IDT IDT71V2558SA133BGI 128k x 36, 256k x 18 3.3v synchronous zbt srams 2.5v i/o, burst counter pipelined output Datasheet

128K x 36, 256K x 18
3.3V Synchronous ZBT™ SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs
Features
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IDT71V2556S
IDT71V2558S
IDT71V2556SA
IDT71V2558SA
cycle, and two cycles later the associated data cycle occurs, be it read
or write.
The IDT71V2556/58 contain data I/O, address and control signal
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V2556/58 to
be suspended as long as necessary. All synchronous inputs are ignored
when (CEN) is high and the internal device registers will hold their previous
values.
There are three chip enable pins (CE1, CE2, CE2) that allow the user
to deselect the device when desired. If any one of these three are not
asserted when ADV/LD is low, no new memory operation can be initiated.
However, any pending data transfers (reads or writes) will be completed.
The data bus will tri-state two cycles after chip is deselected or a write is
initiated.
The IDT71V2556/58 has an on-chip burst counter. In the burst mode,
the IDT71V2556/58 can provide four cycles of data for a single address
presented to the SRAM. The order of the burst sequence is defined by the
LBO input pin. The LBO pin selects between linear and interleaved burst
sequence. The ADV/LD signal is used to load a new external address
(ADV/LD = LOW) or increment the internal burst counter (ADV/LD =
HIGH).
The IDT71V2556/58 SRAMs utilize IDT's latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
128K x 36, 256K x 18 memory configurations
Supports high performance system speed - 200 MHz
(3.2 ns Clock-to-Data Access)
ZBTTM Feature - No dead cycles between write and read
cycles
Internally synchronized output buffer enable eliminates the
need to control OE
W (READ/WRITE) control pin
Single R/W
Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
BW1 - BW4) control (May tie active)
Individual byte write (BW
Three chip enables for simple depth expansion
3.3V power supply (±5%), 2.5V I/O Supply (VDDQ)
Optional - Boundary Scan JTAG Interface (IEEE 1149.1
complaint)
Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA)
Description
The IDT71V2556/58 are 3.3V high-speed 4,718,592-bit (4.5 Megabit) synchronous SRAMS. They are designed to eliminate dead bus cycles
when turning the bus around between reads and writes, or writes and
reads. Thus, they have been given the name ZBTTM, or Zero Bus
Turnaround.
Address and control signals are applied to the SRAM during one clock
Pin Description Summary
A0-A17
Address Inputs
Input
Synchronous
CE1, CE2, CE2
Chip Enables
Input
Synchronous
OE
Output Enable
Input
Asynchronous
R/ W
Read/Write Signal
Input
Synchronous
CEN
Clock Enable
Input
Synchronous
BW1, BW2, BW3, BW4
Individual Byte Write Selects
Input
Synchronous
CLK
Clock
Input
N/A
ADV/ LD
Advance burst address / Load new address
Input
Synchronous
LBO
Linear / Interleaved Burst Order
Input
Static
TMS
Test Mode Select
Input
Synchronous
TDI
Test Data Input
Input
Synchronous
TCK
Test Clock
Input
N/A
TDO
Test Data Output
Output
Synchronous
TRST
JTAG Reset (Optional)
Input
Asynchronous
ZZ
Sleep Mode
Input
Synchronous
I/O0-I/O31, I/OP1-I/OP4
Data Input / Output
I/O
Synchronous
VDD, VDDQ
Core Power, I/O Power
Supply
Static
VSS
Ground
Supply
Static
4875 tbl 01
1
©2004 Integrated Device Technology, Inc.
OCTOBER 2004
DSC-4875/08
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Pin Definitions(1)
Symbol
Pin Function
I/O
Active
Description
A0-A17
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a combination of the rising edge of
CLK, ADV/LD low, CEN low, and true chip enables.
ADV/LD
Advance / Load
I
N/A
ADV/LD is a synchronous input that is used to load the internal reg isters with new address and control
when it is sampled low at the rising edge of clock with the chip selected. When ADV/ LD is low with the
chip deselected, any burst in progress is terminated. When ADV/LD is sampled high then the internal
burst counter is advanced for any burst that was in progress. The external addresses are ignored
when ADV/LD is sampled high.
R/W
Read / Write
I
N/A
R/W signal is a synchronous input that identifies whether the current load cycle initiated is a Read or
Write access to the memory array. The data bus activity for the current cycle takes place two clock
cycles later.
CEN
Clock Enable
I
LOW
Synchronous Clock Enable Input. When CEN is sampled high, all other synchronous inputs, including
clock are ignored and outputs remain unchanged. The effect of CEN sampled high on the device
outputs is as if the low to high clock transition did not occur. For normal operation, CEN must be
sampled low at rising edge of clock.
BW 1-BW 4
Individual Byte
Write Enables
I
LOW
Synchronous byte write enables. Each 9-bit byte has its own active low byte write enable. On load
write cycles (When R/W and ADV/LD are sampled low) the appropriate byte write signal (BW 1-BW 4)
must be valid. The byte write signal must also be valid on each cycle of a burst write. Byte Write
signals are ignored when R/W is sampled high. The appropriate byte(s) of data are written into the
device two cycles later. BW 1-BW 4 can all be tied low if always doing write to the entire 36-bit word.
CE1, CE2
Chip Enables
I
LOW
Sy nchronous active low chip enable. CE1 and CE2 are used with CE2 to enable the IDT71V2556/58.
(CE1 or CE2 sampled high or CE 2 sampled low) and ADV/LD low at the rising edge of clock, initiates a
deselect cycle. The ZBTTM has a two cycle deselect, i.e., the data bus will tri-state two clock cycles
after deselect is initiated.
CE2
Chip Enable
I
HIGH
Synchronous active high chip enable. CE2 is used with CE1 and CE2 to enable the chip. CE 2 has
inverted polarity but otherwise identical to CE1 and CE2.
CLK
Clock
I
N/A
This is the clock input to the IDT71V2556/58. Except for OE, all timing referenc es for the device are
made with respect to the rising edge of CLK.
I/O0-I/O31
I/OP1-I/OP4
Data Input/Output
I/O
N/A
Synchronous data input/output (I/O) pins. Both the data input path and data output path are registered
and triggered by the rising edge of CLK.
