EC747N60 600V,7A N-Channel Power MOSFET C o n v e r t e r Features ◆ 650V, 7A, RDS(ON)(Max.) = 1.1Ω @ VGS = 10V ◆ Low Crss ◆ Fast Switching ◆ 100 % Avalanche Tested Applications Adapter LCD Panel Power Switching Mode Power Supply E-Bike Charger Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Limit Symbol Parameter VDS Drain-Source Voltage a 600 V VGS Gate-Source Voltage 30 V Drain Current-Continuous, TC =25 ℃ 7 A Drain Current-Continuous, TC =100 ℃ 4.2 A IDM Drain Current-Pulsed b 28 A PD Maximum Power Dissipation @ TJ =25 ℃ EAS Single Pulsed Avalanche Energy e ID dv/dt TJ, TSTG Peak Diode Recovery dv/dt TO-220 TO-263 TO-220F 125 c Operating and Store Temperature Range 40 Unit W 196 mJ 4.6 V/ns -55 to 150 ℃ Thermal Characteristics Symbol R JC Parameter Thermal Resistance, Junction-Case Max. R JA Thermal Resistance, Junction-Ambient Max. E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 5 Value 1 3.1 63 Unit ℃/W ℃/W 4J09N-Rev.F001 EC747N60 600V,7A N-Channel Power MOSFET Electrical Characteristics( TJ = 25°C unless otherwise noted) ■ Off Characteristics Symbol Min. Typ. VGS = 0V, ID = 250μA 600 0 VDS = 600V, VGS = 0V Test Condition Parameter BVDSS Drain-Source Breakdown Voltage C o n v e r Max. Unit t V e 20 μ Ar IDSS Zero Gate Voltage Drain Current IGSSF Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA IGSSR Reverse Gate Body Leakage Current VDS = 0V, VGS = -30V - - -100 nA ■ On Characteristics VGS(th) VDS = VGS, ID = 250µA 2.0 Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance d gFS Forward Transconductance d 2.9 4.0 V VGS = 10V, ID = 3.5A - 0.92 1.1 Ω VDS = 15V, ID = 3.5A - 3.6 10 S - 1270 - pF - 160 - pF - 26 - pF ■ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz ■ Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge E-CMOS Corp. (www.ecmos.com.tw) VDD = 300V, ID = 7A RG = 10Ω, VGS = 10V VDS = 300V, ID = 7A VGS = 10V Page 2 of 5 - 29 - ns - 9 - ns - 50 - ns - 13 - ns - 32 nC - 9 nC - 13 nC 4J09N-Rev.F001 EC747N60 600V,7A N-Channel Power MOSFET ■ Drain-Source Diode Characteristics C o n v Ae r A t Ve r IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 7 ISM Miximum Pulsed Current VGS = 0V - - 28 VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A - 0.79 1.5 trr Reverse Recovery time - 325 - ns Qrr Reverse Recovery Charge VGS = 0V, IS = 7A, di/dt = 100A/µs - 2.5 - µC Notes : a. TJ = +25 ℃ to +150 ℃. b. Repetitive rating; pulse width limited by maximum junction temperature. c. ISD< 7.0A di/dt < 100 A/µs, VDD < BVDSS, T J < +150 ℃ d. Pulse width < 300 µs; duty cycle < 2%. e. L=10mH, VDD =50V, ID=6.0A, RG =25Ω Starting TJ =25 ℃.. ORDERING INFORMATION Part Number Package EC747N60AFR TO-220F-3L EC747N60AR TO-220-3L EC747N60A9R TO-263-3L Marking 747N60 LLLLL YYWW Marking Information 1. LLLLL：Lot No. 2. YY：Year code 3. WW：Week code Square Pulse Duration (sec) for EC747N60AF Figure 1. Normalized Effective Transient Thermal Impedance With Pulse Duration E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 5 4J09N-Rev.F001 600V,7A N-Channel Power MOSFET EC747N60 C o n v e r t e r TJ, Junction Temperature( C) Figure 2. Normalized On-Resistance Variation Figure with Temperature Figure 4. Capacitance Characteristics Figure 6. On-State Characteristics VDS, Drain-Source Voltage(V) for EC747N60AF 3. Maximum SafeOperating Area Figure 5. Gate Charge Characteristics Figure 7. Body Diode Forward Voltage Variation with Source Current E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 5 4J09N-Rev.F001 600V,7A N-Channel Power MOSFET EC747N60 C o n v e r t e r Figure 8. Gate Threshold Variation with Temperature E-CMOS Corp. (www.ecmos.com.tw) Page 5 of 5 Figure 9. Transfer Characteristics 4J09N-Rev.F001