JIEJIE JMC250-18 Chip - double mesa scrs of reverse blocking high-voltage Datasheet

JIEJIE MICROELECTRONICS CO.,Ltd
JMC250-16/18/20
Description:
1) Chip: double mesa SCRs of reverse blocking high-voltage
2) Chip area: 21.4mm×21.4mm (central gate thyristor)
3) Technology: mesa glass passivation technology, multilayer metallization
technology and non-void welding by vacuum welding technology
Typical Application:
Reactive power compensation, solid state relay, power module, etc.
Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, TC=25℃)
Parameter
Test Conditions
Operating junction temperature range
Symbol
Values
Unit
Tj
-40-125
℃
Repetitive peak off-state voltage
Tj=25℃
VDRM
1600/1800/2000
V
Repetitive peak reverse voltage
Tj=25℃
VRRM
1600/1800/2000
V
Average on-state current
TC=80℃
IT(AV)
250
A
Peak on-state surge current
tp=10ms
ITSM
5600
A
I2t value for fusing
tp=10ms
I2t
156800
A2s
dI/dt
150
A/μs
VD=2/3VDRM tp=200μs
Critical rate of rise of on-state current
IG=0.3A Tj=125℃
dIG/dt=0.3A/μs
Electrical Characteristics (Packaged into modules, unless otherwise specified, TC=25℃)
Parameter
Peak on-state voltage
Test Conditions
Symbol
Values
Unit
VTM
≤1.8
V
TC=25℃
IDRM1
≤100
μA
TC=125℃
IDRM2
≤35
mA
TC=25℃
IRRM1
≤100
μA
TC=125℃
IRRM2
≤35
mA
IT=780A tp=380μs
VD=VDRM
Repetitive peak off-state current
VR=VRRM
Repetitive peak reverse current
Triggering gate current
VD=12V RL=30Ω
IGT
20-150
mA
Latching current
IG=1.2 IGT
IL
≤350
mA
Holding current
I T=1A
IH
≤250
mA
Triggering gate voltage
VD=12V RL=30Ω
VGT
≤2
V
TEL:+86-513-83639777
- 1 / 3-
http://www.jjwdz.com
JIEJIE MICROELECTRONICS CO.,Ltd
Non triggering gate voltage
Critical rate of rise of voltage
VD=VDRM Tj=125℃
VD=2/3VDRM Tj=125℃
Gate Open
VGD
≥0.25
V
dV/dt
≥1000
V/μs
Mechanical Characteristics
Module size
23 mm×23 mm
Module thickness
1.6 mm
Welding area of cathode electrode
19.6 mm×19.6 mm
φ 1.5mm
Welding area of control electrode
A
K
G
symbol
Working Conditions
1) No severe mechanical shock as impact and drop off in the process of transportation, storage and
working of product.
2) Storage conditions
Temperature: 5~40℃
Relative humidity: ≤45%
Storage time: 3 days for the open package; 3 months for the closed package
3) Welding conditions
Recommended solder component: Sn63Sb37 (or lead-free solder of liquid quadrant less than 240℃)
Recommended soldering conditions: shown in Table 1
4) Welding in the gate spot is recommended to be completed one-time by using fixture. If it is necessary
to use a soldering iron, the temperature of soldering iron is controlled within 280℃ and time is controlled
within 20s.
TEL:+86-513-83639777
- 2 / 3-
http://www.jjwdz.com
JIEJIE MICROELECTRONICS CO.,Ltd
Table 1
Sn63Sb37 Soldering conditions
Average heating rate
3℃/s (Max)
Low limit of temperature
Preheating activation
Reflow zone
TS(Min)
100℃
Upper limit of temperature TS(Max)
150℃
Time (min ~ max)
60 ~ 90s
tS
Melting point temperature
TL
183℃ (Sn63Sb37)
Peak temperature
TP
240℃ (+0/-5℃)
Reflow time
tp
10~30s
(Peak temperature ±5℃)
Melting time
TL
40~60s
Maximum cooling rate
3.5℃/s
Recommended process time
300 ~ 360s
250℃
100℃
t
t
TL
200℃
150℃
Sn63Pb37
Tp
P
(10-30S)
Ts(max)
L
(40-60S)
Ts(min)
ts
60-90S
Ordering Information
J
M
C
250
-16
JieJie Microelectronics Co.,Ltd
16:VDRM/VRRM≥1600V
18:VDRM/VRRM≥1800V
20:VDRM/VRRM≥2000V
Module of series
C:Central gate
TEL:+86-513-83639777
- 3 / 3-
IT(AV)=250A
http://www.jjwdz.com
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