LBO
Linear Burst Order
I
LOW
Burst order selection input. When LBO is high the Interleaved burst sequence is selected. When LBO
is low the Linear burst sequence is selected. LBO is a static input and it must not change during
device operation.
OE
Output Enable
I
LOW
Asynchronous output enable. OE must be low to read data from the 71V2556/58. When OE is high the
I/O pins are in a high-impedance state. OE does not need to be actively controlled for read and write
cycles. In normal operation, OE can be tied low.
TMS
Test Mode Select
I
N/A
Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal
pullup.
TDI
Test Data Input
I
N/A
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has
an internal pullup.
TCK
Test Clock
I
N/A
Clock input of TAP controller. Each TAP event is clocked. Test inputs are captured on rising edge of
TCK, while test outputs are driven from the falling edge of TCK. This pin has an internal pullup.
TDO
Test Data Output
O
N/A
Serial output of registers placed between TDI and TDO. This output is active depe nding on the state of
the TAP controller.
TRST
JTAG Reset
(Optional)
I
LOW
Optional Asynchronous JTAG reset. Can be used to reset the TAP controller, but not required. JTAG
reset occurs automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not
used TRST can be left floating. This pin has an internal pullup.
ZZ
Sleep Mode
I
HIGH
Synchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the
IDT71V2556/2558 to its lowest power consumption level. Data retention is guaranteed in Sleep Mode.
This pin has an internal pulldown
VDD
Power Supply
N/A
N/A
3.3V core power supply.
VDDQ
Power Supply
N/A
N/A
2.5V I/O Supply.
VSS
Ground
N/A
N/A
Ground.
4875 tbl 02
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Functional Block Diagram
LBO
Address A [0:16]
128Kx36 BIT
MEMORY ARRAY
D
Q
Address
D
Q
Control
CE1, CE2, CE2
R/W
Input Register
CEN
ADV/LD
BWx
D
DI
DO
Control Logic
Q
Clk
Mux
Sel
D
Clk
Clock
Output Register
Q
Gate
OE
4875 drw 01a
TMS
TDI
TCK
TRST
JTAG
(SA Version)
TDO
(optional)
6.42
3
Data I/O [0:31],
I/O P[1:4]
,
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Functional Block Diagram
LBO
256x18 BIT
MEMORY ARRAY
Address A [0:17]
D
Q
Address
D
Q
Control
CE1, CE2, CE2
R/W
Input Register
CEN
ADV/LD
BWx
DI
D
Q
DO
Control Logic
Clk
Mux
Sel
D
Clk
Clock
Output Register
Q
Gate
OE
4875 drw 01b
TMS
TDI
TCK
TRST
JTAG
(SA Version)
TDO
(optional)
Recommended DC Operating
Conditions
Symbol
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.135
3.3
3.465
V
VDDQ
I/O Supply Voltage
2.375
2.5
2.625
V
VSS
Supply Voltage
0
0
0
V
1.7
____
VDD +0.3
1.7
____
VIH
VIH
VIL
Parameter
Input High Voltage - Inputs
Input High Voltage - I/O
Input Low Voltage
(1)
-0.3
____
(2)
VDDQ +0.3
0.7
V
V
V
4875 tbl 03
NOTES:
1. VIL (min.) = –1.0V for pulse width less than tCYC /2, once per cycle.
2. VIH (max.) = +6.0V for pulse width less than tCYC/2, once per cycle.
6.42
4
Data I/O [0:15],
I/O P[1:2]
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature(1)
VSS
VDD
VDDQ
Commercial
0°C to +70°C
0V
3.3V± 5%
2.5V± 5%
Industrial
-40°C to +85°C
0V
3.3V± 5%
2.5V± 5%
4875 tbl 05
NOTES:
1. TA is the "instant on" case temperature.
A6
A7
CE1
CE2
BW4
BW3
BW2
BW1
CE2
VDD
VSS
CLK
R/W
CEN
OE
ADV/LD
NC(2)
NC(2)
A8
A9
Pin Configuration — 128K x 36
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/OP3
I/O16
I/O17
VDDQ
VSS
I/O18
I/O19
I/O20
I/O21
VSS
VDDQ
I/O22
I/O23
VDD(1)
VDD
VDD(1)
VSS
I/O24
I/O25
VDDQ
VSS
I/O26
I/O27
I/O28
I/O29
VSS
VDDQ
I/O30
I/O31
I/OP4
1
80
2
79
3
78
77
4
5
6
76
75
7
74
8
73
9
72
71
10
11
70
12
69
13
68
14
67
15
66
16
65
64
17
18
19
63
62
20
61
21
60
22
59
23
24
58
57
25
56
26
55
27
54
53
28
29
52
51
30
I/OP2
I/O15
I/O14
VDDQ
VSS
I/O13
I/O12
I/O11
I/O10
VSS
VDDQ
I/O9
I/O8
VSS
VDD(1)
VDD
VSS/ZZ(3)
I/O7
I/O6
VDDQ
VSS
I/O5
I/O4
I/O3
I/O2
VSS
VDDQ
I/O1
I/O0
I/OP1
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
,
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A10
A11
A12
A13
A14
A15
A16
4875 drw 02
Top View
TQFP
NOTES:
1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long as the input voltage is ≥ VIH.
2. Pins 83 and 84 are reserved for future 8M and 16M respectively.
3. Pin 64 does not have to be connected directly to V SS as long as the input voltage is ≤ VIL; on the latest die revision this
pin supports ZZ (sleep mode).
6.42
5
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
CE2
NC
NC
BW2
BW1
CE2
VDD
VSS
CLK
R/W
CEN
OE
ADV/LD
NC(2)
NC(2)
A8
A9
A6
A7
CE1
Pin Configuration — 256K x 18
Symbol
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
NC
NC
1
80
2
79
3
VDDQ
VSS
NC
NC
I/O8
I/O9
VSS
VDDQ
I/O10
I/O11
VDD(1)
VDD
VDD(1)
VSS
I/O12
I/O13
VDDQ
VSS
I/O14
I/O15
I/OP2
NC
VSS
VDDQ
NC
NC
NC
4
78
77
5
6
76
75
7
74
8
73
9
10
72
71
11
70
12
69
13
68
14
67
15
66
16
65
64
17
18
19
63
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A10
NC
NC
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
VDD(1)
VDD
VSS/ZZ(3)
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
NC
VSS
VDDQ
NC
NC
NC
Commercial &
Industrial Values
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA
,
Rating
Commerical
Operating Temperature
-0 to +70
o
C
Industrial
Operating Temperature
-40 to +85
o
C
(7)
TBIAS
Temperature
Under Bias
-55 to +125
o
C
TSTG
Storage
Temperature
-55 to +125
o
C
PT
Power Dissipation
2.0
IOUT
DC Output Current
50
W
mA
4875 tbl 06
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A11
A12
A13
A14
A15
A16
A17
4875 drw 02a
Top View
TQFP
NOTES:
1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long
as the input voltage is ≥ VIH .
