BTA/BTB12 and T12 Series 12A TRIACS TO-220AB Insulated (BTA12) TO-220AB (BTB12) MAIN FEATURES: Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 and 800 V IGT (Q ) 1 5 to 50 mA DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) D2PAK (T12-G) A2 G A1 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t dI/dt Parameter RMS on-state current (full sine wave) PG(AV) Tstg Tj 2014-6-9 Unit 12 A A D²PAK/TO-220AB Tc = 105°C TO-220AB Ins. Tc = 90°C F = 50 Hz t = 20 ms 120 F = 60 Hz t = 16.7 ms 126 Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns VDSM/VRSM Non repetitive surge peak off-state voltage IGM Value Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 1 78 A² s F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C + 100 www.kersemi.com BTA/BTB12 and T12 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol IGT (1) VGT Test Conditions VD = 12 V Quadrant RL = 30 Ω VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 100 mA IL IG = 1.2 IGT T12 TW SW CW BW 35 5 10 35 50 I - II - III MAX. I - II - III MAX. 1.3 I - II - III MIN. 0.2 I - III ■ mA V V MAX. 35 10 15 35 50 mA MAX. 50 10 25 50 70 mA 60 15 30 60 80 MIN. 500 20 40 500 1000 V/µs MIN. - 3.5 6.5 - - A/ms VD = 67 %VDRM gate open Tj = 125°C (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Unit T1235 II dV/dt (2) BTA/BTB12 Tj = 125°C (dV/dt)c = 10 V/µs Tj = 125°C - 1 2.9 - - Without snubber Tj = 125°C 6.5 - - 6.5 12 STANDARD (4 Quadrants) Symbol Test Conditions IGT (1) VD = 12 V Quadrant RL = 30 Ω VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 500 mA IL IG = 1.2 IGT 25 50 50 100 Unit ALL MAX. 1.3 V ALL MIN. 0.2 V I - III - IV VD = 67 %VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c = 5.3 A/ms B MAX. Tj = 125°C mA MAX. 25 50 mA MAX. 40 50 mA 80 100 MIN. 200 400 V/µs MIN. 5 10 V/µs II dV/dt (2) C I - II - III IV VGT VGD BTA/BTB12 STATIC CHARACTERISTICS Symbol VT (2) Test Conditions ITM = 17 A tp = 380 µs Tj = 25°C Value Unit MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 35 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA Tj = 125°C IRRM MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 2014-6-9 2 www.kersemi.com BTA/BTB12 and T12 Series THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient S=1 Value Unit D²PAK/TO-220AB 1.4 °C/W TO-220AB Insulated 2.3 D²PAK 45 TO-220AB TO-220AB Insulated 60 cm² °C/W S = Copper surface under tab PRODUCT SELECTOR Voltage (xxx) Sensitivity Type Package X 50 mA Standard TO-220AB X X 50 mA Snubberless TO-220AB BTA/BTB12-xxxC X X 25 mA Standard TO-220AB BTA/BTB12-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB12-xxxSW X X 10 mA Logic level TO-220AB BTA/BTB12-xxxTW X X 5 mA Logic Level TO-220AB T1235-xxxG X X 35 mA Snubberless D²PAK Part Number 600 V 800 V BTA/BTB12-xxxB X BTA/BTB12-xxxBW BTB: non insulated TO-220AB package ORDERING INFORMATION BT A 12 - 600 BW (RG) TRIAC SERIES INSULATION: A: insulated B: non insulated SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS SW: 10mA LOGIC LEVEL TW: 5mA LOGIC LEVEL VOLTAGE: 600: 600V 800: 800V CURRENT: 12A T 12 35 - 600 G PACKING MODE Blank: Bulk RG: Tube (-TR) TRIAC SERIES PACKAGE: G: D2PAK CURRENT: 12A VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 35: 35mA 2014-6-9 3 PACKING MODE: Blank: Tube -TR: Tape & Reel www.kersemi.com BTA/BTB12 and T12 Series OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA/BTB12-xxxyz BTA/BTB12-xxxyz 2.3 g 250 Bulk BTA/BTB12-xxxyzRG BTA/BTB12-xxxyz 2.3 g 50 Tube T1235-xxxG T1235xxxG 1.5 g 50 Tube T1235-xxxG-TR T1235xxxG 1.5 g 1000 Tape & reel Note: xxx = voltage, yy = sensitivity, z = type Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2-1: RMS on-state current versus case temperature (full cycle). P (W) IT(RMS) (A) 16 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 14 12 10 8 6 4 2 0 IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 10 11 12 BTB/T12 BTA Tc(°C) 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm),full cycle. K=[Zth/Rth] IT(RMS) (A) 3.5 1E+0 D2PAK (S=1cm2) 3.0 Zth(j-c) 2.5 2.0 1E-1 Zth(j-a) 1.5 1.0 0.5 0.0 Tamb(°C) 0 2014-6-9 25 50 75 tp(s) 100 125 4 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 www.kersemi.com BTA/BTB12 and T12 Series Fig. 4: values). On-state characteristics (maximum Fig. 5: Surge peak on-state current versus number of cycles. ITM (A) ITSM (A) 100 Tj max 10 Tj=25°C Tj max. Vto = 0.85 V Rd = 35 mΩ VTM(V) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 130 120 110 100 90 80 70 60 50 40 30 20 10 0 One cycle Repetitive Tc=90°C Number of cycles 1 10 100 1000 Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] 2.5 Tj initial=25°C dI/dt limitation: 50A/µs 1000 t=20ms Non repetitive Tj initial=25°C 2.0 IGT ITSM 1.5 100 I²t IH & IL 1.0 0.5 tp (ms) 10 0.01 Tj(°C) 0.10 1.00 10.00 Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1235). -20 0 20 40 60 80 100 120 140 Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 5.0 2.8 4.5 2.4 SW 4.0 3.5 2.0 C 1.6 0.0 -40 2.5 1.2 BW/CW/T1235 2.0 0.8 0.4 0.0 0.1 2014-6-9 TW 3.0 B 1.5 1.0 (dV/dt)c (V/µs) 1.0 10.0 (dV/dt)c (V/µs) 0.5 100.0 5 0.0 0.1 1.0 10.0 100.0 www.kersemi.com