG=3.3Ω - 135 - ns tf Fall Time VGS=-10V - 165 - ns Ciss Input Capacitance VGS=0V - 6200 9920 pF Coss Output Capacitance VDS=-25V - 900 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 390 - pF Min. Typ. (P) tr Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-30A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=-10A, VGS=0V, - 60 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 125 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9581GP-HF 160 250 -10V -8.0V -7.0V -6.0V V G = - 5.0V -ID , Drain Current (A) 200 -10V -8.0V -7.0V -6.0V V G = -5.0V o T C =150 C -ID , Drain Current (A) o T C = 25 C 150 100 120 80 40 50 0 0 0 2 4 6 8 10 0 2 Fig 1. Typical Output Characteristics 6 8 10 Fig 2. Typical Output Characteristics 18 2.0 I D = - 30 A V G = -10V I D = -20 A T C =25 o C Normalized RDS(ON) 16 RDS(ON) (mΩ) 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 14 12 1.6 1.2 0.8 10 0.4 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 40 Normalized -VGS(th) (V) 1.2 -IS(A) 30 T j =150 o C 20 T j =25 o C 1.0 0.8 0.6 10 0.4 0 0.2 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9581GP-HF f=1.0MHz 10 10000 -VGS , Gate to Source Voltage (V) V DS = - 64 V I D = - 30 A 8 C (pF) 8000 6 C iss 6000 4 4000 2 2000 C oss C rss 0 0 0 40 80 120 1 160 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Operation in this area limited by RDS(ON) 100us -ID (A) 100 Normalized Thermal Response (Rthjc) 1 1ms 10ms 100ms DC 10 T c =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 VG -ID , Drain Current (A) 80 QG -4.5V 60 QGS QGD 40 20 Charge Q 0 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 11. Maximum Continuous Drain Current v.s. Case Temperature Fig 12. Gate Charge Waveform 4