2. Pins 83 and 84 are reserved for future 8M and 16M respectively.
3. Pin 64 does not have to be connected directly to VSS as long as the input
voltage is ≤ VIL; on the latest die revision this pin supports ZZ (sleep
mode).
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed VDDQ during power
supply ramp up.
7. TA is the "instant on" case temperature.
100 TQFP Capacitance(1)
(TA = +25° C, f = 1.0MHz)
Symbol
Parameter(1)
CIN
Input Capacitance
CI/O
I/O Capacitance
Conditions
Max.
Unit
VIN = 3dV
5
pF
VOUT = 3dV
7
pF
119 BGA Capacitance(1)
(TA = +25° C, f = 1.0MHz)
Symbol
4875 tbl 07
165 fBGA Capacitance
(1)
(TA = +25° C, f = 1.0MHz)
Symbol
Parameter
(1)
CIN
Input Capacitance
CI/O
I/O Capacitance
Parameter(1)
CIN
Input Capacitance
CI/O
I/O Capacitance
Conditions
Max.
Unit
VIN = 3dV
7
pF
VOUT = 3dV
7
pF
4875 tbl 07a
Conditions
Max.
Unit
VIN = 3dV
TBD
pF
VOUT = 3dV
TBD
pF
4875 tb l 07b
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
6
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Pin Configuration — 128K x 36, 119 BGA
1
2
3
4
5
6
7
A
VDDQ
A6
A4
NC(2)
A8
A16
VDDQ
B
NC
CE 2
A3
ADV/LD
A9
CE2
NC
C
NC
A7
A2
VDD
A12
A15
NC
D
I/O16
I/OP3
VSS
NC
VSS
I/OP2
I/O15
E
I/O17
I/O18
VSS
CE1
VSS
I/O13
I/O14
F
VDDQ
I/O19
VSS
OE
VSS
I/O12
VDDQ
G
I/O20
I/O21
BW3
NC(2)
BW 2
I/O11
I/O10
H
I/O22
I/O23
VSS
R/W
VSS
I/O9
I/O8
J
VDDQ
VDD
VDD(1)
VDD
VDD(1)
VDD
VDDQ
K
I/O24
I/O26
VSS
CLK
VSS
I/O6
I/O7
L
I/O25
I/O27
BW4
NC
BW1
I/O4
I/O5
M
VDDQ
I/O28
VSS
CEN
VSS
I/O3
VDDQ
N
I/O29
I/O30
VSS
A1
VSS
I/O2
I/O1
P
I/O31
I/OP4
VSS
A0
VSS
I/OP1
I/O 0
R
NC
A5
LBO
VDD
A13
NC
T
NC
NC
A10
A11
NC
NC/ZZ(5)
U
VDDQ
NC/TMS(3) NC/TDI(3)
VDD(1)
A14
,
NC/TCK(3) NC/TDO(3) NC/TRST (3,4) VDDQ
4875 drw 13a
Top View
Pin Configuration — 256K x 18, 119 BGA
1
2
3
4
5
6
7
NC(2)
A8
A16
VDDQ
ADV/LD
A9
CE2
NC
VDD
A13
A17
NC
A
VDDQ
A6
A4
B
NC
CE2
A3
C
NC
A7
A2
D
I/O8
NC
VSS
NC
VSS
I/OP1
NC
E
NC
I/O9
VSS
CE1
VSS
NC
I/O7
VSS
OE
VSS
I/O6
VDDQ
NC
I/O5
F
VDDQ
NC
G
NC
I/O10
BW2
NC(2)
VSS
H
I/O11
NC
VSS
R/W
VSS
I/O4
NC
J
VDDQ
VDD
VDD(1)
VDD
VDD(1)
VDD
VDDQ
K
NC
I/O12
VSS
CLK
VSS
NC
I/O3
L
I/O13
NC
VSS
NC
BW1
I/O2
NC
M
VDDQ
I/O14
VSS
CEN
VSS
NC
VDDQ
N
I/O15
NC
VSS
A1
VSS
I/O1
NC
P
NC
I/OP2
VSS
A0
VSS
NC
I/O0
R
NC
A5
LBO
VDD
VDD(1)
A12
NC
T
NC
A10
A15
NC
A14
A11
NC/ZZ(5)
U
VDDQ
NC/TMS(3)
NC/TDI(3)
NC/TCK(3)
NC/TDO(3)
Top View
,
NC/TRST (3,4) VDDQ
4875 drw 13b
NOTES:
