ASAT25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG(A) The ASI ASAT25 is Designed for A .020 x 45° Ø .130 NOM. .050 x 45° FEATURES: D C • • • Omnigold™ Metalization System L B M E F G H J MAXIMUM RATINGS I 2.6 A IC 45 V VCBO 3.0 V VEBO PDISS 50 W @ TC = 25 OC TJ -65 OC to +200 OC O θ JC 3.5 OC/W SYMBOL inches / mm inches / mm A .055 / 1.40 .065 / 1.65 .124 / 3.15 C .243 / 6.17 .253 / 6.43 D .635 / 16.13 .665 / 16.89 E .555 / 14.10 .565 / 14.35 F .739 / 18.77 .749 / 19.02 G .315 / 8.00 .325 / 8.26 H .002 / 0.05 .006 / 0.15 I .055 / 1.40 .065 / 1.65 J .075 / 1.91 .095 / 2.41 .190 / 4.83 .245 / 6.22 L .255 / 6.48 .092 / 2.34 M -65 C to +150 C CHARACTERISTICS MINIMUM K O TSTG MAXIMUM DIM B 12 V VCEO K ORDER CODE: ASI10520 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 6 mA 45 V BVCEO IC = 6 mA 12 V BVEBO IE = 6 mA 3.0 V hFE VCE = 5.0 V IC = 1.2 A PG ηC VCC = 28 V GHz POUT = 25 W 15 f = 1.65 9.0 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 150 --dB % REV. A 1/1