Preliminary Datasheet HAT1093C R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS(on) = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 2 3 4 5 D DD D 4 1 2 3 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 Ratings –12 ±8 –3 –12 Unit V V A A IDR PchNote 2 Tch Tstg –3 900 150 –55 to +150 A mW °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 Page 1 of 6 HAT1093C Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr Min –12 ±8 — — –0.3 — — — 4 — — — — — — — — Turn - off delay time Fall time Body - Drain diode forward voltage td(off) tf VDF — — — Note: Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) Typ — — — — — 41 54 79 6.5 940 200 130 11 1.5 3.5 18 23 Max — — ±10 –1 –1.2 54 76 119 — — — — — — — — — Unit V V μA μA V mΩ mΩ mΩ S pF pF pF nC nC nC ns ns 50 28 –0.8 — — –1.1 ns ns V Test Conditions ID = –10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±6.4V, VDS = 0 VDS =-12 V, VGS = 0 ID = –1 mA, VDS = –10 V Note3 ID = –1.5 A, VGS = –4.5 V Note3 ID = –1.5 A, VGS = –2.5 V Note3 ID = –1.5 A, VGS = –1.8 V Note3 ID = –1.5 A, VDS = –10 V Note3 VDS = –10 V, VGS = 0, f = 1 MHz VDS = –10 V, VGS = –4.5 V, ID = –3 A VDS = –10 V, VGS = –4.5 V, ID = –1.5 A, RL = 6.7 Ω, Rg = 4.7 Ω IF = –3 A, VGS = 0 3. Pulse test R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 Page 2 of 6 HAT1093C Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area –100 1.2 0.8 10 μs –10 1 –3 =1 –1 0 m s er –0.3 io at n 50 100 150 Ambient Temperature –0.1 Operation in this area is limited by RDS(on) –0.01 –0.03 –0.1 –0.3 –1 200 20 20 –2.2 V –2.0 V 8 –1.8 V VGS = –1.6 V 4 0 –2 –4 –6 –8 Drain Current ID (A) VDS = –10 V Pulse Test 16 12 –10 –30 –100 Typical Transfer Characteristics Pulse Test –10 V –5 V –2.4 V –3 Drain to Source Voltage VDS (V) Ta (°C) Typical Output Characteristics 16 25°C 12 Tc = 75°C –25°C 8 4 0 –10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) Drain Current ID (A) m s PW –0.03 0 Drain to Source Voltage VDS(on) (mV) Ta = 25°C,1shot pulse 100μs When using the FR4 board. op 0.4 –30 Drain Current ID (A) Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), Ta = 25°C DC Channel Dissipation Pch (W) 1.6 10000 –200 Pulse Test –160 ID = –3 A –120 –80 –1.5 A –40 –1 A 0 0 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 Pulse Test 1000 –1.8 V –2.5 V 100 VGS= –4.5 V 10 –1 –10 –100 Drain Current ID (A) Page 3 of 6 Preliminary Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT1093C 200 Pulse Test 160 –3.0 A 120 –1.8 V –1.5, –1 A 80 –2.5 V 40 VGS = –4.5 V 0 –25 0 25 50 ID = –3, –1.5, –1 A 75 100 125 150 Case Temperature Tc 100 Tc = –25°C 10 75°C 1 VDS = –10 V Pulse Test 0.1 –0.1 Typical Capacitance vs. Drain to Source Voltage VDD = –12 V –10 V –5 V –30 –6 4 8 12 16 Ciss 1000 Coss 300 100 Crss 30 10 3 –8 20 1 0 –2 –4 –6 –8 –10 –12 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics 1000 20 Pulse Test 16 –5.5 V 12 VGS = 0 V 8 4 0 VGS = 0 f = 1 MHz 3000 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 VGS = –10 V, VDD = –10 V Rg = 4.7 Ω Switching Time t (ns) –40 0 Reverse Drain Current IDR (A) –4 10000 Capacitance C (pF) –2 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 0 VDD = –5 V –10 V –12 V ID = –3 A –100 Drain Current ID (A) (°C) 0 –20 –10 –1 Dynamic Input Characteristics –10 25°C td(off) 100 tr tf 10 1 0.1 td(on) 1 10 100 Drain Current ID (A) Page 4 of 6 HAT1093C Preliminary Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 4.7 Ω Vin –4.5 V Vout td(on) R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 90% 90% VDD = –10 V 10% 10% tr td(off) tf Page 5 of 6 HAT1093C Preliminary Package Dimensions JEITA Package Code ⎯ Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L b S A e A2 Reference Symbol A A1 y S S e1 b l1 b1 c Pattern of terminal position areas A-A Section A A1 A2 b c D E e HE L LP x y b1 e1 l1 Dimension in Millimeters Min 0.7 0 0.7 0.15 0.1 1.9 1.6 Nom 0.2 0.15 2.0 1.7 0.65 2.1 0.2 2.05 0.1 0.15 Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.3 1.9 0.4 Ordering Information Orderable Part Number HAT1093C-EL-E R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333 Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 12F., 234 Teheran-ro, Gangnam-Ku, Seoul, 135-920, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2014 Renesas Electronics Corporation. All rights reserved. Colophon 4.0