MOSFET SMD Type N-Channel Enhancement MOSFET NDT35N06 TO-252 0.15 1.50 -+ 0.15 ■ Features Unit: mm 6.50-+ 0.15 0.15 5.30-+ 0.2 0.2 ● VDS (V) = 60V ● ID = 35 A 2.30-+ 0.1 0.1 0.50 -+ 0.8 0.7 3 .8 0 4 ● RDS(ON) ＜ 23mΩ (VGS = 10V) 0.60-+ 0.1 0.1 2.3 0.15 5.55 -+ 0.15 +0.25 -0.1 0.127 max 2.65 1 +0.1 0.80-0.1 0.28 1.50 -+ 0.1 0.2 9.70 -+ 0.2 ● RDS(ON) ＜ 37mΩ (VGS = 4V) 0.15 0.50 -+ 0.15 2,4 ● RDS(ON) ＜ 33mΩ (VGS = 4.5V) 4.60-+ 0.15 0.15 3 1 : Gate 2 : Drain 3 : Source 4 : Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 35 Pulsed Drain Current IDP 105 Avalanche Current (Note.2) IAV 18 Avalanche Energy (Single Pulse) (Note.3) EAS 19 mJ Power Dissipation PD 40 W TJ 150 Tstg -55 to 150 (Note.1) Tc=25°C Junction Temperature Storage Temperature Range V A ℃ Note.1 :PW ≤ 10 us, duty cycle ≤ 1% Note.2 :L≤100μH, Single pulse Note.3 :VDD=10V, L=100μH, IAV=18A www.kexin.com.cn 1 MOSFET SMD Type N-Channel Enhancement MOSFET NDT35N06 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Typ Max ID=1mA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 Gate-Body Leakage Current IGSS VDS=0V, VGS=±16V ±10 Cutoff Voltage VGS(off) Forward Transfer Admittance Static Drain-Source On-Resistance VDS=10V , ID=1mA 60 1.2 2.6 |Yfs | VDS=10V , ID=18A 35 RDS(On)1 VGS=10V, ID=18A 17 23 RDS(On)2 VGS=4.5V, ID=9A 23 33 RDS(On)3 VGS=4.0V, ID=5A 25 37 Input Capacitance Ciss Coss Reverse Transfer Capacitance Crss 100 Total Gate Charge Qg 34.5 Gate Source Charge Qgs Gate Drain Charge Qgd VGS=10V, VDS=30V, ID=35A 16 110 Turn-Off DelayTime td(off) VSD See specified Test Circuit IS=35A,VGS=0V VDD=30V VIN ID=18A RL=1.67Ω VIN D PW=10μs D.C.≤1% VOUT G P.G www.kexin.com.cn 50Ω ns 125 87 Switching Time Test Circuit: 10V 0V nC 6.8 tr tf mΩ pF 6.5 td(on) IS V S 150 Turn-On DelayTime Turn-Off Fall Time μA 1820 VGS=0V, VDS=20V, f=1MHz Turn-On Rise Time Maximum Body-Diode Continuous Current Unit V Output Capacitance Diode Forward Voltage 2 Min VDSS Drain-Source Breakdown Voltage S 0.96 35 A 1.2 V MOSFET SMD Type N-Channel Enhancement MOSFET NDT35N06 ■ Typical Characterisitics 15 10 3.0V VGS=2.5V 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 30 20 10 0 2.0 0 0.5 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 9A 35 18A 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 |yfs | -- ID 10 = Tc 7 75 °C °C 5 3 2 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 5.0 5.5 Single pulse 40 =5A , ID V 0 . =4 VGS =9A , ID V 5 . A =4 =18 VGS , ID V 0 . =10 VGS 35 30 25 20 15 10 5 100 7 5 3 2 C 5° --2 4.5 --25 0 25 50 75 100 125 150 2 3 5 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 5° C 25° C --25° C 25 4.0 Case Temperature, Tc -- ° C VDS=10V Single pulse 2 3.5 Tc= 7 3 3.0 45 0 --50 10 11 12 13 14 15 16 Source Current, IS -- A Forward Transfer Admittance, |yfs | -- S 5 2.5 50 Gate-to-Source Voltage, VGS -- V 7 2.0 RDS(on) -- Tc 55 Tc=25° C Single pulse ID=5A 40 1.5 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- VGS 55 25° C 40 Drain-to-Source Voltage, VDS -- V 45 Tc= --25 ° C 75° C 4.0 V V 50 Tc= 75° C --25 ° C 20 3.5V VDS=10V Single pulse 25 °C 25 ID -- VGS 60 4.5 16.0 10.0V V 8.0V 6.0V 30 Drain Current, ID -- A ID -- VDS Tc=25° C Single pulse Drain Current, ID -- A 35 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Diode Forward Voltage, VSD -- V www.kexin.com.cn 3 MOSFET SMD Type N-Channel Enhancement MOSFET NDT35N06 ■ Typical Characterisitics SW Time -- ID 7 3 td(off) 100 7 tf 5 tr 3 td(on) 2 10 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 2 Coss Crss 5 5 7 100 Drain Current, ID -- A Drain Current, ID -- A 15 20 25 30 35 40 PD -- Tc 45 Avalanche Energy derating factor -- % 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- ° C www.kexin.com.cn 3 2 Operation in this area is limited by RDS(on). 1.0 7 5 140 160 μs s Tc=25° C Single pulse 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, V EAS -- Ta 120 40 ms 0m 10 7 5 0.1 0.1 Total Gate Charge, Qg -- nC 10 10 10 0μ s on 10 3 2 10 ati 5 ID=35A 3 2 . PW≤10μs er 2 1 60 op 3 50 DC 4 40 s 5 30 1m 6 20 IDP=105A 100 7 5 7 10 ASO 3 2 8 0 0 Drain-to-Source Voltage, VDS -- V VGS -- Qg VDS=30V ID=35A 9 Gate-to-Source Voltage, VGS -- V 7 7 7 0.1 Allowable Power Dissipation, PD -- W 1000 100 10 4 Ciss 2 2 0 f=1MHz 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 Ciss, Coss, Crss -- VDS 5 VDD=30V VGS=10V 2 DS 3 -- V 5 7 100 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- ° C 150 175