1. J3, J5, and R5 do not have to be directly connected to VDD as long as the input voltage is ≥ VIH.
2. G4 and A4 are reserved for future 8M and 16M respectively.
3. These pins are NC for the "S" version and the JTAG signal listed for the "SA" version.
4. TRST is offered as an optional JTAG reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.
5. Pin T7 supports ZZ (sleep mode) on the latest die revision.
6.42
7
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Pin Configuration — 128K x 36, 165 fBGA
1
2
3
4
5
6
7
8
9
10
11
A
NC(2)
A7
CE1
BW 3
BW 2
C E2
CEN
ADV/LD
NC(2)
A8
NC
B
NC
A6
CE2
BW 4
BW 1
CLK
R/W
OE
NC(2)
A9
NC(2)
C
I/OP3
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VDDQ
NC
I/OP2
D
I/O17
I/O16
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O15
I/O14
E
I/O19
I/O18
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O13
I/O12
F
I/O21
I/O20
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O11
I/O10
G
I/O23
I/O22
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O9
I/O8
H
VDD(1)
VDD(1)
NC
VDD
VSS
VSS
VSS
VDD
NC
NC
NC/ZZ(5)
J
I/O25
I/O24
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O7
I/O6
K
I/O27
I/O26
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O5
I/O4
L
I/O29
I/O28
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O3
I/O2
M
I/O31
I/O30
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O1
I/O0
N
I/OP4
NC
VDDQ
VSS
NC/TRST (3,4)
NC
VDD(1)
VSS
VDDQ
NC
I/OP1
P
NC
NC(2)
A5
A2
NC/TDI(3)
A1
NC/TDO(3)
A10
A13
A14
NC
R
LBO
(2)
A0
(3)
A11
A12
A15
NC
A4
A3
NC/TMS
(3)
NC/TCK
A16
4875 tbl 25
Pin Configuration — 256K x 18, 165 fBGA
1
A
(2)
NC
2
3
4
5
6
7
A7
C E1
8
BW 2
NC
C E2
CEN
ADV/LD
9
10
11
(2)
A8
A10
(2)
NC
B
NC
A6
CE2
NC
BW 1
CLK
R/W
OE
NC
A9
NC(2)
C
NC
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VDDQ
NC
I/OP1
D
NC
I/O8
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O7
E
NC
I/O9
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O6
F
NC
I/O10
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O5
G
NC
I/O11
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
I/O4
NC
VDD
VSS
VSS
VSS
VDD
NC
NC
NC/ZZ(5)
H
(1)
VDD
VDD
J
I/O12
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O3
NC
K
I/O13
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O2
NC
L
I/O14
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O1
NC
M
I/O15
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
I/O0
NC
N
I/OP2
NC
VDDQ
VSS
P
NC
R
LBO
(1)
(2)
NC
(2)
NC
A5
A4
A2
A3
NC/TRST
(3,4)
(3)
NC/TDI
NC/TMS
(3)
NC
A1
A0
(1)
VDD
VSS
VDDQ
NC
NC
(3)
A11
A14
A15
NC
(3)
A12
A13
A16
NC/TDO
NC/TCK
A17
4875 tbl 25a
NOTES:
1. H1, H2, and N7 do not have to be directly connected to VDD as long as the input voltage is ≥ VIH.
2. A9, B9, B11, A1, R2 and P2 are reserved for future 9M, 18M, 36M, 72M, 144M, and 288M respectively respectively.
3. These pins are NC for the "S" version and the JTAG signal listed for the "SA" version.
4. TRST is offered as an optional JTAG reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.
5. Pin H11 supports ZZ (sleep mode) on the latest die revision.
6.42
8
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Synchronous Truth Table(1)
CEN
R/W
Chip(5)
Enable
ADV/ LD
BWx
ADDRESS
USED
PREVIOUS CYCLE
CURRENT CYCLE
I/O
(2 cycles later)
L
L
Select
L
Valid
External
X
LOAD WRITE
D(7)
L
H
Select
L
X
External
X
LOAD READ
Q(7)
L
X
X
H
Valid
Internal
LOAD WRITE /
BURST WRITE
BURST WRITE
(Advance burst counter)(2)
D(7)
L
X
X
H
X
Internal
LOAD READ /
BURST READ
BURST READ
(Advance burst counter)(2)
Q(7)
L
X
Deselect
L
X
X
X
DESELECT or STOP(3)
HiZ
L
X
X
H
X
X
DESELECT / NOOP
NOOP
HiZ
H
X
X
X
X
X
X
SUSPEND(4)
Previous Value
4875 tbl 08
NOTES:
1. L = V IL, H = VIH, X = Don’t Care.
2. When ADV/LD signal is sampled high, the internal burst counter is incremented. The R/W signal is ignored when the counter is advanced. Therefore the nature of
the burst cycle (Read or Write) is determined by the status of the R/W signal when the first address is loaded at the beginning of the burst cycle.
3. Deselect cycle is initiated when either (CE1, or CE2 is sampled high or CE2 is sampled low) and ADV/LD is sampled low at rising edge of clock. The data bus will
tri-state two cycles after deselect is initiated.
4. When CEN is sampled high at the rising edge of clock, that clock edge is blocked from propogating through the part. The state of all the internal registers and the I/
Os remains unchanged.
5. To select the chip requires CE1 = L, CE2 = L, CE 2 = H on these chip enables. Chip is deselected if any one of the chip enables is false.
6. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
7. Q - Data read from the device, D - data written to the device.
Partial Truth Table for Writes(1)
R/W
BW1
BW2
BW3(3)
BW4(3)
READ
H
X
X
X
X
WRITE ALL BYTES
L
L
L
L
L
WRITE BYTE 1 (I/O[0:7], I/OP1)(2)
L
L
H
H
H
OPERATION
WRITE BYTE 2 (I/O[8:15], I/OP2)(2)
L
H
L
H
H
(2,3)
L
H
H
L
H
(2,3)
WRITE BYTE 4 (I/O[24:31], I/OP4)
L
H
H
H
L
NO WRITE
L
H
H
H
H
WRITE BYTE 3 (I/O[16:23], I/OP3)
4875 tbl 09
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Multiple bytes may be selected during the same cycle.
3. N/A for X18 configuration.
6.42
9
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Interleaved Burst Sequence Table (LBO=VDD)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
0
0
1
1
1
0
Third Address
1
0
1
1
0
0
0
1
1
1
1
0
0
1
0
0
Fourth Address
(1)
4875 tbl 10
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Linear Burst Sequence Table (LBO=VSS)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
1
0
1
1
0
0
Third Address
1
0
1
1
0
0
0
1
1
1
0
0
0
1
1
0
Fourth Address
(1)
4875 tbl 11
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
Functional Timing Diagram(1)
CYCLE
n+29
n+30
n+31
n+32
n+33
n+34
n+35
n+36
n+37
A29
A30
A31
A32
A33
A34
A35
A36
A37
C29
C30
C31
C32
C33
C34
C35
C36
C37
D/Q27
D/Q28
D/Q29
D/Q30
D/Q31
D/Q32
D/Q33
D/Q34
D/Q35
CLOCK
(2)
ADDRESS
(A0 - A16)
(2)
CONTROL
(R/W, ADV/LD, BWx)
(2)
DATA
I/O [0:31], I/O P[1:4]
4875 drw 03
NOTES:
1. This assumes CEN, CE1, CE2, CE2 are all true.
2. All Address, Control and Data_In are only required to meet set-up and hold time with respect to the rising edge of clock. Data_Out is valid after a clock-to-data
delay from the rising edge of clock.
