UMS CHA5266-99F 10-16 ghz medium power amplifier Datasheet

CHA5266-99F
10-16 GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5266-99F is a three stage
monolithic GaAs Medium Power Amplifier
that produces 23dB linear gain and 36dBm
OIP3.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
VD2
VD1
VD3
RF OUT
RF IN
VG2
VG1
Main Features
30
■ Broadband performances: 10-16GHz.
■ 23dB Linear Gain.
■ 26.5dBm output power @ 1dB comp.
■ 36dBm OIP3.
■ DC bias: Vd=5.0Volt@Id=360mA.
■ Chip size 1.81x1.37x0.1mm.
20
VG3
Gain and retun losses (dB)
25
S21
15
S11
10
S22
5
0
-5
-10
-15
-20
-25
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
OIP3
Output IP3
Pout
Output Power @1dB comp.
Ref. : DSCHA52666274 - 30 Sep 16
Min
10
Typ
Max
16
23
36
26.5
1/12
Unit
GHz
dB
dBm
dBm
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +5.0V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
10
16
GHz
Gain
Linear Gain
23
dB
RL_in
Input Return Loss
12
dB
RL_out
Output Return Loss
15
dB
P1dB
Output power @ 1dB compression
26.5
dBm
Psat
Saturated output power
27.5
dBm
OIP3
Output IP3
36
dBm
NF
Noise Figure
5.5
dB
Idq
Quiescent Drain current
360
mA
Vg
Gate Voltage
-0.35
V
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.3nH will improve the matching at the accesses.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
7V
V
Idq
Drain bias current
0.45
A
Vg
Gate bias voltage
-2 to 0
V
Pin
Input continuous power
20
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad Ref.
Vd
VD1
Vd
VD2
Vd
VD3
Vg
VG1
Vg
VG2
Vg
VG3
Ref. : DSCHA52666274 - 30 Sep 16
Parameter
DC Drain voltage 1st stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage 1st stage
DC Gate voltage 2nd stage
DC Gate voltage 3rd stage
2/12
Values
5
5
5
-0.35
-0.35
-0.35
Unit
V
V
V
V
V
V
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Typical on wafer Sij parameters
Tamb.= +25°C, Vd = +5.0V, Id = 360mA
Freq
S11
PhS11
S21
(GHz)
(dB)
(°)
(dB)
1.0
-0.9
151.4
-59.0
2.0
-1.0
123.9
-49.2
3.0
-1.1
97.2
-53.2
4.0
-1.2
71.4
-45.6
5.0
-1.5
45.9
-25.9
6.0
-1.8
20.0
-6.9
7.0
-2.6
-7.7
7.3
8.0
-4.5
-35.4
17.7
9.0
-7.4
-51.2
24.6
10.0
-8.8
-60.8
26.3
11.0
-9.6
-80.1
25.4
12.0
-10.7
-99.7
24.4
13.0
-12.8
-139.9
23.6
14.0
-21.4
-175.2
22.1
15.0
-24.0
-53.1
20.7
16.0
-13.0
-103.2
20.7
17.0
-9.8
-140.8
20.7
18.0
-7.1
-178.0
19.0
19.0
-4.8
150.4
12.6
20.0
-3.3
118.6
3.8
21.0
-2.4
92.7
-4.7
22.0
-1.9
71.4
-12.3
23.0
-1.4
52.8
-20.4
24.0
-1.1
36.2
-28.1
25.0
-1.0
21.6
-35.8
26.0
-1.0
8.4
-39.8
27.0
-1.0
-3.3
-41.7
28.0
-1.0
-13.8
-43.3
29.0
-1.2
-23.7
-43.1
30.0
-1.3
-32.4
-38.8
31.0
-1.5
-40.0
-38.3
32.0
-1.6
-46.8
-38.3
33.0
-1.6
-52.6
-37.9
34.0
-1.3
-59.8
-40.6
35.0
-1.6
-68.1
-39.2
36.0
-1.9
-72.8
-42.6
37.0
-1.6
-76.8
-50.9
38.0
-1.3
-84.4
-60.5
39.0
-1.8
-92.7
-45.0
40.0
-2.0
-97.8
-49.0
Ref. : DSCHA52666274 - 30 Sep 16
PhS21
(°)
96.0
-63.4
-16.8
40.0
94.5
46.4
-25.3
-113.2
145.8
45.3
-35.8
-102.5
-168.6
130.7
74.6
17.4
-50.8
-137.8
135.1
69.2
23.6
-19.1
-56.1
-89.0
-115.0
-147.1
-171.5
139.2
146.5
129.4
105.2
79.3
52.1
40.3
41.1
-11.1
-13.7
69.1
61.5
2.5
3/12
S12
(dB)
-70.0
-73.7
-73.9
-71.7
-65.0
-68.1
-72.0
-67.2
-58.1
-54.6
-50.3
-47.1
-44.3
-44.9
-43.2
-47.8
-43.1
-43.3
-53.6
-58.0
-50.6
-51.2
-55.6
-50.2
-51.8
-57.4
-43.7
-44.5
-44.3
-42.3
-38.8
-38.5
-37.8
-42.1
-39.3
-42.8
-45.1
-47.6
-46.1
-45.7
PhS12
(°)
-164.3
-15.5
-91.5
160.2
84.9
-99.9
-57.1
-16.3
-43.7
-63.9
-100.1
-128.8
-165.4
168.1
148.1
117.2
127.8
70.2
19.7
172.1
49.8
82.8
69.3
-115.7
-78.2
-133.4
160.7
129.2
138.4
130.8
98.8
74.0
53.6
47.8
45.1
10.2
-13.0
54.2
46.9
24.0
S22
(dB)
-1.0
-1.1
-1.3
-1.4
-1.6
-2.0
-2.9
-4.5
-7.7
-13.9
-39.3
-19.0
-17.5
