TI1 LMK00101 Ultra-low jitter lvcmos fanout buffer/level translator Datasheet

LMK00101
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LMK00101 Ultra-low Jitter LVCMOS Fanout Buffer/Level Translator with Universal Input
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FEATURES
TARGET APPLICATIONS
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1
2
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10 LVCMOS/LVTTL Outputs, DC to 200 MHz
Universal Input
– LVPECL
– LVDS
– HCSL
– SSTL
– LVCMOS / LVTTL
Crystal Oscillator Interface
– Crystal Input Frequency: 10 to 40 MHz
Output Skew: 6 ps
Additive Phase Jitter
– 30 fs at 156.25 MHz (12 kHz to 20 MHz)
Low Propagation Delay
Operates with 3.3 or 2.5 V Core Supply Voltage
Adjustable Output Power Supply
– 1.5 V, 1.8 V, 2.5 V, and 3.3 V For Each Bank
32 pin WQFN Package 5.0 x 5.0 x 0.8 mm
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LO Reference Distribution for RRU
Applications
SONET, Ethernet, Fibre Channel Line Cards
Optical Transport Networks
GPON OLT/ONU
Server and Storage Area Networking
Medical Imaging
Portable Test and Measurement
High-end A/V
DESCRIPTION
The LMK00101 is a high performance, low noise
LVCMOS fanout buffer which can distribute 10 ultralow jitter clocks from a differential, single ended, or
crystal input. The LMK00101 supports synchronous
output enable for glitch free operation. The ultra lowskew, low-jitter, and high PSRR make this buffer
ideally suited for various networking, telecom, server
and storage area networking, RRU LO reference
distribution, medical and test equipment applications.
The core voltage can be set to 2.5 or 3.3 V, while the
output voltage can be set to 1.5, 1.8, 2.5 or 3.3 V.
The LMK00101 can be easily configured through pin
programming.
Functional Block Diagram
Bank A
CLKout0
CLKout1
OSCin
CLKout2
OSCout
CLKout3
CLKout4
CLKin0
10 LVCMOS
Outputs
CLKin0*
Bank B
CLKin1
CLKout5
CLKin1*
CLKout6
CLKout7
CLKout8
SEL[1:0]
OE
CLKout9
SYNC
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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LMK00101
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GND
GND
CLKin1
CLKin1*
SEL0
SEL1
32
31
30
29
28
27
26
25
GND
OE
Connection Diagram
CLKout0
Vddo
CLKout1
GND
CLKout2
Vddo
DAP
24
23
22
21
20
19
18
17
CLKout9
Vddo
CLKout8
GND
CLKout7
Vddo
CLKout6
CLKout5
CLKin0
CLKin0*
GND
GND
OSCin
OSCout
GND
Vdd
9
10
11
12
13
14
15
16
CLKout3
CLKout4
1
2
3
4
5
6
7
8
Figure 1. 32-Pin WQFN Package
(Top down view through device)
PIN DESCRIPTIONS
Pin Name
Type
DAP
DAP
-
Description
The DAP should be grounded
1
CLKout0
Output
LVCMOS Output
2, 6
Vddo
Power
Power Supply for Bank A (CLKout0 to CLKout4) CLKout pins.
19,23
Vddo
Power
Power Supply for Bank B (CLKout5 to CLKout9) CLKout pins.
3
CLKout1
Output
LVCMOS Output
4,9,15,16,
21,25,26,32
GND
GND
5
CLKout2
Output
LVCMOS Output
7
CLKout3
Output
LVCMOS Output
8
CLKout4
Output
LVCMOS Output
10
Vdd
Power
Supply for operating core and input buffer
11
OSCin
Input
Input for Crystal
12
OSCout
Output
13
CLKin0
Input
Input Pin
14
CLKin0*
Input
Complementary input pin
17
CLKout5
Output
LVCMOS Output
18
CLKout6
Output
LVCMOS Output
20
CLKout7
Output
LVCMOS Output
22
CLKout8
Output
LVCMOS Output
24
CLKout9
Output
LVCMOS Output
27
CLKin1*
Input
Complementary Input Pin
28
CLKin1
Input
Input Pin
29
SEL1
Input
MSB for Input Clock Selection. This pin has an internal pull-down resistor.