6.42
10
,
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Device Operation - Showint Mixed Load, Burst,
Deselect and NOOP Cycles(2)
Cycle
Address
R/ W
ADV/LD
CE(1)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Load read
n+1
X
X
H
X
L
X
X
X
Burst read
n+2
A1
H
L
L
L
X
L
Q0
Load read
n+3
X
X
L
H
L
X
L
Q0+1
n+4
X
X
H
X
L
X
L
Q1
NOOP
n+5
A2
H
L
L
L
X
X
Z
Load read
n+6
X
X
H
X
L
X
X
Z
Burst read
n+7
X
X
L
H
L
X
L
Q2
Deselect or STOP
n+8
A3
L
L
L
L
L
L
Q2+1
Load write
n+9
X
X
H
X
L
L
X
Z
Burst write
n+10
A4
L
L
L
L
L
X
D3
Load write
n+11
X
X
L
H
L
X
X
D3+1
n+12
X
X
H
X
L
X
X
D4
NOOP
n+13
A5
L
L
L
L
L
X
Z
Load write
n+14
A6
H
L
L
L
X
X
Z
Load read
n+15
A7
L
L
L
L
L
X
D5
Load write
n+16
X
X
H
X
L
L
L
Q6
Burst write
n+17
A8
H
L
L
L
X
X
D7
Load read
n+18
X
X
H
X
L
X
X
D7+1
Burst read
n+19
A9
L
L
L
L
L
L
Q8
Load write
Deselect or STOP
Deselect or STOP
4875 tbl 12
NOTES:
1. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
2. H = High; L = Low; X = Don’t Care; Z = High Impedance.
Read Operation(1)
Cycle
Address
R/ W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
X
X
L
X
X
X
Clock Setup Valid
n+2
X
X
X
X
X
X
L
Q0
Contents of Address A0 Read Out
4875 tbl 13
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
11
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Burst Read Operation(1)
Cycle
Address
R/ W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
H
X
L
X
X
X
Clock Setup Valid, Advance Counter
n+2
X
X
H
X
L
X
L
Q0
Address A0 Read Out, Inc. Count
n+3
X
X
H
X
L
X
L
Q0+1
Address A0+1 Read Out, Inc. Count
n+4
X
X
H
X
L
X
L
Q0+2
Address A0+2 Read Out, Inc. Count
n+5
A1
H
L
L
L
X
L
Q0+3
Address A0+3 Read Out, Load A1
n+6
X
X
H
X
L
X
L
Q0
Address A0 Read Out, Inc. Count
n+7
X
X
H
X
L
X
L
Q1
Address A1 Read Out, Inc. Count
n+8
A2
H
L
L
L
X
L
Q1+1
Address A1+1 Read Out, Load A2
4875 tbl 14
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance..
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Write Operation(1)
Cycle
Address
R/ W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Address and Control meet setup
n+1
X
X
X
X
L
X
X
X
Clock Setup Valid
n+2
X
X
X
X
L
X
X
D0
Write to Address A0
4875 tbl 15
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Burst Write Operation(1)
Cycle
Address
R/ W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Address and Control meet setup
n+1
X
X
H
X
L
L
X
X
Clock Setup Valid, Inc. Count
n+2
X
X
H
X
L
L
X
D0
Address A0 Write, Inc. Count
n+3
X
X
H
X
L
L
X
D0+1
Address A0+1 Write, Inc. Count
n+4
X
X
H
X
L
L
X
D0+2
Address A0+2 Write, Inc. Count
n+5
A1
L
L
L
L
L
X
D0+3
Address A0+3 Write, Load A1
n+6
X
X
H
X
L
L
X
D0
Address A0 Write, Inc. Count
n+7
X
X
H
X
L
L
X
D1
Address A1 Write, Inc. Count
n+8
A2
L
L
L
L
L
X
D1+1
Address A1+1 Write, Load A2
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
12
4875 tbl 16
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Read Operation with Clock Enable Used(1)
Cycle
Address
R/ W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
X
X
H
X
X
X
Clock n+1 Ignored
n+2
A1
H
L
L
L
X
X
X
Clock Valid
n+3
X
X
X
X
H
X
L
Q0
Clock Ignored. Data Q0 is on the bus.
n+4
X
X
X
X
H
X
L
Q0
Clock Ignored. Data Q0 is on the bus.
n+5
A2
H
L
L
L
X
L
Q0
Address A0 Read out (bus trans.)
n+6
A3
H
L
L
L
X
L
Q1
Address A1 Read out (bus trans.)
n+7
A4
H
L
L
L
X
L
Q2
Address A2 Read out (bus trans.)
4875 tbl 17
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
Write Operation with Clock Enable Used(1)
Cycle
Address
R/ W
ADV/LD
CE(2)
CEN
BWx
OE
I/O
Comments
n
A0
L
L
L
L
L
X
X
Address and Control meet setup.
n+1
X
X
X
X
H
X
X
X
Clock n+1 Ignored.
n+2
A1
L
L
L
L
L
X
X
Clock Valid.
n+3
X
X
X
X
H
X
X
X
Clock Ignored.
n+4
X
X
X
X
H
X
X
X
Clock Ignored.
n+5
A2
L
L
L
L
L
X
D0
Write Data D0
n+6
A3
L
L
L
L
L
X
D1
Write Data D1
n+7
A4
L
L
L
L
L
X
D2
Write Data D2
4875 tbl 18
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
13
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Read Operation with Chip Enable Used(1)
Cycle
Address
R/ W
ADV/LD
CE(2)
CEN
BWx
OE
I/O(3)
Comments
n
X
X
L
H
L
X
X
?
Deselected.
n+1
X
X
L
H
L
X
X
?
Deselected.
n+2
A0
H
L
L
L
X
X
Z
Address and Control meet setup
n+3
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+4
A1
H
L
L
L
X
L
Q0
Address A0 Read out. Load A 1.
n+5
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+6
X
X
L
H
L
X
L
Q1
Address A1 Read out. Deselected.
n+7
A2
H
L
L
L
X
X
Z
Address and control meet setup.
n+8
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+9
X
X
L
H
L
X
L
Q2
Address A2 Read out. Deselected.
4875 tbl 19
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE 2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
3. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
Write Operation with Chip Enable Used(1)
Cycle
Address
R/ W
ADV/LD
CE(2)
CEN
BWx
OE
I/O(3)
Comments
n
X
X
L
H
L
X
X
?
