Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA ! Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264 25 A @ 90°C 38 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost. • • • • • • Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 216 mJ/A typical at 125°C High Short Circuit Capability – 10 ms minimum Soft Recovery Free Wheeling Diode is included in the package Robust High Voltage Termination Robust RBSOA C G G C E CASE 340G–02 STYLE 5 TO–264 E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 1200 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 1200 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM 38 25 76 Adc PD 212 1.69 Watts W/°C TJ, Tstg – 55 to 150 °C tsc 10 ms RθJC RθJC RθJA 0.6 0.9 35 °C/W TL 260 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 IGBT Motorola Motorola, Inc. 1997 Device Data 1 MGY25N120D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1200 — — 960 — — — — — — 100 2500 — — 250 — — — 2.37 2.15 2.98 3.24 — 4.19 4.0 — 6.0 10 8.0 — mV/°C gfe — 12 — Mhos Cies — 1859 — pF Coes — 198 — Cres — 30 — td(on) — 91 — OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) V(BR)CES Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc mV/°C µAdc nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 12.5 Adc) (VGE = 15 Vdc, IC = 12.5 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 25 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time tr — 124 — td(off) — 196 — tf — 310 — Eoff — 2.44 4.69 Turn–On Switching Loss Eon — 3.14 5.22 Total Switching Loss Ets — 5.58 9.91 Turn–On Delay Time td(on) — 88 — Turn–Off Delay Time Fall Time Turn–Off Switching Loss (VCC = 720 Vdc, Vd IC = 25 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH RG = 20 Ω) Energy losses include “tail” Rise Time tr — 126 — td(off) — 236 — tf — 640 — Eoff — 5.40 — Turn–On Switching Loss Eon — 5.03 — Total Switching Loss Ets — 10.43 — QT — 62 — Q1 — 22 — Q2 — 25 — — — — 2.89 1.75 3.65 3.50 — 4.45 Turn–Off Delay Time Fall Time Turn–Off Switching Loss (VCC = 720 Vdc, Vd IC = 25 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH RG = 20 Ω, TJ = 125°C) 125 C) Energy losses include “tail” Gate Charge (VCC = 720 Vdc, Vdc IC = 25 Adc Adc, VGE = 15 Vdc) ns mJ ns mJ nC DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 12.5 Adc) (IEC = 12.5 Adc, TJ = 125°C) (IEC = 25 Adc) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 VFEC Vdc (continued) Motorola IGBT Device Data MGY25N120D ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit trr — 114 — ns ta — 71 — tb — 43 — QRR — 0.65 — µC trr — 226 — ns ta — 165 — tb — 61 — QRR — 1.90 — — 13 — DIODE CHARACTERISTICS — continued Reverse Recovery Time ((IF = 25 Adc, Ad , VR = 720 Vd Vdc,, dIF/dt = 150 A/µs) Reverse Recovery Stored Charge Reverse Recovery Time ((IF = 25 Adc, Ad , VR = 720 Vd Vdc,, dIF/dt = 150 A/µs, TJ = 125°C) Reverse Recovery Stored Charge µC INTERNAL PACKAGE INDUCTANCE LE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) nH TYPICAL ELECTRICAL CHARACTERISTICS 75 75 VGE = 20 V 15 V 60 45 12.5 V 30 10 V 15 0 0 2 1 3 4 6 5 7 15 V 45 12.5 V 30 10 V 15 0 8 1 0 50 40 30 20 25°C 10 6 8 10 12 14 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) Figure 3. Transfer Characteristics Motorola IGBT Device Data 16 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) VCE = 10 V 250 µs PULSE WIDTH 4 3 5 4 6 7 8 Figure 2. Output Characteristics 70 0 2 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics TJ = 125°C 17.5 V 60 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 60 VGE = 20 V TJ = 125°C 17.5 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) TJ = 25°C 4 VGE = 15 V 250 µs PULSE WIDTH IC = 20 A 3 15 A 10 A 2 1 – 50 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature 3 MGY25N120D TJ = 25°C VGE = 0 V Cies C, CAPACITANCE (pF) VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) 10000 1000 Coes 100 Cres 10 0 10 5 15 20 Q1 Q2 8 6 TJ = 25°C IC = 25 A 4 2 0 10 0 20 30 40 50 60 70 Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus Total Charge 7 Eoff , TURN–OFF ENERGY LOSSES (mJ) 5.5 VCC = 720 V VGE = 15 V TJ = 125°C 5 4.5 4 15 A 3.5 3 10 A 2.5 VCC = 720 V VGE = 15 V RG = 20 Ω 6 5 IC = 25 A 4 15 A 3 2 10 A 1 0 10 20 30 40 50 25 75 50 100 125 RG, GATE RESISTANCE (OHMS) TC, CASE TEMPERATURE (°C) Figure 7. Turn–Off Losses versus Gate Resistance Figure 8. Turn–Off Losses versus Case Temperature 150 100 50 IC , COLLECTOR CURRENT (AMPS) Eoff , TURN–OFF ENERGY LOSSES (mJ) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 Qg, TOTAL GATE CHARGE (nC) 40 TJ = 125°C 30 25°C 20 10 10 1 VGE = 15 V RGE = 20 Ω TJ = 125°C 0.1 0 1 2 3 4 VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage Drop 4 12 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) IC = 25 A 0 QT 14 25 6 2 16 5 1 10 100 1000 10,000 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 10. Reverse Biased Safe Operating Area Motorola IGBT Device Data MGY25N120D 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 1.0E+00 1.0E+01 t, TIME (s) Figure 11. Thermal Response Motorola IGBT Device Data 5 MGY25N120D PACKAGE DIMENSIONS 0.25 (0.010) M T B M –Q– –B– –T– C E U N DIM A B C D E F G H J K L N P Q R U W A 1 R 2 L 3 –Y– P K W F 2 PL G J H D 3 PL 0.25 (0.010) M Y Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 S STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER CASE 340G–02 TO–264 ISSUE F Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: [email protected] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ 6 ◊ MGY25N120D/D Motorola IGBT Device Data