(1)
2
Pin #
Ground
Output for Crystal
30
SEL0
Input
LSB for Input Clock Selection. This pin has an internal pull-down resistor.
31
OE
Input
Output Enable. This pin has an internal pull-down resistor.
(1)
(1)
(1)
CMOS control input with internal pull-down resistor.
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS (1) (2) (3)
(1)
(2)
(3)
Parameter
Symbol
Ratings
Units
Core Supply Voltage
Vdd
-0.3 to 3.6
V
Output Supply Voltage
Vddo
-0.3 to 3.6
V
Input Voltage
VIN
-0.3 to Vdd + 0.3
V
Storage Temperature Range
TSTG
-65 to 150
°C
Lead Temperature (solder 4 s)
TL
+260
°C
Junction Temperature
TJ
+125
°C
"Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.
This device is a high performance integrated circuit with ESD handling precautions. Handling of this device should only be done at ESD
protected work stations. The device is rated to a HBM-ESD of > 2.5 kV, a MM-ESD of > 250 V, and a CDM-ESD of > 1 kV.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Units
Ambient Temperature
TA
-40
25
85
°C
Core Supply Voltage
Vdd
2.375
3.3
3.45
V
Vddo
1.425
3.3
Vdd
V
Output Supply Voltage
(1)
(1)
Vddo should be less than or equal to Vdd (Vddo ≤ Vdd)
PACKAGE THERMAL RESISTANCE
32-Lead WQFN
Package
Symbols
Ratings
Units
Thermal resistance from junction to ambient
on 4-layer Jedec board (1)
θJA
50
° C/W
θJC (DAP)
20
° C/W
Thermal resistance from junction to case
(2)
(1)
(2)
Specification assumes 5 thermal vias connect to die attach pad to the embedded copper plane on the 4-layer Jedec board. These vias
play a key role in improving the thermal performance of the QFN. For best thermal dissipation it is recommended that the maximum
number of vias be used on the board layout.
Case is defined as the DAP (die attach pad).
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ELECTRICAL CHARACTERISTICS
(2.375 V ≤ Vdd ≤ 3.45 V, 1.425 ≤ Vddo ≤ Vdd, -40 °C ≤ TA ≤ 85 °C, Differential inputs. Typical values represent most likely
parametric norms at Vdd = Vddo = 3.3 V, TA = 25 °C, at the Recommended Operation Conditions at the time of product
characterization and are not ensured). Test conditions are: Ftest = 100 MHz, Load = 5 pF in parallel with 50 Ω unless
otherwise stated.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Total Device Characteristics
Vdd
Core Supply Voltage
2.375
2.5 or
3.3
3.45
V
Vddo
Output Supply Voltage
1.425
1.5,1.8,
2.5, or
3.3
Vdd
V
No CLKin
16
25
Vddo = 3.3 V, Ftest = 100 MHz
24
Vddo = 2.5 V, Ftest = 100 MHz
20
Vddo = 2.5 V,
OE = High, Ftest = 100 MHz
5
Vddo= 3.3 V,
OE = High, Ftest = 100 MHz
7
OE = Low
0.1
OE = High @ 100 MHz
95
OE = Low
16
IVdd
IVddo[n]
IVdd + IVddo
Core Current
Current for Each Output
Total Device Current with Loads on all
outputs
mA
mA
mA
Power Supply Ripple Rejection (PSRR)
PSRR
Ripple Induced
Phase Spur Level
100 kHz, 100 mVpp
Ripple Injected on
Vdd, Vddo = 2.5 V
Outputs
Skew
tPD
tPD, PP
fCLKout
tRise
VCLKoutLow
Propagation Delay
CLKin to CLKout (2)
Part-to-part Skew
(2) (3)
Output Frequency
25
ps
0.85
1.4
2.2
ns
CL = 5 pF, RL = 50 Ω
Vdd = 2.5 V; Vddo = 1.5 V
1.1
1.8
2.8
ns
CL = 5 pF, RL = 50 Ω
Vdd = 3.3 V; Vddo = 3.3 V
0.35
ns
CL = 5 pF, RL = 50 Ω
Vdd = 2.5 V; Vddo = 1.5 V
0.6
ns
200
MHz
DC
Vdd = 3.3 V, Vddo = 1.8 V, CL = 10 pF
250
Vdd = 2.5 V, Vddo = 2.5 V, CL = 10 pF
275
Vdd = 3.3 V, Vddo = 3.3 V, CL = 10 pF
315
Output Low Voltage
Output High Voltage
RCLKout
Output Resistance
(1)
(2)
(3)
(4)
6
CL = 5 pF, RL = 50 Ω
Vdd = 3.3 V; Vddo = 3.3 V
(4)
Rise/Fall Time
RMS Additive Jitter
dBc
(1)
Measured between outputs,
referenced to CLKout0
(2)
VCLKoutHigh
tj
4
Output Skew
-44
ps
0.1
V
Vddo0.1
fCLKout = 156.25 MHz,
CMOS input slew rate ≥ 2 V/ns
CL = 5 pF, BW = 12 kHz to 20 MHz
50
ohm
30
fs
AC Parameters for CMOS are dependent upon output capacitive loading
Parameter is specified by design, not tested in production.