Deselected.
n+1
X
X
L
H
L
X
X
?
Deselected.
n+2
A0
L
L
L
L
L
X
Z
Address and Control meet setup
n+3
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+4
A1
L
L
L
L
L
X
D0
Address D0 Write in. Load A 1.
n+5
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+6
X
X
L
H
L
X
X
D1
Address D1 Write in. Deselected.
n+7
A2
L
L
L
L
L
X
Z
Address and control meet setup.
n+8
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+9
X
X
L
H
L
X
X
D2
Address D2 Write in. Deselected.
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.
6.42
14
4875 tbl 20
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V±5%)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
|ILI|
Input Leakage Current
VDD = Max., VIN = 0V to V DD
___
5
µA
|ILI|
LBO, JTAG and ZZ Input Leakage Current(1)
VDD = Max., VIN = 0V to V DD
___
30
µA
|ILO|
Output Leakage Current
VOUT = 0V to V DDQ, Device Deselected
___
5
µA
VOL
Output Low Voltage
IOL = +6mA, VDD = Min.
___
0.4
V
2.0
___
V
VOH
Output High Voltage
IOH = -6mA, VDD = Min.
4875 tbl 21
NOTE:
1. The LBO, TMS, TDI, TCK & TRST pins will be internally pulled to VDD and ZZ will be internally pulled to VSS if it is not actively driven in the application.
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range (1) (VDD = 3.3V±5%)
200MHz
166MHz
133MHz
100MHz
Unit
Symbol
Parameter
Test Conditions
Com'l Only
Com'l
Ind
Com'l
Ind
Com'l
Ind
IDD
Operating Power
Supply Current
Device Selected, Outputs Open,
ADV/ LD = X, V DD = Max.,
VIN > VIH or < VIL, f = fMAX(2)
400
350
360
300
310
250
260
mA
ISB1
Device Deselected, Outputs
CMOS Standby
Power Supply Current Open, VDD = Max., VIN > VHD or
< VLD, f = 0(2,3)
40
40
45
40
45
40
45
mA
ISB2
Clock Running Power
Supply Current
Device Deselected, Outputs
Open, VDD = Max., VIN > VHD or
< VLD,
f = fMAX(2.3)
130
120
130
110
120
100
110
mA
ISB3
Idle Power
Supply Current
Device Selected, Outputs Open,
CEN > VIH, VDD = Max.,
VIN > VHD or < VLD, f = fMAX(2,3)
40
40
45
40
45
40
45
mA
4875 tbl 22
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ – 0.2V, VLD = 0.2V. For other inputs VHD = VDD – 0.2V, VLD = 0.2V.
AC Test Loads
AC Test Conditions
VDDQ/2
(VDDQ = 2.5V)
50Ω
I/O
Z0 = 50Ω
,
Input Rise/Fall Times
4875 drw 04
6
Figure 1. AC Test Load
5
Input Pulse Levels
4
2ns
Input Timing Reference Levels
(VDDQ/2)
Output Timing Reference Levels
(VDDQ/2)
AC Test Load
∆tCD 3
(Typical, ns)
2
0 to 2.5V
See Figure 1
4875 tbl 23
1
20 30 50
80 100
Capacitance (pF)
200
4875 drw 05
,
Figure 2. Lumped Capacitive Load, Typical Derating
6.42
15
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = 3.3V±5%, Commercial and Industrial Temperature Ranges)
200MHz
Symbol
Parameter
166MHz
133MHz
100MHz
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tCYC
Clock Cycle Time
5
____
6
____
7.5
____
10
____
ns
tF(1)
Clock Frequence
____
200
____
166
____
133
____
100
MHz
tCH(2)
Clock High Pulse Width
1.8
____
1.8
____
2.2
____
3.2
____
ns
tCL(2)
Clock Low Pulse Width
1.8
____
1.8
____
2.2
____
3.2
____
ns
____
3.2
____
3.5
____
4.2
____
5
ns
Output Parameters
tCD
Clock High to Valid Data
tCDC
Clock High to Data Change
1
____
1
____
1
____
1
____
ns
tCLZ(3,4,5)
Clock High to Output Active
1
____
1
____
1
____
1
____
ns
tCHZ(3,4,5)
Clock High to Data High-Z
1
3
1
3
1
3
1
3
ns
tOE
Output Enable Access Time
____
3.2
____
3.5
____
4.2
____
5
ns
tOLZ(3,4)
Output Enable Low to Data Active
0
____
0
____
0
____
0
____
ns
tOHZ(3,4)
Output Enable High to Data High-Z
____
3.5
____
3.5
____
4.2
____
5
ns
1.5
____
1.5
____
1.7
____
2.0
____
ns
1.5
____
1.5
____
1.7
____
2.0
____
ns
1.5
____
1.7
____
2.0
____
ns
Set Up Times
tSE
tSA
Clock Enable Setup Time
Address Setup Time
tSD
Data In Setup Time
1.5
____
tSW
Read/Write (R/ W) Setup Time
1.5
____
1.5
____
1.7
____
2.0
____
ns
tSADV
Advance/Load (ADV/LD) Setup
Time
1.5
____
1.5
____
1.7
____
2.0
____
ns
tSC
Chip Enable/Select Setup Time
1.5
____
1.5
____
1.7
____
2.0
____
ns
tSB
Byte Write Enable (BWx) Setup
Time
1.5
____
1.5
____
1.7
____
2.0
____
ns
tHE
Clock Enable Hold Time
0.5
____
0.5
____
0.5
____
0.5
____
ns
tHA
Address Hold Time
0.5
____
0.5
____
0.5
____
0.5
____
ns
tHD
Data In Hold Time
0.5
____
0.5
____
0.5
____
0.5
____
ns
tHW
Read/Write (R/ W) Hold Time
0.5
____
0.5
____
0.5
____
0.5
____
ns
tHADV
Advance/Load (ADV/LD) Hold Time
0.5
____
0.5
____
0.5
____
0.5
____
ns
tHC
Chip Enable/Select Hold Time
0.5
____
0.5
____
0.5
____
0.5
____
ns
tHB
Byte Write Enable (BWx) Hold Time
0.5
____
0.5
____
0.5
____
0.5
____
ns
Hold Times
4875 tbl 24
NOTES:
1. tF = 1/tCYC.
