LSJ110 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J110 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The SOT-23 package is well suited for cost sensitive applications and mass production. FEATURES DIRECT REPLACEMENT FOR SILICONIX J110 LOW ON RESISTANCE rDS(on) ≤ 18Ω FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) (See Packaging Information). Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain Voltage Gate to Source Voltage LSJ110 Benefits: Low On Resistance Low insertion loss Low Noise LSJ110 Applications: Analog Switches Commutators Choppers LSJ110 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage ‐25 VGS(off) Gate to Source Cutoff Voltage ‐0.5 VGS(F) Gate to Source Forward Voltage ‐‐ IDSS Drain to Source Saturation Current (Note 2) 10 IGSS Gate Reverse Current ‐‐ IG Gate Operating Current ‐‐ ID(off) Drain Cutoff Current ‐‐ rDS(on) Drain to Source On Resistance ‐‐ TYP. ‐‐ ‐‐ 0.7 ‐‐ ‐0.01 ‐0.01 0.02 ‐‐ ‐55°C to +150°C ‐55°C to +150°C 350mW 50mA VGDS = ‐25V VGSS = ‐25V MAX ‐‐ ‐4 ‐‐ ‐‐ ‐3 ‐‐ 3 18 UNITS Ω CONDITIONS IG = 1µA, VDS = 0V VDS = 5V, ID = 1µA IG = 1mA, VDS = 0V VDS = 15V, VGS = 0V VGS = ‐15V, VDS = 0V VDG = 10V, ID = 10mA VDS = 5V, VGS = ‐10V VGS = 0V, VDS ≤ 0.1V MAX ‐‐ ‐‐ 18 ‐‐ ‐‐ ‐‐ UNITS mS CONDITIONS VDS = 5V, ID = 10mA , f = 1kHz Ω VGS = 0V, ID = 0A, f = 1kHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 0V, VGS = ‐10V, f = 1MHz VDS = 5V, ID = 10mA , f = 1kHz V mA nA Click To Buy LSJ110 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. gfs Forward Transconductance ‐‐ 17 gos Output Conductance ‐‐ 0.6 rDS(on) Drain to Source On Resistance ‐‐ ‐‐ Ciss Input Capacitance ‐‐ 60 Crss Reverse Transfer Capacitance ‐‐ 11 en Equivalent Noise Voltage ‐‐ 3.5 pF nV/√Hz LSJ110 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS td(on) Turn On Time CONDITIONS 3 tr Turn On Rise Time 1 td(off) Turn Off Time 4 tf Turn Off Fall Time 18 VDD = 1.5V VGS(H) = 0V ns See Switching Circuit Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ110 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% LSJ110 SWITCHING CIRCUIT PARAMETERS VGS(L) RL ID(on) ‐5V 150Ω 10mA Micross Components Europe Available Packages: SWITCHING TEST CIRCUIT SOT-23 (Top View) LSJ110 in SOT-23 LSJ110 in bare die. Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.