Part-to-part skew is calculated as the difference between the fastest and slowest tPD across multiple devices.
Specified by characterization.
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ELECTRICAL CHARACTERISTICS (continued)
(2.375 V ≤ Vdd ≤ 3.45 V, 1.425 ≤ Vddo ≤ Vdd, -40 °C ≤ TA ≤ 85 °C, Differential inputs. Typical values represent most likely
parametric norms at Vdd = Vddo = 3.3 V, TA = 25 °C, at the Recommended Operation Conditions at the time of product
characterization and are not ensured). Test conditions are: Ftest = 100 MHz, Load = 5 pF in parallel with 50 Ω unless
otherwise stated.
Symbol
Parameter
Test Conditions
VLow
Input Low Voltage
Min
Typ
Max
Units
Digital Inputs (OE, SEL0, SEL1)
VHigh
Input High Voltage
IIH
High Level Input Current
IIL
Low Level Input Current
Vdd = 2.5 V
1.3
Vdd = 3.3 V
1.6
50
IIH
High Level Input Current
VCLKin = Vdd
IIL
Low Level Input Current
VCLKin = 0 V
VIH
Input High Voltage
VIL
Input Low Voltage
VI_SE
VID
Differential Input
Common Mode Input Voltage
V
-5
CLKin0/0* and CLKin1/1* Input Clock Specifications,
VCM
0.4
Vdd = 2.5 V
5
(5) (6)
20
-20
GND
Single-Ended Input Voltage Swing
Differential Input Voltage Swing
(8)
uA
uA
Vdd
(7)
uA
V
VID = 150 mV
0.5
Vdd1.2
VID = 350 mV
0.5
Vdd1.1
VID = 800 mV
0.5
Vdd0.9
CLKinX driven single-ended (AC or DC
coupled), CLKinX* AC coupled to GND or
externally biased within VCM range
0.3
2
Vpp
CLKin driven differentially
0.15
1.5
V
DC
200
MHz
10
40
MHz
V
OSCin/OSCout Pins
fOSCin
Input Frequency
(9)
fXTAL
Crystal Frequency Input Range
COSCin
Shunt Capacitance
VIH
Input High Voltage
Single-Ended Input, OSCout floating
Fundamental Mode Crystal
ESR < 200 Ω ( fXtal ≤ 30 MHz )
ESR < 120 Ω ( fXtal > 30 MHz ) (10)
(9)
1
Single-Ended Input, OSCout floating
pF
2.5
V
(5)
(6)
See Differential Voltage Measurement Terminology for definition of VID and VOD.
Refer to application note AN-912 Common Data Transmission Parameters and their Definitions (literature number SNLA036) for more
information.
(7) When using differential signals with VCM outside of the acceptable range for the specified VID, the clock must be AC coupled.
(8) Parameter is specified by design, not tested in production.
(9) Specified by characterization.
(10) The ESR requirements stated are what is necessary in order to ensure that the Oscillator circuitry has no start up issues. However,
lower ESR values for the crystal might be necessary in order to stay below the maximum power dissipation requirements for that crystal.
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TYPICAL PERFORMANCE CHARACTERISTICS
Unless otherwise specified: Vdd = Vddo = 3.3 V, TA = 20 °C, CL = 5 pF, CLKin driven differentially, input slew rate ≥ 2 V/ns.
