CEP6601/CEB6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G S CEB SERIES TO-263(DD-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CEP SERIES TO-220 Tc = 25 C unless otherwise noted Symbol Limit -60 Units V VGS ±20 V ID -19 A IDM -76 A 50 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 0.33 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 3 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W Rev .2 2010.July. http://www.cetsemi.com Details are subject to change without notice . 1 CEP6601/CEB6601 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -60V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS(th) RDS(on) gFS Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -8A 61 86 mΩ VGS = -4.5V, ID = -6A VDS = -10V, ID = -15A 75 125 10 mΩ S 1135 pF 95 pF 60 pF VDS = -30V, VGS = 0V, f = 1.0 MHz -1 Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω 13 26 ns 4 8 ns 45 90 ns Turn-Off Fall Time tf 6 12 ns Total Gate Charge Qg 22.6 29.4 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -30V, ID = -3.5A, VGS = -10V 2.4 nC 5.7 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -19A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 -19 A -1.5 V CEP6601/CEB6601 25 10 8 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,8,6V 6 -VGS=3V 4 2 0 0 0.3 0.6 0.9 1.2 1.5 1 2 3 4 5 6 Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 500 Coss 250 Crss 5 10 15 20 25 30 2.8 2.4 ID=-8A VGS=-10V 2.0 1.6 1.2 0.8 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0 -55 C Figure 1. Output Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C -VGS, Gate-to-Source Voltage (V) 750 1.2 25 C 5 1.8 1000 1.3 10 -VDS, Drain-to-Source Voltage (V) 1250 0 15 0 1500 0 20 -25 0 25 50 75 100 125 150 10 2 10 1 10 0 10 -1 VGS=0V 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 V =-30V DS ID=-3.5A 10 6 4 2 0 0 2 RDS(ON)Limit 8 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEP6601/CEB6601 5 10 15 10 1ms 1 10ms DC 10 10 20 100µs 0 TC=25 C TJ=175 C Single Pulse -1 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 Single Pulse 10 -2 10 -5 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 2