CHA5266-99F 10-16 GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. VD2 VD1 VD3 RF OUT RF IN VG2 VG1 Main Features 30 ■ Broadband performances: 10-16GHz. ■ 23dB Linear Gain. ■ 26.5dBm output power @ 1dB comp. ■ 36dBm OIP3. ■ DC bias: Vd=5.0Volt@Id=360mA. ■ Chip size 1.81x1.37x0.1mm. 20 VG3 Gain and retun losses (dB) 25 S21 15 S11 10 S22 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output IP3 Pout Output Power @1dB comp. Ref. : DSCHA52666274 - 30 Sep 16 Min 10 Typ Max 16 23 36 26.5 1/12 Unit GHz dB dBm dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +5.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 10 16 GHz Gain Linear Gain 23 dB RL_in Input Return Loss 12 dB RL_out Output Return Loss 15 dB P1dB Output power @ 1dB compression 26.5 dBm Psat Saturated output power 27.5 dBm OIP3 Output IP3 36 dBm NF Noise Figure 5.5 dB Idq Quiescent Drain current 360 mA Vg Gate Voltage -0.35 V These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. A bonding wire of typically 0.3nH will improve the matching at the accesses. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 7V V Idq Drain bias current 0.45 A Vg Gate bias voltage -2 to 0 V Pin Input continuous power 20 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25°C Symbol Pad Ref. Vd VD1 Vd VD2 Vd VD3 Vg VG1 Vg VG2 Vg VG3 Ref. : DSCHA52666274 - 30 Sep 16 Parameter DC Drain voltage 1st stage DC Drain voltage 2nd stage DC Drain voltage 3rd stage DC Gate voltage 1st stage DC Gate voltage 2nd stage DC Gate voltage 3rd stage 2/12 Values 5 5 5 -0.35 -0.35 -0.35 Unit V V V V V V Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Typical on wafer Sij parameters Tamb.= +25°C, Vd = +5.0V, Id = 360mA Freq S11 PhS11 S21 (GHz) (dB) (°) (dB) 1.0 -0.9 151.4 -59.0 2.0 -1.0 123.9 -49.2 3.0 -1.1 97.2 -53.2 4.0 -1.2 71.4 -45.6 5.0 -1.5 45.9 -25.9 6.0 -1.8 20.0 -6.9 7.0 -2.6 -7.7 7.3 8.0 -4.5 -35.4 17.7 9.0 -7.4 -51.2 24.6 10.0 -8.8 -60.8 26.3 11.0 -9.6 -80.1 25.4 12.0 -10.7 -99.7 24.4 13.0 -12.8 -139.9 23.6 14.0 -21.4 -175.2 22.1 15.0 -24.0 -53.1 20.7 16.0 -13.0 -103.2 20.7 17.0 -9.8 -140.8 20.7 18.0 -7.1 -178.0 19.0 19.0 -4.8 150.4 12.6 20.0 -3.3 118.6 3.8 21.0 -2.4 92.7 -4.7 22.0 -1.9 71.4 -12.3 23.0 -1.4 52.8 -20.4 24.0 -1.1 36.2 -28.1 25.0 -1.0 21.6 -35.8 26.0 -1.0 8.4 -39.8 27.0 -1.0 -3.3 -41.7 28.0 -1.0 -13.8 -43.3 29.0 -1.2 -23.7 -43.1 30.0 -1.3 -32.4 -38.8 31.0 -1.5 -40.0 -38.3 32.0 -1.6 -46.8 -38.3 33.0 -1.6 -52.6 -37.9 34.0 -1.3 -59.8 -40.6 35.0 -1.6 -68.1 -39.2 36.0 -1.9 -72.8 -42.6 37.0 -1.6 -76.8 -50.9 38.0 -1.3 -84.4 -60.5 39.0 -1.8 -92.7 -45.0 40.0 -2.0 -97.8 -49.0 Ref. : DSCHA52666274 - 30 Sep 16 PhS21 (°) 96.0 -63.4 -16.8 40.0 94.5 46.4 -25.3 -113.2 145.8 45.3 -35.8 -102.5 -168.6 130.7 74.6 17.4 -50.8 -137.8 135.1 69.2 23.6 -19.1 -56.1 -89.0 -115.0 -147.1 -171.5 139.2 146.5 129.4 105.2 79.3 52.1 40.3 41.1 -11.1 -13.7 69.1 61.5 2.5 3/12 S12 (dB) -70.0 -73.7 -73.9 -71.7 -65.0 -68.1 -72.0 -67.2 -58.1 -54.6 -50.3 -47.1 -44.3 -44.9 -43.2 -47.8 -43.1 -43.3 -53.6 -58.0 -50.6 -51.2 -55.6 -50.2 -51.8 -57.4 -43.7 -44.5 -44.3 -42.3 -38.8 -38.5 -37.8 -42.1 -39.3 -42.8 -45.1 -47.6 -46.1 -45.7 PhS12 (°) -164.3 -15.5 -91.5 160.2 84.9 -99.9 -57.1 -16.3 -43.7 -63.9 -100.1 -128.8 -165.4 168.1 148.1 117.2 127.8 70.2 19.7 172.1 49.8 82.8 69.3 -115.7 -78.2 -133.4 160.7 129.2 138.4 130.8 98.8 74.0 53.6 47.8 45.1 10.2 -13.0 54.2 46.9 24.0 S22 (dB) -1.0 -1.1 -1.3 -1.4 -1.6 -2.0 -2.9 -4.5 -7.7 -13.9 -39.3 -19.0 -17.5 -25.8 -18.4 -13.5 -11.6 -13.1 -5.9 -4.4 -3.8 -3.6 -3.7 -3.6 -3.4 -3.4 -3.6 -3.7 -3.5 -3.3 -3.4 -3.4 -3.6 -3.4 -3.0 -2.8 -2.6 -2.5 -2.5 -2.3 PhS22 (°) 153.4 126.2 96.7 63.1 24.4 -18.9 -64.3 -108.8 -152.3 164.3 118.5 -78.8 -125.0 -101.1 -52.0 -68.1 -91.6 -54.4 -73.2 -94.9 -111.2 -122.6 -131.3 -138.3 -145.2 -152.8 -158.9 -162.4 -166.8 -172.0 -176.7 177.7 174.3 171.1 165.0 158.7 151.0 142.1 132.5 119.4 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Typical test fixture Measurements Tamb.