PD - 96310
IRLML9301TRPbF
VDS
-30
V
VGS Max
± 20
V
RDS(on) max
64
mΩ
103
mΩ
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
HEXFET® Power MOSFET
* '
6 Micro3TM (SOT-23)
IRLML9301TRPbF
Application(s)
• System/Load Switch
Features and Benefits
Benefits
Features
Low RDS(on) ( ≤ 64mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Symbol
VDS
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
⇒
Increased reliability
Parameter
Max.
Units
-30
V
ID @ TA = 25°C
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
-3.6
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
-2.9
IDM
Pulsed Drain Current
-15
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.8
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 20
W/°C
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
A
W
Thermal Resistance
Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
f
Typ.
Max.
–––
100
–––
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
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1
05/27/10
IRLML9301TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Min. Typ. Max. Units
-30
–––
–––
–––
0.02
–––
–––
51
64
V
Conditions
VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
mΩ
VGS = -4.5V, ID
–––
82
103
-1.3
–––
-2.4
–––
–––
1
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
RG
Internal Gate Resistance
–––
12
–––
Ω
gfs
Qg
Forward Transconductance
5.0
–––
–––
S
Total Gate Charge
–––
4.8
–––
Qgs
Gate-to-Source Charge
–––
1.2
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.5
–––
VGS = -4.5V
VDD =-15V
IDSS
IGSS
Drain-to-Source Leakage Current
td(on)
Turn-On Delay Time
–––
9.6
–––
tr
Rise Time
–––
19
–––
td(off)
Turn-Off Delay Time
–––
16
–––
tf
Fall Time
–––
15
–––
Ciss
Input Capacitance
–––
388
–––
Coss
Output Capacitance
–––
93
–––
Crss
Reverse Transfer Capacitance
–––
65
–––
V
µA
nA
d
= -2.9A d
VGS = -10V, ID = -3.6A
VDS = VGS, ID = -10µA
VDS =-24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VDS = -10V, ID =-3.6A
ID = -3.6A
nC
ns
VDS =-15V
d
d
ID = -1A
RG = 6.8Ω
VGS = -4.5V
VGS = 0V
pF
VDS = -25V
ƒ = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
c
Min. Typ. Max. Units
–––
–––
-1.3
A
–––
-15
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
-1.2
V
trr
Reverse Recovery Time
–––
14
21
ns
Qrr
Reverse Recovery Charge
–––
7.2
11
nC
2
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
d
TJ = 25°C, VR = -24V, IF=-1.3A
di/dt = 100A/µs
d
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IRLML9301TRPbF
100
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
1
0.1
-2.5V
10
BOTTOM
1
-2.5V
≤60µs PULSE WIDTH Tj = 150°C
≤60µs PULSE WIDTH Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
ID, Drain-to-Source Current (A)
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
VDS = -15V
≤60µs PULSE WIDTH
10
T J = 150°C
T J = 25°C
1
ID = -3.6A
VGS = -10V
1.4
1.1
0.8
0.6
0.1
2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLML9301TRPbF
VGS = 0V,
f = 1 KHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
1000
Ciss
Coss
Crss
100
14
ID= -3.6A
12
VGS, Gate-to-Source Voltage (V)
10000
VDS= -24V
VDS= -15V
10
VDS= -6V
8
6
4
2
10
0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
6
8
10
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
ID, Drain-to-Source Current (A)
100
ISD, Reverse Drain Current (A)
4
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
T J = 150°C
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
10msec
0.1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.01
0.3
0.5
0.7
0.9
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
1.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML9301TRPbF
4.2
RD
V DS
ID, Drain Current (A)
3.6
VGS
D.U.T.
RG
3
2.4
+
- VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.8
1.2
Fig 10a. Switching Time Test Circuit
0.6
VDS
90%
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
1000
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
180
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRLML9301TRPbF
ID = -3.6A
140
100
T J = 125°C
60
T J = 25°C
20
2
4
6
8
10
12
14
16
18
20
500
400
300
200
Vgs = -4.5V
Vgs = -10V
100
0
0
5
10
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate
Voltage
15
20
25
30
35
ID, Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
50KΩ
12V
.2µF
.3µF
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRLML9301TRPbF
100
80
2.0
Power (W)
VGS(th) , Gate threshold Voltage (V)
2.5
1.5
ID = 10uA
ID = 25uA
ID = 250uA
1.0
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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40
20
0.5
-75 -50 -25
60
0
1E-005 0.0001 0.001
0.01
0.1
1
10
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRLML9301TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
6
5
SYMBOL
D
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
3
6
C
E
E1
1
2
0.15 [0.006] M C B A
0.10 [0.004] C
A1
5
B
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
L1
Recommended Footprint
c
L2
0.972
0.950
0.802
3X L
7
1.900
MILLIMETERS
INCHES
MIN
MAX
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MAX
0.0004 %6&
%6&
REF
BSC
0
8
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLML9301TRPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRLML9301TRPbF
Orderable part number
Package Type
IRLML9301TRPbF
Micro3
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Qualification information†
Qualification level
Moisture Sensitivity Level
Cons umer
(per JE DE C JE S D47F
Micro3
RoHS compliant
††
†††
guidelines )
MS L1
†††
(per IPC/JE DE C J-S T D-020D
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2010
10
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