NOISE FLOOR (dBc/Hz)
RMS JITTER (fs)
RMS Jitter vs. CLKin Slew Rate @ 100 MHz
500
-40 C
Fclk-100 MHz
25 C
450
Int. BW=1-20 MHz
85 C
CLKin Source
400
350
300
250
200
150
100
Noise Floor vs. CLKin Slew Rate @ 100 MHz
-140
-40 C
Fclk=100 MHz
25 C
Foffset=20 MHz
85
C
-145
CLKin Source
-150
-155
-160
-165
50
-170
0
0.5
1.0
1.5
2.0
2.5
3.0
DIFFERENTIAL INPUT SLEW RATE (V/ns)
Figure 3.
0.5
1.0
1.5
2.0
2.5
3.0
DIFFERENTIAL INPUT SLEW RATE (V/ns)
Figure 2.
LVCMOS Phase Noise @ 100 MHz
LVCMOS Output Swing vs. Frequency
3.5
Vddo=1.5 V
Vddo=1.8 V
Vddo=2.5 V
Vddo=3.3 V
OUTPUT SWING (V)
3.0
LVCMOS Output
CLKin Source
2.5
Rterm=50
2.0
1.5
1.0
0.5
0.0
0
Test conditions: LVCMOS Input, slew rate ≥ 2 V/ns, CL = 5 pF in
parallel with 50 Ω, BW = 1 MHz to 20 MHz
Figure 4.
200
400
600
800
FREQUENCY (MHz)
1000
Figure 5.
Iddo per Output vs Frequency
CURRENT (mA)
15
Vddo = 1.5 V
Vddo = 1.8 V
Vddo = 2.5 V
Vddo = 3.3 V
Cload = 10 pF
10
5
0
0
6
50
100
150
200
FREQUENCY (MHz)
Figure 6.
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MEASUREMENT DEFINITIONS
Differential Voltage Measurement Terminology
The differential voltage of a differential signal can be described by two different definitions causing confusion
when reading datasheets or communicating with other engineers. This section will address the measurement and
description of a differential signal so that the reader will be able to understand and discern between the two
different definitions when used.
The first definition used to describe a differential signal is the absolute value of the voltage potential between the
inverting and non-inverting signal. The symbol for this first measurement is typically VID or VOD depending on if
an input or output voltage is being described.
The second definition used to describe a differential signal is to measure the potential of the non-inverting signal
with respect to the inverting signal. The symbol for this second measurement is VSS and is a calculated
parameter. Nowhere in the IC does this signal exist with respect to ground, it only exists in reference to its
differential pair. VSS can be measured directly by oscilloscopes with floating references, otherwise this value can
be calculated as twice the value of VOD as described in the first section
Figure 7 illustrates the two different definitions side-by-side for inputs and Figure 8 illustrates the two different
definitions side-by-side for outputs. The VID and VOD definitions show VA and VB DC levels that the non-inverting
and inverting signals toggle between with respect to ground. VSS input and output definitions show that if the
inverting signal is considered the voltage potential reference, the non-inverting signal voltage potential is now
increasing and decreasing above and below the non-inverting reference. Thus the peak-to-peak voltage of the
differential signal can be measured.
VID and VOD are often defined in volts (V) and VSS is often defined as volts peak-to-peak (VPP).
VID Definition
VSS Definition for Input
Non-Inverting Clock
VIH
VCM
VSS
VID
VIL
Inverting Clock
VSS = 2· VID
VID = | VIH ± VIL |
GND
Figure 7. Two Different Definitions for Differential Input Signals
VOD Definition
VSS Definition for Output
Non-Inverting Clock
VOH
VOS
VOL
VSS
VOD
Inverting Clock
VOD = | VOH - VOL |
VSS = 2· VOD
GND
Figure 8. Two Different Definitions for Differential Output Signals
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FUNCTIONAL DESCRIPTION
The LMK00101 is a 10 output LVCMOS clock fanout buffer with low additive jitter that can operate up to 200
MHz. It features a 3:1 input multiplexer with a crystal oscillator input, single supply or dual supply (lower power)
operation, and pin-programmable device configuration. The device is offered in a 32-pin WQFN package.
Vdd and Vddo Power Supplies
Separate core and output supplies allow the output buffers to operate at the same supply as the Vdd core supply
(3.3 V or 2.5 V) or from a lower supply voltage (3.3 V, 2.5 V, 1.8 V, or 1.5 V). Compared to single-supply
operation, dual supply operation enables lower power consumption and output-level compatibility.
