UniFETTM
FDB52N20
200V N-Channel MOSFET
Features
Description
• 52A, 200V, RDS(on) = 0.049Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 49 nC)
• Low Crss ( typical 66 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
{
z
G{
G
z
z
{
S
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
FDB52N20
Unit
200
V
52
33
A
A
(Note 1)
208
A
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
2520
mJ
IAR
Avalanche Current
(Note 1)
52
A
35.7
mJ
4.5
V/ns
357
2.86
W
W/°C
-55 to +150
°C
300
°C
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
RθJC
Thermal Resistance, Junction-to-Case
--
0.35
°C/W
RθJA*
Thermal Resistance, Junction-to-Ambient*
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor Corporation
FDB52N20 Rev. A
1
www.fairchildsemi.com
FDB52N20 200V N-Channel MOSFET
July 2008
Device Marking
FDB52N20
Device
Reel Size
Tape Width
Quantity
330mm
24mm
800
2
FDB52N20TM
Electrical Characteristics
Symbol
Package
D -PAK
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
200
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.2
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 200V, VGS = 0V
VDS = 160V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.041
0.049
Ω
--
35
--
S
--
2230
2900
pF
--
540
700
pF
--
66
100
pF
--
53
115
ns
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 26A
gFS
Forward Transconductance
VDS = 40V, ID = 26A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100V, ID = 52A
RG = 25Ω
(Note 4, 5)
VDS = 160V, ID = 52A
VGS = 10V
(Note 4, 5)
--
175
359
ns
--
48
107
ns
--
29
68
ns
--
49
63
nC
--
19
--
nC
--
24
--
nC
--
--
52
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
204
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 52A
--
--
1.4
V
trr
Reverse Recovery Time
162
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 52A
dIF/dt =100A/µs
--
Qrr
--
1.3
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.4mH, IAS = 52A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 52A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FDB52N20 Rev. A
www.fairchildsemi.com
FDB52N20 200V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
1
10
2
10
ID, Drain Current [A]
2
10
ID, Drain Current [A]
Figure 2. Transfer Characteristics
0
10
150°C
1
25°C
10
-55°C
* Notes :
1. VDS = 40V
2. 250µs Pulse Test
* Notes :
1. 250µs Pulse Test
2. TC = 25°C
-1
10
0
-1
0
10
10
1
10
10
2
4
6
VDS, Drain-Source Voltage [V]
8
10
12
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.12
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
2
10
0.10
0.08
VGS = 10V
0.06
0.04
VGS = 20V
0.02
* Note : TJ = 25°C
0.00
℃
1
10
150
℃
25
* Notes :
1. VGS = 0V
2. 250µs Pulse Test
0
0
25
50
75
100
125
10
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Capacitances [pF]
4000
3000
VGS, Gate-Source Voltage [V]
Crss = Cgd
5000
Coss
Ciss
2000
* Note ;
1. VGS = 0 V
1000
Crss
2. f = 1 MHz
VDS = 40V
10
VDS = 100V
VDS = 160V
8
6
4
2
* Note : ID = 52A
0
-1
10
10
0
10
0
1
0
VDS, Drain-Source Voltage [V]
20
30
40
50
60
QG, Total Gate Charge [nC]
3
FDB52N20 Rev. A
10
www.fairchildsemi.com
FDB52N20 200V N-Channel MOSFET
Typical Performance Characteristics
FDB52N20 200V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 26 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
50
100
150
200
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
3
10
60
10 µs
2
1
10
ID, Drain Current [A]
ID, Drain Current [A]
50
100 µs
1 ms
10 ms
100 ms
DC
10
Operation in This Area
is Limited by R DS(on)
0
10
* Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
-2
0
10
1
20
0
25
2
10
30
10
3. Single Pulse
10
40
10
50
75
100
125
150
TC, Case Temperature [°C]
VDS, Drain-Source Voltage [V]
ZθJC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
-1
0 .2
0 .1
* N o te s :
1 . Z θ J C (t) = 0 .3 5 ° C /W M a x .
0 .0 5
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 2
10
3 . T J M - T C = P D M * Z θ J C (t)
-2
0 .0 1
PDM
s in g le p u ls e
t1
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
4
FDB52N20 Rev. A
www.fairchildsemi.com
FDB52N20 200V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
tp
5
FDB52N20 Rev. A
VDS (t)
VDD
DUT
10V
ID (t)
Time
www.fairchildsemi.com
FDB52N20 200V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
6
FDB52N20 Rev. A
www.fairchildsemi.com
FDB52N20 200V N-Channel MOSFET
Mechanical Dimensions
D2-PAK
7
FDB52N20 Rev. A
www.fairchildsemi.com
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Product Status
Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I35
FDB52N20 Rev. A
8
www.fairchildsemi.com
FDB52N20 200V N-Channel MOSFET
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