2. Measured as HIGH above 0.6VDDQ and LOW below 0.4VDDQ.
3. Transition is measured ±200mV from steady-state.
4. These parameters are guaranteed with the AC load (Figure 1) by device characterization. They are not production tested.
5. To avoid bus contention, the output buffers are designed such that tCHZ (device turn-off) is about 1ns faster than tCLZ (device turn-on) at a given temperature and voltage.
The specs as shown do not imply bus contention because tCLZ is a Min. parameter that is worse case at totally different test conditions (0 deg. C, 3.465V) than tCHZ,
which is a Max. parameter (worse case at 70 deg. C, 3.135V).
6.42
16
6.42
17
A1
tSADV
tHA
tHW
tHE
tCLZ
tHC
Pipeline
Read
tSC
A2
tSA
tSW
tSE
tCD
Pipeline
Read
Q(A1)
tHADV
tCH
tCDC
tCL
Q(A2)
O1(A2)
,
O2(A2)
Q(A
2+1)
Q(A2+2)
(CEN high, eliminates
current L-H clock edge)
Burst Pipeline Read
tCD
Q(A2+2)
tCDC
Q(A2+3)
tCHZ
Q(A2)
4875 drw 06
(Burst Wraps around
to initial state)
NOTES:
1. Q (A1) represents the first output from the external address A1. Q (A2) represents the first output from the external address A2; Q (A2+1) represents the next output data in the burst sequence
of the base address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW.
4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address and control are
loaded into the SRAM.
DATAOUT
OE
BW1 - BW4
CE1, CE2
(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle(1,2,3,4)
(2)
6.42
18
A1
tSADV
tHW
tHE
tHB
tHC
Pipeline
Write
tSB
tSC
tHA
A2
tSA
tSW
tSE
tHD
Pipeline
Write
D(A1)
tSD
tHADV
tCH
,
D(A2)
tCL
D(A2+1)
Burst Pipeline Write
(CEN high, eliminates
current L-H clock edge)
tSD
D(A2+2)
tHD
D(A2)
4875 drw 07
D(A2+3)
(Burst Wraps around
to initial state)
NOTES:
1. D (A1) represents the first input to the external address A1. D (A2) represents the first input to the external address A2; D (A2+1) represents the next input data in the burst sequence of
the base address A2, etc. where address bits A0 and A1 are advancing for the four word burst in the sequence defined by the state of the LBO input.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Burst ends when new address and control are loaded into the SRAM by sampling ADV/LD LOW.
4. R/W is don't care when the SRAM is bursting (ADV/LD sampled HIGH). The nature of the burst access (Read or Write) is fixed by the state of the R/W signal when new address and control are
loaded into the SRAM.
5. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two cycles before
the actual data is presented to the SRAM.
DATAIN
OE
BW1 - BW4
CE1, CE2
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycles(1,2,3,4,5)
6.42
19
A1
tSADV
tHW
tHE
tCD
tHB
tHC
Read
tSB
tSC
tHA
A2
tSA
tSW
tSE
A3
Q(A1)
tCHZ
Write
tHADV
tCH
tCLZ
Read
D(A2)
tSD tHD
A4
tCL
Q(A3)
tCDC
Write
A5
D(A4)
A6
Read
D(A5)
A7
Q(A6)
A8
Q(A7)
A9
4875 drw 08
,
,
NOTES:
1. Q (A1) represents the first output from the external address A1. D (A2) represents the input data to the SRAM corresponding to address A2.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two
cycles before the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of Combined Read and Write Cycles (1,2,3)
6.42
20
A1
tSE
tSADV
tHE
tHW
tHB
tHC
tCD
tCLZ
B(A2)
tSB
tSC
tHA
A2
tSA
tSW
tCH
tHADV
tCYC
Q(A1)
tCL
tCHZ
tCDC
Q(A1)
A3
D(A2)
tSD tHD
A4
4875 drw 09
Q(A3)
A5
,
NOTES:
1. Q (A1) represents the first output from the external address A1. D (A2) represents the input data to the SRAM corresponding to address A2.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. CEN when sampled high on the rising edge of clock will block that L-H transition of the clock from propogating into the SRAM. The part will behave as if the L-H clock transition did not occur. All
internal registers in the SRAM will retain their previous state.
4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two cycles before
the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2(2)
ADDRESS
R/W
ADV/LD
CEN
CLK
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of CEN Operation(1,2,3,4)
6.42
21
(2)
A1
tSADV
tHW
tHE
tSC
tCLZ
tCD
tHC
tHA
A2
tSA
tSW
tSE
Q(A1)
tHADV
tCH
tCDC
tCHZ
tHB
Q(A2)
tSB
A3
tCL
D(A3)
tSD tHD
A4
Q(A4)
A5
4875 drw 10
,
NOTES:
1. Q (A1) represents the first output from the external address A1. D (A3) represents the input data to the SRAM corresponding to address A3.
2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH.
3. CEN when sampled high on the rising edge of clock will block that L-H transition of the clock from propogating into the SRAM. The part will behave as if the L-H clock transition did not occur. All
internal registers in the SRAM will retain their previous state.
4. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two cycles before
the actual data is presented to the SRAM.
DATAOUT
DATAIN
OE
BW1 - BW4
CE1, CE2
ADDRESS
R/W
ADV/LD
CEN
CLK
tCYC
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of CS Operation(1,2,3,4)
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
JTAG Interface Specification (SA Version only)
tJF
tJCL
tJCYC
tJR
tJCH
TCK
Device Inputs(1)/
TDI/TMS
tJS
Device Outputs(2)/
TDO
tJDC
tJH
tJRSR
tJCD
TRST(3)
x
M4875 drw 01
tJRST
NOTES:
1. Device inputs = All device inputs except TDI, TMS and TRST.
2. Device outputs = All device outputs except TDO.
3. During power up, TRST could be driven low or not be used since the JTAG circuit resets automatically. TRST is an optional JTAG reset.
JTAG AC Electrical
Characteristics(1,2,3,4)
Symbol
Parameter
Min.
Max.
