PD - 97543
AUIRFZ44Z
AUIRFZ44ZS
AUTOMOTIVE GRADE
Features
●
●
●
●
●
●
●
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
D
55V
RDS(on) max.
G
ID
S
Description
51A
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other applications.
13.9mΩ
D
G
D
S
G
S
D2Pak
AUIRFZ44ZS
TO-220AB
AUIRFZ44Z
G
Gate
D
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise
specified.
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Parameter
51
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (See Fig. 9)
36
IDM
Pulsed Drain Current
200
PD @TC = 25°C
Maximum Power Dissipation
c
Linear Derating Factor
VGS
EAS
Gate-to-Source Voltage
EAS (tested)
Single Pulse Avalanche Energy Tested Value
Single Pulse Avalanche Energy (Thermally Limited)
c
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
i
d
h
80
W
0.53
± 20
W/°C
V
86
mJ
105
See Fig.12a,12b,15,16
A
mJ
-55 to + 175
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
°C
300
10 lbf•in (1.1N•m)
Thermal Resistance
k
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
RθJA
j
Junction-to-Ambient (PCB Mount, steady state)
Typ.
Max.
Units
–––
1.87
°C/W
0.50
–––
–––
62
–––
40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/23/2010
AUIRFZ44Z/ZS
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
Units
55
–––
–––
2.0
22
–––
–––
–––
–––
–––
0.054
11.1
–––
–––
–––
–––
–––
–––
–––
–––
13.9
4.0
–––
20
250
200
-200
V
V/°C
mΩ
V
S
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 31A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 31A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
29
7.2
12
14
68
33
41
4.5
Max.
43
11
18
–––
–––
–––
–––
–––
Units
nC
ns
nH
Conditions
ID = 31A
VDS = 44V
VGS = 10V
VDD = 28V
ID = 31A
RG = 15Ω
VGS = 10V
Between lead,
f
f
D
6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1420
240
130
830
190
300
–––
–––
–––
–––
–––
–––
pF
Units
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Min.
Typ.
Max.
IS
Continuous Source Current
Parameter
–––
–––
51
ISM
(Body Diode)
Pulsed Source Current
–––
–––
200
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L =0.18mH,
RG = 25Ω, IAS = 31A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 31A, di/dt ≤ 840A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
–––
–––
–––
–––
23
17
A
V
ns
nC
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 31A, VGS = 0V
TJ = 25°C, IF = 31A, VDD = 28V
di/dt = 100A/µs
f
f
S
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
1.2
35
26
Conditions
MOSFET symbol
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population, starting
TJ = 25°C, L =0.18mH, RG = 25Ω, IAS = 31A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is rated at TJ of approximately 90°C.
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AUIRFZ44Z/ZS
Qualification Information†
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
TO-220AB
N/A
TO-262
N/A
2
D Pak
Machine Model
MSL1
Class M2 (200V)
AEC-Q101-002
ESD
Human Body Model
Class H1A (500V)
AEC-Q101-001
Charged Device Model
Class C5 (1125V)
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFZ44Z/ZS
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
BOTTOM
0.1
4.5V
10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
Tj = 175°C
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
1000
100
TJ = 175°C
T J = 25°C
10
VDS = 15V
≤60µs PULSE WIDTH
1.0
2
4
6
8
10
12
50
T J = 25°C
40
30
T J = 175°C
20
10
V DS = 10V
0
0
10
20
30
40
50
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Typical Forward Transconductance
vs. Drain Current
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AUIRFZ44Z/ZS
10000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 31A
C, Capacitance(pF)
C oss = C ds + C gd
Ciss
1000
Coss
Crss
100
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
0
5
VDS, Drain-to-Source Voltage (V)
10
15
20
25
30
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
VDS= 44V
VDS= 28V
VDS= 11V
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 175°C
10
T J = 25°C
1
0.10
VGS = 0V
0.01
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.0
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFZ44Z/ZS
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
55
50
40
35
30
25
20
15
10
5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
-60 -40 -20 0
175
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
10
Thermal Response ( Z thJC )
ID, Drain Current (A)
45
ID = 31A
VGS = 10V
1
D = 0.50
0.20
0.10
0.05
0.1
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ2
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.8487 0.00044
0.6254
0.3974
0.00221
0.01173
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFZ44Z/ZS
D.U.T
RG
20V
VGS
DRIVER
L
VDS
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
400
15V
ID
3.8A
5.5A
BOTTOM 31A
350
TOP
300
250
200
150
100
50
0
tp
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
VCC
1K
VGS(th) Gate threshold Voltage (V)
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRFZ44Z/ZS
100
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.01
10
0.05
0.10
1
0.1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
100
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 31A
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFZ44Z/ZS
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
+
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
VGS
RG
RD
D.U.T.
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRFZ44Z/ZS
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFZ44Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFZ44Z/ZS
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRFZ44ZS
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRFZ44Z/ZS
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRFZ44Z/ZS
Ordering Information
Base part
Package Type
AUIRFZ44Z
AUIRFZ44ZS
TO-220
D2Pak
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Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRFZ44Z
AUIRFZ44ZS
AUIRFZ44ZSTRL
AUIRFZ44ZSTRR
13
AUIRFZ44Z/ZS
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
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service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
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responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
14
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