-25.8
-18.4
-13.5
-11.6
-13.1
-5.9
-4.4
-3.8
-3.6
-3.7
-3.6
-3.4
-3.4
-3.6
-3.7
-3.5
-3.3
-3.4
-3.4
-3.6
-3.4
-3.0
-2.8
-2.6
-2.5
-2.5
-2.3
PhS22
(°)
153.4
126.2
96.7
63.1
24.4
-18.9
-64.3
-108.8
-152.3
164.3
118.5
-78.8
-125.0
-101.1
-52.0
-68.1
-91.6
-54.4
-73.2
-94.9
-111.2
-122.6
-131.3
-138.3
-145.2
-152.8
-158.9
-162.4
-166.8
-172.0
-176.7
177.7
174.3
171.1
165.0
158.7
151.0
142.1
132.5
119.4
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Typical test fixture Measurements
Tamb.= +25°C, Vd = +5.0V, Id = 360mA
Linear Gain & Return Loss versus frequency
30
25
Gain and retun losses (dB)
20
S21
15
S11
10
S22
5
0
-5
-10
-15
-20
-25
6
8
10
12
14
16
18
20
Frequency (GHz)
Linear Gain versus frequency & temperature
30
25
Gain (dB)
20
-40°C
15
+25°C
+85°C
10
5
0
8
10
12
14
16
18
20
Frequency (GHz)
Ref. : DSCHA52666274 - 30 Sep 16
4/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Typical test fixture Measurements
Vd = +5.0V, Id = 360mA
Output Power at 1dB compression versus frequency & temperature
30
29
28
27
Pout
26
25
24
-40 C
23
+25 C
+85 C
22
21
20
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Noise Figure versus frequency & temperature
10
9
-40°C
+25°C
8
+85°C
NF (dB)
7
6
5
4
3
2
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Ref. : DSCHA52666274 - 30 Sep 16
5/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Typical test fixture Measurements
Tamb.= +25°C, Vd = +5.0V, Id = 360mA
Output IP3 versus output power & frequency
40
38
OIP3 (dBm)
36
34
32
30
28
26
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
17 GHz
18 GHz
24
22
20
-2
0
2
4
6
8
10
12
14
16
18
20
22
Pout DCL (dBm)
C/I3 versus Pout DCL & frequency
85
80
9 GHz
75
10 GHz
11 GHz
C/I3 (dBc)
70
12 GHz
65
13 GHz
14 GHz
60
15 GHz
16 GHz
55
17 GHz
50
18 GHz
45
40
35
30
-2
0
2
4
6
8
10
12
14
16
18
20
22
Pout DCL (dBm)
Ref. : DSCHA52666274 - 30 Sep 16
6/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Typical Board Measurements
Vd = +5.0V, Id = 360mA
OIP3 (dBm)
Output IP3 versus frequency & temperature @ Pin = -18 dBm
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
-40°C
+25°C
+85°C
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Ref. : DSCHA52666274 - 30 Sep 16
7/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Mechanical data
All dimensions are in micrometers
Chip size
= 1810x1370 ±35µm
Chip thickness
= 100µm ±10µm
RF pads
= 110 x 72µm²
DC pads
= 100 x 100µm²
Chip width and length are given with a tolerance of ±35µm
Ref. : DSCHA52666274 - 30 Sep 16
8/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Recommended assembly plan
Vg
Vd
Vd
Vd
Vg
Vg
C1=120pF
C2=10nF
Note:
Supply feed should be bypassed.
25µm wedge bonding is preferred.
Recommended circuit bonding table
Label
IN, OUT
Type
RF
Decoupling
Not required
VD1, VD2, VD3
VG1, VG2, VG3
Vd
Vg
120pF & 10nF
120pF & 10nF
Ref. : DSCHA52666274 - 30 Sep 16
Comment
Inductance (Lbonding) = 0.3nH
400µm length with a wire diameter of 25 µm
Drain Supply
Gate Supply
9/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
DC Schematic
5V, 360mA
Vd= 5V
50mA
105mA
205 mA
Stage 3
Stage 2
Stage 1
Stage 3
500
520 
540
Vg# -0.3V
Ref. : DSCHA52666274 - 30 Sep 16
10/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Notes
Ref. : DSCHA52666274 - 30 Sep 16
11/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHA5266-99F
10-16 GHz Medium Power Amplifier
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Ordering Information
Chip form:
CHA5266-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA52666274 - 30 Sep 16
12/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
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