Bank A (CLKout0 to CLKout4) and Bank B (CLKout5 to CLKout9) may also be operated at different Vddo
voltages, provided neither Vddo voltage exceeds Vdd.
NOTE
Care should be taken to ensure the Vddo voltage does not exceed the Vdd voltage to
prevent turning-on the internal ESD protection circuitry.
DO NOT DISCONNECT OR GROUND ANY OF THE Vddo PINS as the Vddo pins are
internally connected within an output bank.
CLOCK INPUTS
The LMK00101 has three different inputs, CLKin0/CLKin0*, CLKin1/CLKin1*, and OSCin that can be driven in
different manners that are described in the following sections.
SELECTION OF CLOCK INPUT
Clock input selection is controlled using the SEL0 and SEL1 pins as shown in Table 1. Refer to Driving the Clock
Inputs for clock input requirements. When CLKin0 or CLKin1 is selected, the crystal circuit is powered down.
When OSCin is selected, the crystal oscillator will start-up and its clock will be distributed to all outputs. Refer to
Crystal Interface for more information. Alternatively, OSCin may be driven by a single ended clock, up to 200
MHz, instead of a crystal.
Table 1. Input Selection
SEL1
SEL0
Input
0
0
CLKin0, CLKin0*
0
1
CLKin1, CLKin1*
1
X
OSCin
(Crystal Mode)
CLKin/CLKin* Pins
The LMK00101 has two differential inputs (CLKin0/CLKin0* and CLKin1/CLKin1*) that can be driven singleended or differentially. They can accept AC or DC coupled 3.3V/2.5V LVPECL, LVDS, or other differential and
singled ended signals that meet the input requirements under the “CLKin0/0* and CLKin1/1* Input Clock
Specifications” portion of the ELECTRICAL CHARACTERISTICS and (1). Refer to Driving the Clock Inputs for
more details on driving the LMK00101 inputs.
In the event that a Crystal mode is not selected and the CLKin pins do not have an AC signal applied to them,
Table 2 following will be the state of the outputs.
(1)
8
When using differential signals with VCM outside of the acceptable range for the specified VID, the clock must be AC coupled.
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Table 2. CLKinX Input vs. Output States
CLKinX
CLKinX*
Output State
Open
Open
Logic Low
Logic Low
Logic Low
Logic Low
Logic High
Logic Low
Logic High
Logic Low
Logic High
Logic Low
OSCin/OSCout Pins
The LMK00101 has a crystal oscillator which will be powered up when OSCin is selected. Alternatively, OSCin
may be driven by a single ended clock, up to 200 MHz, instead of a crystal. Refer to Crystal Interface for more
information.
If Crystal mode is selected and the pins do not have an AC signal applied to them, Table 3 will be the state of the
outputs. If Crystal mode is selected an open state is not allowed on OSCin, as the outputs may oscillate due to
the crystal oscillator circuitry.
Table 3. OSCin Input vs. Output States
OSCin
Output State
Open
Not Allowed
Logic Low
Logic High
Logic High
Logic Low
CLOCK OUTPUTS
The LMK00101 has 10 LVCMOS outputs.
Output Enable Pin
When the output enable pin is held High, the outputs are enabled. When it is held Low, the outputs are held in a
Low state as shown in Table 4.
Table 4. Output Enable Pin States
OE
Outputs
Low
Disabled (Hi-Z)
High
Enabled
The OE pin is synchronized to the input clock to ensure that there are no runt pulses. When OE is changed from
Low to High, the outputs will initially have an impedance of about 400 Ω to ground until the second falling edge of
the input clock. Starting with the second falling edge of the input clock, the outputs will buffer the input. If the OE
pin is taken from Low to High when there is no input clock present, the outputs will either go High or Low and
stay a that state; they will not oscillate. When the OE pin is taken from High to Low the outputs will become Low
after the second falling edge of the clock input and then will go to a Disabled (Hi-Z) state starting after the next
rising edge.
Using Less than Ten Outputs
Although the LMK00101 has 10 outputs, not all applications will require all of these. In this case, the unused
outputs should be left floating with a minimum copper length to minimize capacitance. In this way, this output will
consume minimal output current because it has no load.