= +25°C, Vd = +5.0V, Id = 360mA Linear Gain & Return Loss versus frequency 30 25 Gain and retun losses (dB) 20 S21 15 S11 10 S22 5 0 -5 -10 -15 -20 -25 6 8 10 12 14 16 18 20 Frequency (GHz) Linear Gain versus frequency & temperature 30 25 Gain (dB) 20 -40°C 15 +25°C +85°C 10 5 0 8 10 12 14 16 18 20 Frequency (GHz) Ref. : DSCHA52666274 - 30 Sep 16 4/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Typical test fixture Measurements Vd = +5.0V, Id = 360mA Output Power at 1dB compression versus frequency & temperature 30 29 28 27 Pout 26 25 24 -40 C 23 +25 C +85 C 22 21 20 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Noise Figure versus frequency & temperature 10 9 -40°C +25°C 8 +85°C NF (dB) 7 6 5 4 3 2 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Ref. : DSCHA52666274 - 30 Sep 16 5/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Typical test fixture Measurements Tamb.= +25°C, Vd = +5.0V, Id = 360mA Output IP3 versus output power & frequency 40 38 OIP3 (dBm) 36 34 32 30 28 26 9 GHz 10 GHz 11 GHz 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 17 GHz 18 GHz 24 22 20 -2 0 2 4 6 8 10 12 14 16 18 20 22 Pout DCL (dBm) C/I3 versus Pout DCL & frequency 85 80 9 GHz 75 10 GHz 11 GHz C/I3 (dBc) 70 12 GHz 65 13 GHz 14 GHz 60 15 GHz 16 GHz 55 17 GHz 50 18 GHz 45 40 35 30 -2 0 2 4 6 8 10 12 14 16 18 20 22 Pout DCL (dBm) Ref. : DSCHA52666274 - 30 Sep 16 6/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Typical Board Measurements Vd = +5.0V, Id = 360mA OIP3 (dBm) Output IP3 versus frequency & temperature @ Pin = -18 dBm 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 -40°C +25°C +85°C 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Ref. : DSCHA52666274 - 30 Sep 16 7/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Mechanical data All dimensions are in micrometers Chip size = 1810x1370 ±35µm Chip thickness = 100µm ±10µm RF pads = 110 x 72µm² DC pads = 100 x 100µm² Chip width and length are given with a tolerance of ±35µm Ref. : DSCHA52666274 - 30 Sep 16 8/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Recommended assembly plan Vg Vd Vd Vd Vg Vg C1=120pF C2=10nF Note: Supply feed should be bypassed. 25µm wedge bonding is preferred. Recommended circuit bonding table Label IN, OUT Type RF Decoupling Not required VD1, VD2, VD3 VG1, VG2, VG3 Vd Vg 120pF & 10nF 120pF & 10nF Ref. : DSCHA52666274 - 30 Sep 16 Comment Inductance (Lbonding) = 0.3nH 400µm length with a wire diameter of 25 µm Drain Supply Gate Supply 9/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier DC Schematic 5V, 360mA Vd= 5V 50mA 105mA 205 mA Stage 3 Stage 2 Stage 1 Stage 3 500 520 540 Vg# -0.3V Ref. : DSCHA52666274 - 30 Sep 16 10/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Notes Ref. : DSCHA52666274 - 30 Sep 16 11/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com CHA5266-99F 10-16 GHz Medium Power Amplifier Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHA5266-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52666274 - 30 Sep 16 12/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com