TIGER ELECTRONIC CO.,LTD FFM101 - FFM107 1.0A Surface Mount Fast Recovery Rectifiers Features SMA/DO-214AC Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 0. 181( 4. 60) 0. 161( 4. 10) Low profile surface mounted application in order to optimize board space. 0. 108( 2.75) 0.096( 2.45) 0. 063(1.60) 0. 051(1.30) Tiny plastic SMD package. High current capability. Fast switching for high efficiency. Glass passivated chip junction. Lead-free parts meet RoHS requirments. 0.209( 5. 30) 0. 193(4.90) High surge current capability. 0.012(0.30) 0. 006(0.15) 0.096(2.45) 0.078(2.00) 0.059( 1. 50) 0. 035( 0. 90) Mechanical data Case : Molded plastic, SMA Polarity : Indicated by cathode band Mounting Position : Any Weight : Approximated 0.01gram 0.008(0.20) 0. 002(0.05) Dimensions in inches and(millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oC ambient temperature unless otherwise specified. Maximum ratings PARAMETER CONDITIONS Forward rectified current See Fig.2 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 OC Reverse current MAX. UNIT IO 1.0 A I FSM 30 A Symbol V R = V RRM T A = 100 C Thermal resistance Junction to ambient Diode junction capacitance f=1MHz and applied 4V DC reverse voltage Storage temperature V RMS*2 (V) *3 VR (V) FFM101 50 35 50 FFM102 100 70 100 FFM103 200 140 200 FFM104 400 280 400 FFM105 600 420 600 FFM106 800 560 800 FFM107 1000 700 1000 *4 VF (V) *5 T RR (nS) 5.0 Operating temperature T J, ( OC) uA 100 R èJA 42 CJ 15 T STG *1 V RRM (V) TYP. IR O SYMBOLS MIN. -65 O pF +175 *3 Continuous reverse voltage 1.30 -55 to +150 250 *4 Maximum forward voltage *5 Reverse recovery time 500 O C *1 Repetitive peak reverse voltage *2 RMS voltage 150 C/W FFM101 - FFM107 1.0A Surface Mount Fast Recovery Rectifiers Rating and characteristic curves (FFM101 THRU FFM107) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 3.0 1.0 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 20 40 TJ=25 C 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) Pulse Width 300us 1% Duty Cycle 0.1 .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) PEAK FORWAARD SURGE CURRENT,(A) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 Sine Wave 20 JEDEC method 10 0 1 5 2. Rise Time= 10ns max., Source Impedance= 50 ohms. | | | | | | | | 0 -0.25A 100 FIG.5-TYPICAL JUNCTION CAPACITANCE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. +0.5A 50 10 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) trr 8.3ms Single Half TJ=25 C (+) 1W NONINDUCTIVE 35 JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 50 30 25 20 15 10 5 0 -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100