ASI ASI10520 Npn silicon rf power transistor Datasheet

ASAT25
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .250 2L FLG(A)
The ASI ASAT25 is Designed for
A
.020 x 45°
Ø .130 NOM.
.050 x 45°
FEATURES:
D C
•
•
• Omnigold™ Metalization System
L
B
M
E
F
G
H
J
MAXIMUM RATINGS
I
2.6 A
IC
45 V
VCBO
3.0 V
VEBO
PDISS
50 W @ TC = 25 OC
TJ
-65 OC to +200 OC
O
θ JC
3.5 OC/W
SYMBOL
inches / mm
inches / mm
A
.055 / 1.40
.065 / 1.65
.124 / 3.15
C
.243 / 6.17
.253 / 6.43
D
.635 / 16.13
.665 / 16.89
E
.555 / 14.10
.565 / 14.35
F
.739 / 18.77
.749 / 19.02
G
.315 / 8.00
.325 / 8.26
H
.002 / 0.05
.006 / 0.15
I
.055 / 1.40
.065 / 1.65
J
.075 / 1.91
.095 / 2.41
.190 / 4.83
.245 / 6.22
L
.255 / 6.48
.092 / 2.34
M
-65 C to +150 C
CHARACTERISTICS
MINIMUM
K
O
TSTG
MAXIMUM
DIM
B
12 V
VCEO
K
ORDER CODE: ASI10520
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 6 mA
45
V
BVCEO
IC = 6 mA
12
V
BVEBO
IE = 6 mA
3.0
V
hFE
VCE = 5.0 V
IC = 1.2 A
PG
ηC
VCC = 28 V
GHz
POUT = 25 W
15
f = 1.65
9.0
50
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
150
--dB
%
REV. A
1/1
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