NOTE
For best soldering practices, the minimum trace length should extend to include the pin
solder mask. This way during reflow, the solder has the same copper area as connected
pins. This allows for good, uniform fillet solder joints helping to keep the IC level during
reflow.
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APPLICATION INFORMATION
Driving the Clock Inputs
The LMK00101 has two differential inputs (CLKin0/CLKin0* and CLKin1/CLKin1*) that can accept AC or DC
coupled 3.3V/2.5V LVPECL, LVDS, and other differential and single ended signals that meet the input
requirements specified in ELECTRICAL CHARACTERISTICS. The device can accept a wide range of signals
due to its wide input common mode voltage range (VCM) and input voltage swing (VID)/dynamic range. AC
coupling may also be employed to shift the input signal to within the VCM range.
To achieve the best possible phase noise and jitter performance, it is recommended that the input have a high
slew rate of 2 V/ns(differential) or higher. Driving the input with a lower slew rate will degrade the noise floor and
jitter. For this reason, a differential input signal is recommended over single-ended because it typically provides
higher slew rate and common-mode noise rejection.
While it is recommended to drive the CLKin/CLKin* pair with a differential signal input, it is possible to drive it
with a single-ended clock provided it conforms to the Single-Ended Input specifications for CLKin pins listed in
the Electrical Characteristics. For large single-ended input signals, such as 3.3V or 2.5V LVCMOS, a 50 Ω load
resistor should be placed near the input for signal attenuation to prevent input overdrive as well as for line
termination to minimize reflections. The CLKin input has an internal bias voltage of about 1.4 V, so the input can
be AC coupled as shown in Figure 9. The output impedance of the LVCMOS driver plus Rs should be close to
50 Ω to match the characteristic impedance of the transmission line and load termination.
RS 0.1 PF
0.1 PF
50: Trace
50:
CMOS
Driver
LMK
Input
0.1 PF
Figure 9. Preferred Configuration: Single-Ended LVCMOS Input, AC Coupling, Near and Far End
Termination
A single-ended clock may also be DC coupled to CLKinX as shown in Figure 10. A 50-Ω load resistor should be
placed near the CLKinX input for signal attenuation and line termination. Because half of the single-ended swing
of the driver (VO,PP / 2) drives CLKinX, CLKinX* should be externally biased to the midpoint voltage of the
attenuated input swing ((VO,PP / 2) × 0.5). The external bias voltage should be within the specified input common
voltage (VCM) range. This can be achieved using external biasing resistors in the kΩ range (RB1 and RB2) or
another low-noise voltage reference. This will ensure the input swing crosses the threshold voltage at a point
where the input slew rate is the highest.
CMOS
Driver
VO,PP
Rs
VO,PP/2
VCC
50: Trace
VBB ~ (VO,PP/2) x 0.5
50:
LMK
Input
RB1
VCC
RB2
0.1 PF
Figure 10. Single-Ended LVCMOS Input, DC Coupling with Common Mode Biasing
10
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If the crystal oscillator circuit is not used, it is possible to drive the OSCin input with an single-ended external
clock as shown in Figure 11. The input clock should be AC coupled to the OSCin pin, which has an internally
generated input bias voltage, and the OSCout pin should be left floating. While OSCin provides an alternative
input to multiplex an external clock, it is recommended to use either differential input (CLKinX) since it offers
higher operating frequency, better common mode, improved power supply noise rejection, and greater
performance over supply voltage and temperature variations.
0.1 PF
50: Trace
OSCin
OSCout
LMK00101
RS 0.1 PF
50:
CMOS
Driver
Figure 11. Driving OSCin with a Single-Ended External Clock
Crystal Interface
C1
XTAL
RLIM
OSCin
OSCout
LMK00101
The LMK00101 has an integrated crystal oscillator circuit that supports a fundamental mode, AT-cut crystal. The
crystal interface is shown in Figure 12.