Units
ns
tJCYC
JTAG Clock Input Period
100
____
tJCH
JTAG Clock HIGH
40
____
ns
tJCL
JTAG Clock Low
40
____
ns
tJR
JTAG Clock Rise Time
____
5(1)
tJF
JTAG Clock Fall Time
____
tJRST
JTAG Reset
tJRSR
tJCD
Scan Register Sizes
Register Name
Bit Size
Instruction (IR)
4
ns
Bypass (BYR)
1
5(1)
ns
JTAG Identification (JIDR)
50
____
ns
Boundary Scan (BSR)
JTAG Reset Recovery
50
____
ns
JTAG Data Output
____
20
ns
ns
ns
tJDC
JTAG Data Output Hold
0
____
tJS
JTAG Setup
25
____
tJH
JTAG Hold
25
____
32
Note (1)
I4875 tbl 03
NOTE:
1. The Boundary Scan Descriptive Language (BSDL) file for this device is available
by contacting your local IDT sales representative.
ns
I4875 tbl 01
NOTES:
1. Guaranteed by design.
2. AC Test Load (Fig. 1) on external output signals.
3. Refer to AC Test Conditions stated earlier in this document.
4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet.
6.42
22
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
JTAG Identification Register Definitions (SA Version only)
Instruction Field
Value
Revision Number (31:28)
Description
0x2
IDT Device ID (27:12)
0x210, 0x212
IDT JEDEC ID (11:1)
0x33
ID Register Indicator Bit (Bit 0)
Reserved for version number.
Defines IDT part number 71V2556SA and 71V2558SA, respectively.
Allows unique identification of device vendor as IDT.
1
Indicates the presence of an ID register.
I4875 tbl 02
Available JTAG Instructions
Instruction
Description
OPCODE
EXTEST
Forces contents of the boundary scan cells onto the device outputs (1).
Places the boundary scan register (BSR) between TDI and TDO.
0000
SAMPLE/PRELOAD
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data from device inputs(2) and outputs(1) to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the boundary scan cells via the TDI.
0001
DEVICE_ID
Loads the JTAG ID register (JIDR) with the vendor ID code and places
the register between TDI and TDO.
0010
HIGHZ
Places the bypass register (BYR) between TDI and TDO. Forces all
device o utput drivers to a High-Z state.
0011
RESERVED
RESERVED
RESERVED
0100
Several combinations are reserved. Do not use codes other than those
identified for EXTEST, SAMPLE/PRELOAD, DEVICE_ID, HIGHZ, CLAMP,
VALIDATE and BYPASS instructions.
RESERVED
CLAMP
0101
0110
0111
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the byp ass registe r (BYR) between TDI and TDO.
RESERVED
1000
1001
RESERVED
1010
Same as above.
RESERVED
1011
RESERVED
1100
VALIDATE
Automatically loaded into the instruction register whenever the TAP
controller passes through the CAPTURE-IR state. The lower two bits '01'
are mand ated by the IEEE std. 1149.1 specification.
1101
RESERVED
Same as above.
1110
BYPASS
The BYPASS instruction is used to truncate the boundary scan register
as a single bit in length.
1111
I4875 tbl 04
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST.
6.42
23
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
100 Pin Plastic Thin Quad Flatpack (TQFP) Package Diagram Outline
6.42
24
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
119 Ball Grid Array (BGA) Package Diagram Outline
6.42
25
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
6.42
26
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Timing Waveform of OE Operation(1)
OE
tOE
tOHZ
tOLZ
DATAOUT
Valid
4875 drw 11
NOTE:
1. A read operation is assumed to be in progress.
,
Ordering Information
IDT
XXXX
XX
XX
XX
X
Device
Type
Power
Speed
Package
Process/
Temperature
Range
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
PF**
BG
BQ
100-pin Plastic Thin Quad Flatpack (TQFP)
119 Ball Grid Array (BGA)
165 Fine Pitch Ball Grid Array (fBGA)
200*
166
133
100
Clock Frequency in Megahertz
S
SA
Standard Power
Standard Power with JTAG Interface
IDT71V2556
IDT71V2558
128Kx36 Pipelined ZBT SRAM with 2.5V I/O
256Kx18 Pipelined ZBT SRAM with 2.5V I/O
*Available for commercial temperature range only.
** JTAG (SA version) is not available with 100-pin TQFP package
6.42
27
,
4875 drw 12
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Datasheet Document History
6/30/99
8/23/99
Pp. 4, 5
Pg. 6
Pg. 14
Pg. 15
10/4/99
Pg. 22
Pg. 24
Pg. 14
Pg. 15
12/31/99
04/30/00
Pg. 5,6
Pg. 6
Pg. 7
Pg. 21
05/26/00
07/26/00
Pg. 23
Pg. 5,6,7
Pg. 8
Pg. 23
10/25/00
5/20/02
10/15/04
Pg. 8
Pg. 1-8,15,22,23,27
Pg.7
Updated to new format
Added Smart ZBT functionality
Added Note 4 and changed Pins 38, 42, and 43 to DNU
Changed U2–U6 to DNU
Added Smart ZBT AC Electrical Characteristics
Improved tCD and tOE(MAX) at 166MHz
Revised tCHZ(MIN) for f ≤ 133 MHz
Revised tOHZ (MAX) for f ≤ 133 MHz
Improved tCH, tCL for f ≤ 166 MHz
Improved setup times for 100–200 MHz
Added BGA package diagrams
Added Datasheet Document History
Revised AC Electrical Characteristics table
Revised tCHZ to match tCLZ and tCDC at 133MHz and 100MHz
Removed Smart functionality
Added Industrial Temperature range offerings at the 100 to 166MHz speed grades.
Add clarification note to Recommended Temperature Ratings and Absolute Max Ratings
table; Add note to TQFP Pin Configurations
Add BGA Capacitance table
Add note to BGA Pin Configurations
Insert TQFP Package Diagram Outline
Add new package offering, 13 x 15mm 165fBGA
Correct 119 BGA Package Diagram Outline
Add zz, sleep mode reference note to TQFP, BG119 and BQ165 pinouts
Update BQ165 pinout
Update BG119 package diagram outlines
Remove Preliminary Status
Add note to pin N5, BQ165 pinout reserved for JTAG TRST
Added JTAG "SA" version functionality & updated ZZ pin descriptions and notes.
Updated pin configuration for the 119 BGA - reordered I/O signals on P6, P7 (128K x 36)
and P7, N6, L6, K7, H6, G7, F6, E7, D6 (256K x 18).
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for SALES:
800-345-7015 or 408-727-6116
fax: 408-492-8674
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for Tech Support:
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800-544-7726
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
ZBT and ZeroBus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.
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