A Product Line of Diodes Incorporated Green FZT458 400V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 400V IC = 300mA High Continuous Current Excellent hFE Characteristics up to 100mA Low Saturation Voltage VCE(sat) < 200mV @ 20mA Complementary PNP Type: FZT558 Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT223 Case Material: Molded Plastic. “Green” Molding Compound; UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) C SOT223 B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product FZT458TA FZT458QTA Notes: Compliance AEC-Q101 Automotive Marking FZT458 FZT458 Reel size (inches) 7 7 Tape width (mm) 12 12 Quantity per reel 1,000 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information FZT 458 FZT458 Document Number DS33133 Rev. 6 - 2 YWW SOT223 FZT 458 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT458 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Peak Pulse Current Symbol VCBO VCEO VEBO IC IB ICM Value 400 400 7 300 200 1 Unit V V V mA mA A Value 2 3 62.5 41.7 19.41 -55 to +150 Unit W W °C/W °C/W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) PD RθJA RθJL TJ, TSTG ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 8,000 400 Unit V V JEDEC Class 3B C 6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is mounted on 50mm x 50mm single sided 2oz weight copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT458 Document Number DS33133 Rev. 6 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT458 Thermal Characteristics and Derating Characteristics IC Collector Current (A) 1 100m DC 1s 100ms 10ms 10m 1ms 100µs Single Pulse Tamb=25°C 1m 1 10 100 VCE Collector-Emitter Voltage (V) Safe Operating Area 50 T amb=25°C 60 25mm x 25mm 2oz FR4 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 70 Single Pulse T amb=25°C 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 2oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) 1k Pulse Power Dissipation FZT458 Document Number DS33133 Rev. 6 - 2 50mm x 50mm 2oz FR4 30 D=0.5 20 Single Pulse D=0.2 10 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (W) Max Power Dissipation (W) Transient Thermal Impedance T amb=25°C 40 3.0 50mm x 50mm 2oz FR4 2.5 2.0 25mm x 25mm 2oz FR4 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT458 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO Collector-Emitter Saturation Voltage (Note 10) VCE(sat) Base-Emitter Saturation Voltage (Note 10) Base-Emitter Turn-On Voltage (Note 10) VBE(sat) VBE(on) DC Current Gain (Note 10) Current Gain-Bandwidth Product (Note 10) Output Capacitance (Note 10) Switching Times Note: Min 400 400 7 100 100 15 Typ Max 100 100 100 0.2 0.5 0.9 0.9 fT 50 MHz Cobo ton toff 135 2260 5 pF ns hFE Unit V V V nA nA nA V V V 300 Test Condition IC = 100µA IC = 10mA IE = 100µA VCB = 320V VCE = 320V VEB = 4V IC = 20mA, IB = 2mA IC = 50mA, IB = 6mA IC = 50mA, IB = 5mA IC = 50mA, VCE = 10V IC = 1mA, VCE = 10V IC = 50mA, VCE = 10V IC = 100mA, VCE = 10V VCE = 20V, IC = 10mA f = 20MHz VCB = 20V. f = 1MHz IC = 50mA, VCC = 100V IB1 = 5mA, IB2 = -10mA 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FZT458 Document Number DS33133 Rev. 6 - 2 4 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT458 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1 0.40 Tamb=25°C 0.35 IC/IB=20 0.30 VCE(SAT) (V) VCE(SAT) (V) IC/IB=50 100m IC/IB=10 IC/IB=20 100°C 0.25 0.20 25°C 0.15 0.10 -55°C 0.05 10m 1m 10m 100m 1m IC Collector Current (A) 10m V CE(SAT) v IC V CE(SAT) v IC 1.0 210 100°C 1.0 0.8 150 25°C 120 0.6 90 -55°C 0.4 60 0.2 30 0.0 1m 10m 100m IC/IB=20 180 0.8 VBE(SAT) (V) VCE=10V Typical Gain (hFE) Normalised Gain 1.2 100m IC Collector Current (A) -55°C 0.6 25°C 100°C 0.4 0 1m 10m 100m IC Collector Current (A) IC Collector Current (A) hFE v IC V BE(SAT) v IC 1.0 VCE=10V VBE(ON) (V) 0.8 -55°C 0.6 25°C 100°C 0.4 1m 10m 100m IC Collector Current (A) V BE(ON) v IC FZT458 Document Number DS33133 Rev. 6 - 2 5 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT458 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm E1 Gauge Plane 0.25 Seating Plane e1 L b 0° -1 0° e A1 7° 7° A Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X Note: C For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. FZT458 Document Number DS33133 Rev. 6 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT458 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com FZT458 Document Number DS33133 Rev. 6 - 2 7 of 7 www.diodes.com May 2015 © Diodes Incorporated