Zetex FZT1047A Npn silicon planar medium power high gain transistor Datasheet

SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
FZT1047A
ISSUE 1 - AUGUST 1997
FEATURES
*
*
*
*
*
*
VCEO = 10V
5 Amp Continuous Current
20 Amp Pulse Current
Low Saturation Voltage
High Gain
Extremely Low Equivalent On-resistance; RCE(sat) = 44mΩ at 5A
C
E
C
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
35
V
Collector-Emitter Voltage
V CEO
10
V
Emitter-Base Voltage
V EBO
5
V
Peak Pulse Current
I CM
20
A
Continuous Collector Current
IC
5
A
Base Current
IB
500
mA
Power Dissipation at T amb=25°C
P tot
2.5
W
Operating and Storage Temperature
Range
T j:T stg
-55 to +150
°C
FZT1047A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VALUE
PARAMETER
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
35
65
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
35
55
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
10
16
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
35
60
V
IC=100µA, VEB=1V
5
8.9
V
IE=100µA
Emitter-Base Breakdown V(BR)EBO
Voltage
Collector Cut-Off Current
ICBO
0.3
10
nA
VCB=20V
Emitter Cut-Off Current
IEBO
0.3
10
nA
VEB=4V
Collector Emitter Cut-Off
Current
ICES
0.3
10
nA
VCES=20V
Collector-Emitter
Saturation Voltage
VCE(sat)
25
50
140
220
40
70
200
350
mV
mV
mV
mV
IC=0.5A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=15mA*
IC=5A, IB=25mA*
Base-Emitter
Saturation Voltage
VBE(sat)
925
1000
mV
IC=5A, IB=25mA*
Base-Emitter Turn-On
Voltage
VBE(on)
890
975
mV
IC=5A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
280
290
300
200
60
430
440
450
330
110
Transition Frequency
fT
150
Output Capacitance
Cobo
85
ton
toff
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=5A, VCE=2V*
IC=20A, VCE=2V*
1200
MHz
IC=50mA, VCE=10V
f=50MHz
pF
VCB=10V, f=1MHz
130
ns
IC=4A, IB=40mA, VCC=10V
230
ns
IC=4A, IB=±40mA,
VCC=10V
110
Switching Times
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FZT1047A
TYPICAL CHARACTERISTICS
1
+25°C
IC/IB=100
0.6
VCE(sat) - (V)
VCE(sat) - (V)
0.8
0.6
IC/IB=200
IC/IB=100
IC/IB=50
0.4
0.4
+150°C
+50°C
+25°C
-55°C
0.2
0.2
0
0
1m
10m
100m
1
10
1m
100
10m
IC -
IC - Collector Current (A)
VCE(sat) v IC
+100°C
+25°C
-55°C
500
400
300
200
0
100
IC/IB=100
0.8
0.6
-55°C
+25°C
+100°C
+150°C
0.4
0
1m
10m
IC -
100m
1
10
10m
1m
100
Collector Current (A)
hFE v IC
100m
1
10
100
IC - Collector Current (A)
VBE(sat) v IC
100
1.5
IC - Collector Current (A)
VCE=2V
1.2
VBE(on) - (V)
10
0.2
100
0.9
0.6
-55°C
+25°C
+100°C
+150°C
0.3
0
1
1
VBE(sat) - (V)
hFE - Typical Gain
1.2
VCE=2V
600
100m
Collector Current (A)
VCE(sat) v IC
1m
10m
100m
1
10
IC - Collector Current (A)
VBE(on) v IC
100
10
1
DC
1s
100ms
10ms
1ms
100us
100m
100m
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
FZT1047A
SPICE PARAMETERS
*ZETEX
*
.MODEL
+
+
+
+
*
FZT1047A Spice model Last revision 18/03/97
FZT1047A NPN IS=9.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120
ISE=2.6E-13 NE=1.38 NR=1.0 BR=400 IKR=5 VAR=15
ISC=8E-13 NC=1.4 RB=0.1 RE=0.017 RC=0.010
CJC=195.4E-12 CJE=540.4E-12 MJC=0.257 MJE=0.359
VJC=0.390 VJE=0.753 TF=450E-12 TR=1.2E-9
 1997 ZETEX PLC
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no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
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Zetex plc 1997
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