C2
Figure 12. Crystal Interface
The load capacitance (CL) is specific to the crystal, but usually on the order of 18 to 20 pF. While CL is specified
for the crystal, the OSCin input capacitance (CIN = 1 pF typical) of the device and PCB stray capacitance (CSTRAY
~ 1 to 3 pF) can affect the discrete load capacitor values, C1 and C2. For the parallel resonant circuit, the discrete
capacitor values can be calculated as follows:
CL = (C1 * C2) / (C1 + C2) + CIN + CSTRAY
(1)
Typically, C1 = C2 for optimum symmetry, so Equation 1 can be rewritten in terms of C1only:
CL = C12 / (2 * C1 ) + CIN + CSTRAY
(2)
Finally, solve for C1:
C1 = (CL - CIN - CSTRAY) * 2
(3)
ELECTRICAL CHARACTERISTICS provides crystal interface specifications with conditions that ensure start-up
of the crystal, but it does not specify crystal power dissipation. The designer will need to ensure the crystal power
dissipation does not exceed the maximum drive level specified by the crystal manufacturer. Overdriving the
crystal can cause premature aging, frequency shift, and eventual failure. Drive level should be held at a sufficient
level necessary to start-up and maintain steady-state operation.
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The power dissipated in the crystal, PXTAL, can be computed by:
PXTAL = IRMS2 * RESR * (1 + C0 / CL)2
Where:
•
•
•
•
IRMS is the RMS current through the crystal.
RESR is the maximum equivalent series resistance specified for the crystal.
CL is the load capacitance specified for the crystal.
C0 is the minimum shunt capacitance specified for the crystal.
(4)
IRMS can be measured using a current probe (e.g. Tektronix CT-6 or equivalent) placed on the leg of the crystal
connected to OSCout with the oscillation circuit active.
As shown in Figure 12, an external resistor, RLIM, can be used to limit the crystal drive level if necessary. If the
power dissipated in the selected crystal is higher than the drive level specified for the crystal with RLIM shorted,
then a larger resistor value is mandatory to avoid overdriving the crystal. However, if the power dissipated in the
crystal is less than the drive level with RLIM shorted, then a zero value for RLIM can be used. As a starting point, a
suggested value for RLIM is 1.5 kΩ
Power Supply Ripple Rejection
In practical system applications, power supply noise (ripple) can be generated from switching power supplies,
digital ASICs or FPGAs, etc. While power supply bypassing will help filter out some of this noise, it is important to
understand the effect of power supply ripple on the device performance. When a single-tone sinusoidal signal is
applied to the power supply of a clock distribution device, such as LMK00101, it can produce narrow-band phase
modulation as well as amplitude modulation on the clock output (carrier). In the singleside band phase noise
spectrum, the ripple-induced phase modulation appears as a phase spur level relative to the carrier (measured in
dBc).
For the LMK00101, power supply ripple rejection (PSRR), was measured as the single-sideband phase spur
level (in dBc) modulated onto the clock output when a ripple signal was injected onto the Vddo supply. The PSRR
test setup is shown in Figure 13.
Ripple
Source
Vcco
Clock
Source
Power
Supplies
Bias-Tee
IN+
IC
IN-
Vcc
OUT
Limiting
Amp
DUT Board
OUT
Phase Noise
Analyzer
Scope
Measure 100 mVPP
ripple on Vddo at IC
Measure single
sideband phase spur
power in dBc
Figure 13. PSRR Test Setup
A signal generator was used to inject a sinusoidal signal onto the Vddo supply of the DUT board, and the peak-topeak ripple amplitude was measured at the Vddo pins of the device. A limiting amplifier was used to remove
amplitude modulation on the differential output clock and convert it to a single-ended signal for the phase noise
analyzer. The phase spur level measurements were taken for clock frequencies of 100 MHz under the following
power supply ripple conditions:
• Ripple amplitude: 100 mVpp on Vddo = 2.5 V
• Ripple frequency: 100 kHz
Assuming no amplitude modulation effects and small index modulation, the peak-to-peak deterministic jitter (DJ)
can be calculated using the measured single-sideband phase spur level (PSRR) as follows:
DJ (ps pk-pk) = [(2 * 10(PSRR/20)) / (π * fclk)] * 1012
12
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Power Supply Bypassing
The Vdd and Vddo power supplies should have a high frequency bypass capacitor, such as 100 pF, placed very
close to each supply pin. Placing the bypass capacitors on the same layer as the LMK00101 improves input
sensitivity and performance. All bypass and decoupling capacitors should have short connections to the supply
and ground plane through a short trace or via to minimize series inductance.
Thermal Management
For reliability and performance reasons the die temperature should be limited to a maximum of 125 °C. That is,
as an estimate, TA (ambient temperature) plus device power consumption times θJA should not exceed 125 °C.
