PD - 97352A
IRLR8729PbF
IRLU8729PbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
30V
8.9mΩ
10nC
D
S
S
D
G
G
D-Pak
I-Pak
IRLR8729PbF IRLU8729PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
Units
30
V
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
58
41
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
PD @TC = 100°C
Maximum Power Dissipation
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
ID @ TC = 25°C
ID @ TC = 100°C
c
f
f
A
260
g
g
55
W
27
0.37
-55 to + 175
Soldering Temperature, for 10 seconds
W/°C
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
g
Typ.
Max.
–––
2.73
–––
50
–––
110
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
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are on page 11
1
12/16/08
IRLR/U8729PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
–––
21
–––
–––
6.0
8.9
–––
8.9
11.9
V
mV/°C Reference to 25°C, ID = 1mA
mΩ
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-6.2
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
IGSS
Conditions
VGS = 0V, ID = 250µA
µA
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
VDS = VGS, ID = 25µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Forward Transconductance
91
–––
–––
Total Gate Charge
–––
10
16
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.1
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.3
–––
Qgd
Gate-to-Drain Charge
–––
4.0
–––
ID = 20A
2.6
–––
See Fig. 16
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
4.8
–––
Qoss
Output Charge
–––
6.3
–––
nC
RG
td(on)
Gate Resistance
–––
–––
1.6
10
2.7
–––
Ω
Turn-On Delay Time
tr
Rise Time
–––
47
–––
td(off)
Turn-Off Delay Time
–––
11
–––
tf
Fall Time
–––
10
–––
Ciss
Input Capacitance
–––
1350
–––
Coss
Output Capacitance
–––
280
–––
Crss
Reverse Transfer Capacitance
–––
120
–––
gfs
Qg
Qgodr
nA
e
e
VGS = 20V
VGS = -20V
S
VDS = 15V, ID = 20A
nC
VGS = 4.5V
VDS = 15V
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns
ID = 20A
e
RG = 1.8Ω
See Fig. 14
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
c
Typ.
–––
d
c
Max.
74
Units
mJ
–––
20
A
–––
5.5
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
–––
–––
–––
–––
(Body Diode)
ISM
Pulsed Source Current
c
(Body Diode)
f
58
A
260
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
16
24
ns
Qrr
Reverse Recovery Charge
–––
19
29
nC
ton
Forward Turn-On Time
2
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A, VDD = 15V
di/dt = 300A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLR/U8729PbF
1000
1000
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
1
≤60µs PULSE WIDTH
BOTTOM
10
2.5V
Tj = 25°C
2.5V
≤60µs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
T J = 175°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
ID = 25A
VGS = 10V
1.5
1.0
0.5
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRLR/U8729PbF
10000
5.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
ID= 20A
VGS, Gate-to-Source Voltage (V)
Crss = C gd
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
3.0
2.0
1.0
0.0
100
1
10
0
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
4
6
8
10
12
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
2
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100
T J = 175°C
10
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS= 24V
VDS= 15V
4.0
2.0
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR/U8729PbF
60
2.5
VGS(th) , Gate threshold Voltage (V)
Limited By Package
ID, Drain Current (A)
50
40
30
20
10
2.0
1.5
ID = 25µA
ID = 50µA
ID = 100µA
1.0
0
0.5
25
50
75
100
125
150
175
-75 -50 -25 0
T C , Case Temperature (°C)
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
τJ
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
τC
Ri (°C/W) τi (sec)
1.251
0.000513
1.481
0.004337
C i= τi /R i
Ci = τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8729PbF
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
VGS
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
300
15V
ID
4.4A
6.5A
BOTTOM 20A
TOP
250
200
150
100
50
0
tp
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
V DS
Fig 12b. Unclamped Inductive Waveforms
VGS
RG
Current Regulator
Same Type as D.U.T.
RD
D.U.T.
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
50KΩ
12V
Fig 14a. Switching Time Test Circuit
.2µF
.3µF
D.U.T.
+
V
- DS
VDS
90%
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 13. Gate Charge Test Circuit
6
10%
VGS
td(on)
tr
t d(off)
tf
Fig 14b. Switching Time Waveforms
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IRLR/U8729PbF
Driver Gate Drive
P.W.
+
D=
Period
P.W.
Period
VGS=10V
D.U.T
-
+
-
Circuit Layout Considerations
D.U.T. ISD Waveform
• Low Stray Inductance
• Ground Plane
Reverse
• Low Leakage Inductance Recovery
Body Diode Forward
Current Transformer
Current
+ Current
di/dt
D.U.T. VDS Waveform
RG
*
•
•
•
•
Re-Applied
V Voltage +
dv/dt controlled by RG
DD
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Diode Recovery
dv/dt
Body Diode
VDD
Forward Drop
- Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
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IRLR/U8729PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRLR/U8729PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
(;$03/( 7+,6,6$1,5)8
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1($
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5(&7,),(5
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$66(0%/<
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRLR/U8729PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRLR/U8729PbF
Orderable part number
Package Type
IRLR8729PBF
IRLR8729TRPBF
D-PAK
D-PAK
IRLU8729PBF
I-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and
2000
Reel
Tube/Bulk
75
Note
Qualification information†
Qualification level
Moisture Sensitivity
Level
Industrial††
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by
extension of the higher Industrial level.
D-PAK
MS L1
I-PAK
RoHS compliant
(per JE DE C J-S T D-020D†††)
Not applicable
Yes
† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 50A.
When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques
refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/08
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