FMY5 Transistor General purpose(dual transistors) FMY5 zExternal dimensions (Unit : mm) (4) 2.9 1.1 1.9 0.95 0.95 (1) (2) (4) (3) 0.8 (5) (5) 0.3 0.15 0.3Min. zCircuit diagram (3) SMT5 1.6 2.8 zFeatures 1) Both the 2SA1514K and 2SC3906K chips in an SMT package. 2) PNP and NPN chips are connecter in a common emitter. Each lead has same dimensions Tr2 (2) Tr1 (1) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit VCBO VCEO VEBO IC 120 120 5 50 V V V mA Power dissipation Junction temperature PC Tj 300(TOTAL) 150 Storage temperature Tstg −55 to +150 mW °C °C Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ∗ ∗ 200mW per element must not be exceeded. PNP type negative symbols have been omitted. zPackage, marking, and packaging specifications Part No. Package FMY5 SMT5 Marking Y5 Code Basic ordering unit (pieces) T148 3000 Rev.B 1/4 FMY5 Transistor zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 120 − − V Collector-emitter breakdown voltage BVCEO 120 − − V IC = 1/−1mA Emitter-base breakdown voltage BVEBO 5 − − V IE = 50/−50µA Collector cutoff current ICBO − − 0.5 µA VCB = 100/−100V Emitter cutoff curren IEBO − − 0.5 µA VEB = 4/−4V hFE 180 − 820 − VCE(sat) − 0.5 V fT − − 140 − MHz Cob − 3/4 − pF DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Conditions IC = 50/−50µA VCE = 6/−6V, IC = 2/−2mA IC = 10/−10mA, IB = 1/−1mA ∗ VCE = 12/−12V, IE = −2/2mA, f = 100MHz VCB = 12/−12V, IE = 0A, f = 1MHz Note:The slash denotes NPN/PNP. PNP type negative symbols have been omitted. ∗Transition frequency of the device. z Electrical characteristics curves Tr1 −50 −8 −20.0 −17.5 −6 −15.0 −12.5 −4 −10.0 −7.5 −5.0 −2 −2.5µA IB=0 −4 0 −8 −12 −16 −20 −10 −5 −2 −1 −0.5 0 IC/IB=50/1 −0.1 20/1 10/1 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter saturation voltage vs. collector current −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 100 −0.2 −1.6 Fig.2 Ground emitter propagation characteristics TRANSITION FREQUENCY : fT (MHZ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −0.2 200 Ta=25°C VCE= −6V 500 200 100 50 0.5 1 2 5 10 20 EMITTER CURRENT : IE (mA) Fig.5 Transition frequency vs. emitter current 50 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Ta=25°C −0.5 −5V VCE= −1V 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics 500 −0.2 −0.1 −20 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) −22.5 Ta=25°C Ta=25°C VCE= −6V −25.0 Fig.3 DC current gain vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25°C V −3 COLLECTOR CURRENT : IC (mA) −10 20 Ta=25°C f=1MHZ IE=0A 10 Cob 5 2 1 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance vs. collector-base voltage Rev.B 2/4 FMY5 Transistor EMITTER INPUT CAPACITANCE : Cib (pF) 20 Ta=25°C f=1MHZ IC=0A Cib 10 5 2 1 −0.5 −1 −2 −5 −10 −20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Emitter input capacitance vs. emitter-base voltage Tr2 50 8 20.0 17.5 6 15.0 12.5 10.0 4 7.5 5.0 2 2.5 IB=0µA 4 0 8 Ta=25°C 16 20 12 20 10 5 2 1 0.5 0.2 IC/IB=50 0.1 0.05 20 10 0.02 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.11 Collector-emitter saturation voltage vs. collector current ( ) 3V 200 VCE=1V 100 50 0.1 0 0.2 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 0.5 Ta=100°C 0.1 25°C −40°C 0.05 0.02 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.12 Collector-emitter saturation voltage vs. collector current ( ) 5 10 20 50 VCE=6V Ta=25°C IC/IB=10 0.2 2 Fig.10 DC current gain vs. collector current Fig.9 Ground emitter propagation characteristics 0.5 1 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Ta=25°C 0.5 5V 500 0.2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Ground emitter output characteristics Ta=25°C Ta=25°C VCE=6V TRANSITION FREQUENCY : fT (MHz) 22.5 DC CURRENT GAIN : hFE 25.0 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 10 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IE (mA) Fig.13 Transition frequency vs. emitter current Rev.B 3/4 FMY5 Ta=25°C f=1MHz IE=0A 20 10 5 2 1 −0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.14 Collector output capacitance vs. collector-base voltage EMITTER INPUT CAPACITANCE : Cib(pF) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) Transistor Ta=25°C f=1MHz IC=0A 20 10 5 2 1 −0.5 1 2 5 10 20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.15 Emitter input capacitance vs. emitter-base voltage Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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