The package of the device has an exposed pad that provides the primary heat removal path as well as excellent
electrical grounding to a printed circuit board. To maximize the removal of heat from the package a thermal land
pattern including multiple vias to a ground plane must be incorporated on the PCB within the footprint of the
package. The exposed pad must be soldered down to ensure adequate heat conduction out of the package.
A recommended land and via pattern is shown in Figure 14. More information on soldering WQFN (formerly
referred to as LLP) packages and gerber footprints can be obtained: http://www.ti.com/packaging
To minimize junction temperature it is recommended that a simple heat sink be built into the PCB (if the ground
plane layer is not exposed). This is done by including a copper area of about 2 square inches on the opposite
side of the PCB from the device. This copper area may be plated or solder coated to prevent corrosion but
should not have conformal coating (if possible), which could provide thermal insulation. The vias shown in
Figure 14 should connect these top and bottom copper layers and to the ground layer. These vias act as “heat
pipes” to carry the thermal energy away from the device side of the board to where it can be more effectively
dissipated.
3.1 mm, min
0.2 mm, typ
1.27 mm,
typ
Figure 14. Recommended Land and Via Pattern
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REVISION HISTORY
Changes from Revision B (April 2013) to Revision C
Page
•
Deleted optional from CLKin1* pin description. Changed complimentary to complementary. ............................................. 2
•
Added not tested in production to specified by design table note. ....................................................................................... 4
•
Added max limit to Output Skew parameter and added tablenote to parameter in Electrical Characteristics Table. .......... 4
•
Changed typical value for both conditions of Propagation Delay in the Electrical Characteristics Table ............................ 4
•
Added Min/Max limits to both conditions of Propagation Delay parameter in Electrical Characteristics Table. .................. 4
•
Changed both Max values of each Part-to-part Skew condition in Electrical Characteristics Table. ................................... 4
•
Changed unit value for the first condition of Part-to-part Skew from ps to ns in the Electrical Characteristics Table. ........ 4
•
Changed the Typ value of each Rise/Fall Time condition in the Electrical Characteristics Table ....................................... 4
•
Added not tested in production to specified by design table note. ....................................................................................... 5
•
Deleted VIL table note. ......................................................................................................................................................... 5
•
Added VI_SE parameter and spec limits with corresponding table note to Electrical Characteristics Table. ........................ 5
•
Changed third paragraph in Driving the Clock Inputs section to include CLKin* and LVCMOS text. Removed extra
references to other figures. Revised to better correspond with information in Electrical Characteristics Table. ............... 10
•
Deleted Figure 10 (Near End termination) and Figure 11 (Far End termination) from Driving the Clock Inputs section ... 10
•
Changed bypass cap text with signal attenuation text in fourth paragraph of Driving the Clock Inputs. ........................... 10
•
Changed Single-Ended LVCMOS Input, DC Coupling with Common Mode Biasing image with revised graphic. ............ 10
•
Deleted two sentences in reference to two deleted images. .............................................................................................. 11
14
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PACKAGE OPTION ADDENDUM
www.ti.com
3-May-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LMK00101SQ/NOPB
ACTIVE
WQFN
RTV
32
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
K00101
LMK00101SQE/NOPB
ACTIVE
WQFN
RTV
32
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
K00101
LMK00101SQX/NOPB
ACTIVE
WQFN
RTV
32
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
K00101
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE MATERIALS INFORMATION
www.ti.com
13-Jul-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
LMK00101SQ/NOPB
WQFN
RTV
32
LMK00101SQE/NOPB
WQFN
RTV
LMK00101SQX/NOPB
WQFN
RTV
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
1000
178.0
12.4
5.3
5.3
1.3
8.0
12.0
Q1
32
250
178.0
12.4
5.3
5.3
1.3
8.0
12.0
Q1
32
2500
330.0
12.4
5.3
5.3
1.3
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
13-Jul-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMK00101SQ/NOPB
WQFN
RTV
32
1000
210.0
185.0
35.0
LMK00101SQE/NOPB
WQFN
RTV
32
250
210.0
185.0
35.0
LMK00101SQX/NOPB
WQFN
RTV
32
2500
367.0
367.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
RTV0032A
SQA32A (Rev B)
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